4270-70-6

Basic information

• Product Name: Triphenylsulfonium chloride
• Synonyms: ’triphenylsulfoniumchloride’solution;Sulfonium,triphenyl-,chloride;triphenyl-sulfoniuchloride;triphenylsulfurchloride;TRIPHENYLSULFONIUM CHLORIDE;triphenylsulphonium chloride;triphenylsulfonium ion;Triphenylsulfoniumchlorid
• CAS NO: 4270-70-6
• Molecular Formula: C₁₈H₁₅S*Cl
• Molecular Weight: 298.83
• EINECS: 224-259-6
• Mol File: 4270-70-6.mol

Chemical Properties

• Melting Point: 277 °C
• Appearance: /
• Storage Temp.: under inert gas (nitrogen or Argon) at 2-8°C
• Water Solubility: Soluble in water.
• CAS DataBase Reference: Triphenylsulfonium chloride(CAS DataBase Reference)
• NIST Chemistry Reference: Triphenylsulfonium chloride(4270-70-6)
• EPA Substance Registry System: Triphenylsulfonium chloride(4270-70-6)

Safety Data

• Hazard Codes: Xi
• Statements: 36/37/38
• Safety Statements: 26
• WGK Germany: 3
• Hazardous Substances Data: 4270-70-6(Hazardous Substances Data)

Usage

Uses

Used in Electronic Chemicals Industry:
Triphenylsulfonium chloride is used as a key intermediate for the production of new electronic chemicals, such as semiconductors, LCDs (Liquid Crystal Displays), and TFTs (Thin-Film Transistors). Its unique chemical properties make it a valuable component in the development and manufacturing of these advanced electronic materials.
Used in Catalyst Activation:
Triphenylsulfonium chloride is also utilized as a photoacid generator (PAG) in the activation of catalysts through in situ photogeneration of ligands. This application is particularly relevant in the field of chemical synthesis, where it can enhance the efficiency and selectivity of various catalytic processes by generating active ligands upon exposure to light.

Preparation

Triphenylsulfonium Chloride Synthesis: Diphenyl sulfoxide, 40 g (0.2 mole), was dissolved in 400 g of dichloroethane, which was stirred under ice cooling. At a temperature below 20° C., 65 g (0.6 mole) of trimethylsilyl chloride was added dropwise to the solution, which was aged for 30 minutes at the temperature. Then, a Grignard reagent which had been prepared from 14.6 g (0.6 mole) of metallic magnesium, 67.5 g (0.6 mole) of chlorobenzene and 168 g of tetrahydrofuran (THF) was added dropwise at a temperature below 20° C. The reaction solution was aged for one hour, after which 50 g of water at a temperature below 20° C. was added to quench the reaction. To this solution, 150 g of water, 10 g of 12N hydrochloric acid, and 200 g of diethyl ether were further added.The water layer was separated and washed with 100 g of diethyl ether, yielding an aqueous solution of triphenylsulfonium chloride. The compound in aqueous solution form was used in the subsequent reaction without further isolation.

InChI:InChI=1/C18H15Cl.H2S/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18;/h1-15H;1H2/p+1

Upstream product

• 945-51-7 1,1'-sulfinylbisbenzene 
• 71-43-2 benzene 
• 100-42-5 styrene 
• 191402-10-5 triphenyl-λ⁶-sulfanenitrile 
• 100-58-3 phenylmagnesium bromide 
• 108-90-7 chlorobenzene 
• 104-15-4 toluene-4-sulfonic acid 
• 98-89-5 Cyclohexanecarboxylic acid 
• 100-59-4 phenylmagnesium chloride 
• 513-81-5 2,3-dimethyl-buta-1,3-diene 
• 766-90-5 cis-1-phenyl-1-propylene 
• 955-83-9 2,5-diphenylfuran 
• 873-66-5 1-propenylbenzene 

Downstream Products

• 1046151-45-4 C₂₁H₂₈NO₄PS₂ 
• 1046151-46-5 C₂₁H₂₈NO₅PS₂ 
• 937250-56-1 triphenylsulfonium 4-(4-vinyl-benzyloxy)-2,3,5,6-tetrafluorobenzenesulfonate 
• 1120325-84-9 C₁₁H₈F₃O₅S^(1-)*C₁₈H₁₅S⁽¹⁺⁾ 
• 960011-95-4 C₁₁H₈F₃O₅S^(1-)*C₁₈H₁₅S⁽¹⁺⁾ 
• 1240248-58-1 triphenylsulfonium 2-(adamantane-1-carbonyloxy)-3,3,3-trifluoro-2-trifluoromethylpropane-1-sulfonate 

