ELECTRONIC EFFECTS AND MECHANISTIC FEATURES IN THE REARRANGEMENT-DISPLACEMENT REACTIONS OF ARYL(CHLOROMETHYL)DIPHENYLSILANES WITH FLUORIDE ION

Article abstract of DOI:10.1016/S0040-4039(00)88733-X

At 25 deg C aryl migrations from negatively-charged pentacoordinate silicon correlate with the abilities of the rearranging groups to bear negative charge, but at lower temperatures the migrations become less dependent on electron-withdrawing stabilization.