617-85-6Relevant articles and documents
Metalorganic chemical vapor deposition of antimony oxide films on semiconductor substrates
Mittov,Ponomareva,Mittova
, p. 576 - 581 (2002)
The growth kinetics of oxide films on silicon and gallium arsenide substrates were studied, using alkyl and alkoxide metalorganic precursors (triethylantimony, tripropylantimony, antimony butoxide, and antimony tri-β-aminoethoxide). The effect of thermal annealing on the microstructure and properties of the films was examined. Analysis of the deposition kinetics, composition, and properties of the films demonstrates that metalorganic chemical vapor deposition in an oxidizing atmosphere, using antimony butoxide or triethylantimony as a precursor, enables the growth of insulating layers on Si and GaAs at low temperatures (130-300°C).
Preparation method of high-purity triethyl antimony
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Paragraph 0026; 0027; 0028; 0029; 0030; 0031, (2017/08/27)
The invention provides a preparation method of high-purity triethyl antimony. Under the protection of inert gas, the preparation method of the high-purity triethyl antimony comprises the following steps: S1, adding a monohalogenated ethane solution into a mixture of magnesium chips and an organic solvent to prepare a Grignard reagent; S2, dropwise adding an antimony trichloride solution into the Grignard reagent, and reacting to prepare a triethyl antimony solution; and S3, carrying out atmospheric distillation twice, reduced pressure distillation twice and reduced pressure rectification once on the triethyl antimony solution to obtain the high-purity triethyl antimony with the purity more than 5N. The method for synthesizing triethyl antimony by adopting a Grignard reagent process is carried out under the protection of the inert gas, the yield is high, the purity is high, the operation is safe, and the cost is low.
Syntheses and solid-state structures of Et2SbTeEt and Et2BiTeEt
Heimann, Stefan,Kuczkowski, Andreas,Bl?ser, Dieter,W?lper, Christoph,Haack, Rebekka,Jansen, Georg,Schulz, Stephan
supporting information, p. 4858 - 4864 (2015/03/31)
Diethylstibanyl- and diethylbismuthanyl telluranes Et2MTeEt (M = Sb 1, Bi 2) as well as tBu3Sb (3) were structurally characterized by single-crystal X-ray diffraction. Single crystals of 1-3 were grown by using an IR-laser-assisted t
The assessment of some Sb-Te single-source compounds for MOCVD applications
Dickson, Ron S.,Heazle, Kerryn D.
, p. 189 - 198 (2007/10/02)
The new compounds Et2SbTeEt, Me2SbTeEt, Et2SbTeiPr and Et2AsTeEt have been prepared by reactions of Et4Sb2, Me4Sb2 or Et4As2 with iPr2Te2 or Et2Te2.An alternative route to Et2SbTeEt involved the reaction of Et2SbBr with EtTeLi.The compounds are light sensitive, and some of them cannot be obtained pure because of facile radical decomposition or reverse dissociation to the corresponding R4E2 and R'2Te2.Thermal degradation of Et2SbTeEt in a hydrogen stream under conventional MOCVD condition gives a metal deposit containing Sb and Te in the ratio 1.6:1.The related compound Et2SbTeSbEt2 reacts with H2 at room temperature to give Te metal and presumably HSbEt2. Keywords: Antimony; Arsenic; Tellurium; MOCVD
Antimony sources for MOCVD. The use of Et4Sb2 as a p-type dopant for Hg1-xCdxTe and crystal structure of the adduct n
Dickson, Ron S.,Heazle, Kerryn D.,Pain, Geoff N.,Deacon, Glen B.,West, Bruce O.,et al.
, p. 131 - 139 (2007/10/02)
Tetraethyldistibine, Et4Sb2, a new antimony source for MOCVD is evaluated.It is shown to be a useful and safe dopant feedstock for low temperature growth of p-type Hg1-xCdxTe.Attempted purification of Et4Sb2 by adduct formation with CdI2 resulted in isolation of a polymeric chain adduct n (1).The structure of 1 has been determined by X-ray crystallography and consists of chains of iodide-bridged Et4Sb2 * 2CdI2 units which have CdI2 bonded to each antimony atom.Antimony and two iodine atoms form a trigonal planar arrangement around cadmium, and two weak axial bonds to the iodine atoms of adjacent units give distorted trigonal bipyramidal coordination to cadmium.The distibine molecules display a skew configuration of the ethyl substituents.The SbII-SbII and SbII-CdII distances are 2.784(2) and 2.822(2) Angstroem respectively.Dropwise addition of Me2Cd to Et4Sb2 in the absence of solvent gave an insoluble 1:1 adduct.Et4Sb2 reacts with Te but not with Cd or Hg.
Preparation of Dichalcogenostibanes of the Type RSb(ER')2 (R = CH3, C2H5; E = S, Se; R' = CH3, C6H5)
Breunig, Hans Joachim,Guelec, Sabahittin
, p. 998 - 1002 (2007/10/02)
Dichalcogenostibanes of the type RSb(ER')2 (R = CH3, C2H5; E = S, Se; R' = CH3, C6H5) and trialkylstibanes R3Sb have been prepared by redistribution reactions of stibanes of the type R2SbER'. - Keywords: Alkyldi(organochalcogeno)stibanes, Redistribution Reactions of Dialkyl(organochalcogeno)stibanes, 1H NMR Spectra, Raman Spectra, Mass Spectra
Preparation of Chalcogenostibanes of the Type R2SbER' (R = CH3, C2H5; E = S, Se, Te; R' = CH3, C6H5) by Exchange Reactions of Distibanes and Dichalcogenides
Breunig, Hans Joachim,Guelec, Sabahittin
, p. 1387 - 1390 (2007/10/02)
Chalcogenostibanes of the type R2SbER' (R = CH3, C2H5; E = S, Se, Te; R' = CH3, C2H5) have been prepared by complete exchange reactions of the corresponding distibanes and dichalcogenides.The derivatives (CH3)2SbTeCH3 and (C2H5)2SbTeCH3 are thermochromic. - Keywords: Dialkyl(organochalcogeno)stibanes, Exchange Reactions of Distibanes and Disulfides, Diselenides or Ditellurides, 1H NMR Spectra, MS Spectra
Selective formation of ethanol from methanol, hydrogen and carbon monoxide
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, (2008/06/13)
A process for the selective formation of ethanol which comprises contacting methanol, hydrogen and carbon monoxide with a catalyst system comprising cobalt acetylacetonate, a tertiary organo Group V A compound of the periodic Table, a first promoter comprising an iodine compound and a second promoter comprising a ruthenium compound.
