M. Krishna Kumar et al. / Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 125 (2014) 79–89
87
Table 4
formation, etc., when an optical material exposed to laser radia-
tion. LID threshold refers to the fluence, which causes such dam-
ages. LID threshold of the optical materials are getting an
important role due to high optical intensities involved in nonlinear
process and it must withstand to high power intensities [55]. For
LID experiment, the Q-switched 1064 nm Nd:YAG pulsed laser
was used. The laser beam profile with repetition rate of 10 Hz
and pulse width of 6 ns was used. The (100) plane of the crystal
was polished and subjected to the LID threshold measurement.
The polishing technique of the material produces minimum sub-
surface damage and it can be raised the surface damage threshold.
The rear surface damages occurred due to Fresnel reflection loss at
the front surface result in less energy [56]. The multishot LID mea-
surement was made on the crystal with 1 mm beam spot. The out-
put intensity of the laser was controlled with variable attenuator
and delivered on the surface of the sample located at the near
focusing of the converging lens. The energy density (E) of the laser
beam was noted for which the crystal gets damaged. The surface
LID threshold of BMST crystal was calculated using,
Comparison of powder SHG efficiency of BMST with some DAST based organic
crystals.
Crystal
SHG efficiency
References
DAST
MBST
HMSB
CMST
BMST
1000
17
11
10.2
4.7
[14]
[46]
[47]
[48]
Present work
is being excited using a beam of light that leads to the creation of
an electron–hole (e–h) pair and it may recombine across the gap
and emit a photon with energy equal to band gap [50]. The e–h
recombination process can be occurred because, excited electron
and hole cannot remain in their initial excited states for very long,
instead they can relax very rapidly (ꢅ10–13 ns) to the lowest en-
ergy states within their respective bands by emitting phonons.
Fig. 12 shows the room temperature PL spectrum of BMST crystal,
which is excited at 360 nm. The donor–acceptor type and ionic
property of the compound may give rise to luminescence. The
broad photoluminescence emission (PLE) peak seen in the spectra
at 432 nm is due to interaction between the electronic system of
the luminescent center and the vibrations of ions which have it.
Such a broad PLE emission was caused by diverse electronic tran-
sitions occurring in different energy levels due to deep or shallow
holes within the band gap [51]. PL spectra consists two main peaks
and one is near band edge transition usually lying at the ultraviolet
region at 432 nm and other is in red region at 646 nm, which is re-
lated to deep level defect transitions. The tail band structure PL
emission peak at 646 nm is due to the defects of the crystal [52].
The deep holes are origin states for the green, yellow, orange and
red PL emissions, while the shallow holes are responsible for the
violet and blue emissions [53]. In the present study, broad PL emis-
sion at 432 nm violet emission is an indicative of the charge trans-
fer process as well as the trapping of electrons and it is due to the
contribution of the shallow holes than the deep holes [54]. In addi-
tion, the weak PL emission peak at 646 nm is due to fewer contri-
butions from deep holes in the energy levels. Thus, PLE spectrum
revealed that, BMST crystal exhibits blue shift emission, which is
most useful for luminescent applications.
PðdÞ ¼ E=
s
A
ð5Þ
where E is the intensity of the irradiant laser beam (mJ),
s
is the
pulse width (ns) and A is the area of the circular spot size (cm2).
The calculated LID threshold value of BMST crystal is found to be
1.50 GW/cm2. Further, the LID threshold values are compared with
familiar NLO crystals and are given in Table 5 [57,58]. It is clear that,
BMST possesses lesser LID than DAST crystal and has higher value
than KDP crystal, which is most widely used in NLO applications.
Thermal analyses
Thermogravimetric analysis measures the change in mass of a
sample on heating and useful to study the crystallization. Thermo-
gravimetry (TG), differential thermal analysis (DTA) and differen-
tial scanning calorimetry (DSC) are quite useful, since they
provide reliable information on the physico-chemical parameters,
characterizing the processes of transformation of solids or partici-
pation of solids in processes of isothermal or non-isothermal heat-
ing [59,60]. The SDT Q600 V8 instrument was used to record
TG-DTA thermogram of the compound in nitrogen atmosphere at
the heating rate of 20 °C/min (Fig. 13). The TGA curve revealed that,
three distinct weight losses stages occurred on sample: the first
one at about 294.93 °C connected with ꢅ2% mass loss was accom-
panied by endothermic effect and was attributed to the removal of
moisture absorbed by the compound. The second one begun at
about 294.93 °C after melting and it extended up to 474.5 °C. It is
connected with ꢅ71% mass loss which is indicative for the decom-
position of pyridine moiety, vaporization and burning of volatile
gaseous such as SO2, CO2, and NO2 produced from the thermal deg-
radation of the compound. Similarly in the DTA- curve, one main
endothermic peak was observed at about 288.07 °C and it is con-
nected with melting of the compound. After the melting tempera-
ture, compound led to decomposition on further heating. The third
decomposition step at temperature above 474.5 °C was observed in
Laser induced damage threshold study
Laser-induced damage (LID) in optical materials refers to
permanent damage caused by melting, ablation, cracking, plasma
7.4
432 nm
+
7.2
7.0
6.8
6.6
6.4
6.2
6.0
646 nm
+
Table 5
Comparison of laser damage threshold value of BMST crystal with some well-known
NLO crystals.
Crystal
Laser damage threshold (GW/cm2)
References
KDP
0.2
[57]
Urea
1.5
[57]
Beta-barium borate
L-Arginine phosphate
DAST
5.0
10.0
2.8
[57]
[57]
[58]
350
400
450
500
550
600
650
700
750
Wavelength (nm)
BMST
1.24
Present work
Fig. 12. Photoluminescence emission spectrum of BMST crystal excited at 360 nm.