SEMICONDUCTING AMORPHOUS FILM CONTAINING CARBON NITROGEN AND BORON.

Article abstract of DOI:10.1149/1.2095953

A semiconductor amorphous film containing carbon, nitrogen, and boron was deposited on a variety of substrates through the pyrolysis, in a closed system, of a borazine derivative. Physical and physicochemical characterization revealed a carbonaceous material having an amorphous matrix similar to vitreous carbon, but denser, with embedded crystallites of boron nitride. The film is highly reflective, adherent, hard, and behaves as a narrow band semiconductor. The bandgap is susceptible to modification by chemical treatment.

Full text of DOI:10.1149/1.2095953

Downloaded on 2015-04-29 to IP 198.91.37.2 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-29 to IP 198.91.37.2 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-29 to IP 198.91.37.2 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-29 to IP 198.91.37.2 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).