Growth of GaNAlN and AlGaN by MOCVD using TRIETHYLGALLIUM (cas 1115-99-7) and tritertiarybutylaluminium

Add time:08/22/2019    Source:sciencedirect.com

Films of aluminium nitride (AIN) with thicknesses in the range from 200 to 3600 Å have been deposited at 1050°C by low-pressure MOCVD. Using an alternative precursor, tritertiarybutylaluminium (tBu3Al), and ammonia (NH3), we have grown AlN on sapphire (c-Al2O3). At a growth rate of 0.35 μm/h, the FWHM of the rocking curve measured by X-ray diffraction was 150 arcsec. Therefore, we used the thin AlN films as buffer layers for the deposition of gallium nitride (GaN) at 950°C using TRIETHYLGALLIUM (cas 1115-99-7) (Et3Ga). Aluminium gallium nitride (AlxGa1−xN) with aluminium contents x from 0 to 0.5 were grown using a mixture of Et3Ga and tBu3Al. The strctural and optical properties of GaN, AlGaN and AlN were verified by X-ray diffraction (XRD), spectrally resolved photoconductivity (SPC), photothermal deflection (PDS) and photoluminescence spectroscopies.

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