Fabrication of Ta3N5ZnO direct Z-scheme photocatalyst for hydrogen generation

Add time:08/13/2019    Source:sciencedirect.com

Based on the Z-scheme mechanism, the combination of two semiconductors with suitable bandgaps can reduce the recombination rate of electrons and holes in a single material to enhance photocatalytic hydrogen evolution. Ta3N5 with suitable band gap positions is a potentially promising material for photocatalysis. In order to raise the hydrogen production rate, ZnO nanocrystals were deposited by atomic layer deposition (ALD) on Ta3N5 to form a direct Z-scheme structure, [email protected]3N5. The ALD cycle number varied from 200 to 500. All of the direct Z-scheme samples exhibited much higher hydrogen evolution efficiencies than Ta3N5, ZnO, and the indirect Z-scheme, with the order of [email protected]3N5>[email protected]3N5>[email protected]3N5>[email protected]3N5. Because of the uniform distribution, discrete particles, and proper size of ZnO, [email protected]3N5 showed the highest hydrogen evolution rate, being about 500 μmol/g-h. With 400 or 500 ALD cycles, the larger particles of ZnO would overlap with each other to form a continuous layer on Ta3N5, thus reducing the exposure of Ta3N5 to the light and water for producing hydrogen.

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