High Technology Program of China (2006AA03Z318), and
Shanghai Leading Academic Discipline Project (B108).
Notes and references
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Fig. 4 Nondestructive readout capability of 1/LaF3:Yb,Ho-loaded
PMMA film in the open state (&) and in the PSS state (’), lex
980 nm. Inset graph shows the modulated up-conversion luminescence
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=
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As shown in Fig. 4 inset, the up-conversion luminescent
switch had good reversibility with alternating UV (365 nm)
and visible light (4450 nm) irradiation for many cycles. The
reversible changes can be used in a repeated ‘‘write-erase’’
process. To investigate its nondestructive readout capability,
1/LaF3:Yb,Ho-loaded PMMA film was continuously irra-
diated by the 980 nm diode laser. The strong irradiation of
980 nm (800 mw) induced no discernible changes of up-
conversion luminescence both in the ‘‘switch on’’ and ‘‘switch
off’’ state. After irradiation with the 980 nm laser for 48 h, the
increase of up-conversion luminescence was less than 2%
when 1 was in the open form, and the decrease was less than
1% when 1 was in the photostationary state. This is attributed
to the negligible absorbance of 1 at 980 nm in both the open
and PSS states. Thus, the present system affords a good
example of nondestructive readout capability.
In summary, by combination of the organic photochromic
DTE and upconversion LaF3:Yb,Ho nanophosphors,
a
hybrid switchable system has been obtained. Because DTE
has negligible absorbance at 980 nm in both the open form and
the PSS, whereas LaF3:Yb,Ho nanophosphors can emit visible
luminescence by excitation at 980 nm due to the large anti-
Stokes’ shift, a novel and unique route to a highly efficient
nondestructive optical memory can be developed in this DTE/
LaF3:Yb,Ho hybrid nanosystem via an intermolecular energy
transfer process.
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This work was supported by the National Science Founda-
tion of China (20571016, 20501006, 20775017 and 20771027),
Shanghai Sci. Tech. Comm. (06J14016, 06QH14002), National
ꢀc
This journal is The Royal Society of Chemistry 2008
4788 | Chem. Commun., 2008, 4786–4788