Full length articleTweaking the properties of Aluminum oxide (cas 1344-28-1) shielded graphene-based transistors
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Add time:09/03/2019 Source:sciencedirect.com
A thin dielectric layer plays a significant role to extend the electronic and optical properties of graphene-based field effect transistors. This study investigates the interaction between graphene and Aluminum oxide (cas 1344-28-1) layer (Al2O3) and the influence of Al2O3 on the properties of graphene. The electrical characterization demonstrates the tunability in the resistivity of Al2O3/Gr devices by applying Vg. Al2O3 deposition introduced n-doping in graphene and is affirmed by shifting of charge neutrality point towards negative Vg. The selective coverage of channel, results in the formation of p-n junction within graphene FET which becomes more pronounced upon DUV treatment. Moreover, the study validates the modulation in interface properties of pristine GFET and Al2O3/Gr at different Vg and temperatures. An enhancement in the intervalley and phase coherence scattering rates is observed for Al2O3/Gr device. Therefore, the effect of dielectric layer on graphene based field effect transistors would be of great interest to tune the properties the device.
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