Relevant articles and documents

Synthesis of silicate zeolite analogues using organic sulfonium compounds as structure-directing agents

A microporous crystalline silica zeolite of the MEL structure type and three other zeolite analogues composed of germanosilicate frameworks were synthesized using tributylsulfonium, triphenylsulfonium, or tri(para-tolyl)sulfonium as the structure-directing agent. The germanosilicates thus obtained had ISV, ITT, or a new zeolite structure depending on the synthesis conditions. The structure of the new germanosilicate was solved using X-ray powder diffraction data with the aid of a charge-flipping method. The solution indicated a crystal structure belonging to the P63/mmc space group with cell parameters of a=16.2003 ? and c=21.8579 ?. After calcination, the new germanosilicate material exhibited two types of accessible micropores with diameters of 0.61 and 0.78 nm. A zeolite with MEL structure and three other germanosilicate zeolites were synthesized using organic sulfonium compounds as structure-directing agents. Depending on the synthesis conditions, the germanosilicates had ISV, ITT, or a new zeolite structure. The new germanosilicate exhibited two types of accessible micropores with diameters of 0.61 and 0.78 nm after calcination.

Preparation method of photoacid generator for 193 nm immersion lithography

The invention discloses a preparation method for 193 nm immersed photoetching photo-photoacid generator. The preparation method comprises the following steps: in a solvent, the compound II and the compound III are subjected to a salt-forming reaction as shown in the formula I to obtain the compound shown in a formula shown in the specification. The photoresist containing the photoacid generator produced by the present invention has a high resolution. The method has the advantages of high sensitivity and low line width roughness, and has a good application prospect.

Photoacid generator for 193 nm immersion lithography and intermediate thereof

The invention discloses a photoacid generator for 193 nm immersed lithography and an intermediate thereof. The photoacid generator of the present invention is shown in Formula I. The photoresist containing the photoacid generator of the present invention has a high resolution. The method has the advantages of high sensitivity and low line width roughness, and has a good application prospect.

Flexible long-chain multi-onium-salt photoacid generating agent, preparation method thereof and photoresist composition

The invention discloses a flexible long-chain multi-onium-salt photoacid generating agent, a preparation method thereof and a photoresist composition. The flexible long-chain multi-onium-salt photoacid generating agent has a structural general formula (I) or (II) shown in the description, wherein A is one or both of I and S, X is a chain group having a length of 1-20 atoms, na is 2 or 3, R is oneor any of H, Cl, Br, I, and alkyl group or alkoxy group with a carbon atom number of 1-20, and R has a substitution number of 1-5 on a benzene ring. A carbon chain is extended in a photosensitizer molecule to connect a plurality of onium salt structural units, so that a photosensitizer can be better dissolved in a photoresist solution and can be distributed evenly; the multiple onium salts in themolecule help increase the unit acid generating rate; anions with fluorosulfonic acid have sufficient acidity, and may be subjected to chemical amplification reaction with resin; the long-chain structure helps increase the photoacid concentration in a certain zone and control the acid diffusion range to certain degree.

NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME

There is disclosed a sulfonate shown by the following general formula (2). R1—COOC(CF3)2—CH2SO3?M+??(2) (In the formula, R1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M+ represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.

A novel photo-acid generator bound molecular glass resist with a single protecting group

A novel photo-acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. This single component molecular resist was prepared in four steps starting from 9,9-bis(4-hydroxyphenyl)fluorene. The single component molecular resist exhibited good thermal properties, such as a 10% weight loss temperature of 200 °C and a glass transition temperature of 91 °C. This resist showed a good sensitivity of 60 μC/cm2 with e-beam exposure (50 keV). On the other hand, the fine pattern with a half-pitch of 50 nm in the presence of 4 wt % quencher, trioctylamine, was obtained using electron-beam (100 keV) lithography. The LER value was 8.2 nm (3σ, 60 nm half-pitch patterns). 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013 A novel photo-acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. Copyright

PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS

The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.

Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process

There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. [in-line-formulae]RCOO—CH2CF2SO3?H+??(1)[/in-line-formulae] There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.