ChemComm
Communication
This work was supported by the National Natural Sciences
Foundation of China (21190031, 51273212, 21103023) and the
National Basic Research Program of China (2011CB808405).
Notes and references
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Fig. 4 Transistor characteristics of DHB-QDTB based devices. (a) Output
curve; (b) transfer curve; (c) mobility distribution; (d) AFM image of
the transistors.
(32.74 Å, see Table S1, ESI†) and the long-axis length of
compound 1 (ref. 16) (31.81 Å) (see Fig. S8, ESI†), indicating
that DHB-QDTB has the long axis upright to the substrate in the
micro/nanosized wires.
In order to investigate the charge transport properties of
DHB-QDTB, transistor devices based on individual crystalline
wires were fabricated into bottom-gate/top-contact architec-
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Fig. 4 shows typical transfer and output curves of the devices.
The transistors exhibited high performance with an average
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In summary, D–A type n-channel organic semiconductor
DHB-QDTB, in which quinoidal benzo[1,2-b:4,5-b0]dithiophene
was an acceptor unit, was designed and synthesized. DHB-QDTB
displayed a low lying LUMO energy level at ꢀ4.56 eV and strong self-
assembly properties. The transistors based on single micrometre-
sized wires exhibited high performance with mobilities up to
0.88 cm2 Vꢀ1 sꢀ1 in ambient conditions, one of the highest
values for solution processable n-channel OSCs. These results
suggest that quinoidal units are promising acceptor blocks in
D–A type n-channel OSCs.
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