Formation, optical and electrical properties of a new semiconductor phase of Calcium silicide (cas 12737-18-7) on Si(111)

Add time:08/23/2019    Source:sciencedirect.com

The electronic structure and morphology of Calcium silicide (cas 12737-18-7) films formed by reactive deposition epitaxy at 130 oC on Mg2Si film and at 500 oC on Si(111)7x7 surface, their optical and electrical properties have been investigated. Formation of new calcium silicide phase with high Si concentration, indirect band gap (0.63 eV), high conductivity at low temperatures (50-450 K) has been obtained after calcium deposition at 500 oC on Si(111)7x7 surface.

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