Capacitance response characteristics of hydrogen sensor with tantalum oxide dielectric layer

Add time:08/15/2019    Source:sciencedirect.com

Sensors with silicon substrates are limited in their application at higher temperatures than 250 °C due to the small band gap energy in silicon. In this study, a hydrogen gas sensor with metal-oxide-semiconductor (MOS) structure capable of operating at high temperatures above 300 °C is investigated. The sensor consists of a tantalum oxide layer on a SiC substrate with the large band gap energy for effectively detecting hydrogen gas. The tantalum oxide is formed by rapidly oxidizing the deposited Ta at 900 °C. To estimate response characteristics of the sensor, variations in capacitance and current-voltage characteristics after exposure to different hydrogen concentrations up to 2000 ppm were examined at temperatures ranging from room temperature to 600 °C.

We also recommend Trading Suppliers and Manufacturers of Tantalum(V) oxide (cas 1314-61-0). Pls Click Website Link as below: cas 1314-61-0 suppliers

Prev:Synthesis and electrical properties of antimony–doped tin oxide–coated TiO2 by polymeric precursor method
Next:High temperature oxidation behaviour of V-Ti-Ta alloys)