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4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
1000
2000
3000
4000
5000
Brightness (Cd/m2)
Fig. 8. Current densityequantum efficiency of ITO/CuPc/a-NPD/MADN (BDDFA, 2e3%)/
Alq3/LiF/Al device.
layers consists of CuPc as the anode buffer layer, a-NPD as the hole-
transport layer, MADN (BDDFA, 2e3%) as the emitter, Alq3 as the
electron-transport layer, and LiF as the electron-injection layer. In this
study, MADN was used as a host for blue-emitting electrolumines-
cence devices [3]. The currentevoltageeluminescence (IeVeL) char-
acteristic of the device is shown in Fig. 6. The EL spectrum from
the ITO/CuPc/a-NPD/MADN(BDDFA, 2e3%)/Alq3/LiF/Al device shows
a maximum value at 462 nm (Fig. 7). The EL spectrum of the BDDFA is
in good agreement with the PL spectrum, indicating the both EL and
PL originate from the same radiative decay process of a singlet exciton.
The brightness of the device was 4600 cd/m2 (7.6 V) at 10 mA
with a turn-on voltage of 4.29 V (0.01 mA). The device showed the
maximum current efficiency of 4.17 cd/A, the maximum power effi-
ciency of 2.1 lm/W and maximum quantum efficiency of 3.3% (Fig. 8).
The CIE color chromaticity of device was (x ¼ 0.14, y ¼ 0.17).
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4. Conclusion
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A new blue emitter, BDDFA, in which two bulky diphenyl-amine-
fluorenes are connected at the 9 and 10 positions of anthracene was
developed. This structure leads to non-coplanar and inhibited inter-
molecular interaction. A multilayer organic EL device constructed
using 2% BDDFA-doped MADN as the emitting layer produced a bright
blue emission with a narrow FWHM of 54 nm. The device achieved
maximum brightness of 4600 cd/m2 and maximum quantum effi-
ciency of 3.3% (power efficiency of 2.1 lm/W, current efficiency of
4.17 cd/A) and exhibits a blue CIE (Commission Internationale de
l'Eclairage) chromaticity coordinates (x ¼ 0.14, y ¼ 0.17).
Acknowledgments
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deep-blue organic light-emitting diodes with doped transport layers.
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Synthesis, optical and morphological characterization of soluble main chain
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blue emitting materials for organic light-emitting diode applications. Chem-
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diodes using an anthracene-based emitting material. Thin Solid Films
2008;516:2917e21.
This research was financially supported by Korea Institute for
Advancement in Technology through the Workforce Development
Program in Strategic Technology, by Strategic Technology Under
Ministry of Knowledge Economy of Korea and by Basic Science
ResearchProgramthroughtheNationalResearchFoundationofKorea
(NRF) funded by the Ministry of Education, Science and Technology
(2009-0068352).
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