S.-H. Huang et al. / Polyhedron 29 (2010) 1754–1759
1759
Office of Science, under Contract No. DE-AC05-00OR22725 man-
aged by UT Battelle, LLC. We thank Prof. David M. Hoffman for pro-
viding us with a copy of the 1H NMR spectrum of Ta(NMe2)5 and
Dr. Yun Ling (UBC) for recording the EI mass spectra of TaCl(N-
Me2)3[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2].
References
[1] (a) G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89 (2001) 5243;
(b) M. Leskelä, M. Ritala, Thin Solid Films 409 (2002) 138;
(c) M. Leskelä, M. Ritala, Angew. Chem., Int. Ed. 42 (2003) 5548;
(c) C.L. Dezelah IV, J. Niinistö, K. Kukli, F. Munnik, J. Lu, M. Ritala, M. Leskelä, L.
Niinistö, Chem. Vap. Deposition 14 (2008) 358.
[2] (a) R.M. Fix, R.G. Gordon, D.M. Hoffman, Chem. Mater. 2 (1990) 235;
(b) C.J. Carmalt, A.H. Cowley, R.D. Culp, R.A. Jones, Y.-M. Sun, B. Fitts, S.
Whaley, H.W. Roesky, Inorg. Chem. 36 (1997) 3108;
(c) J.T. Scheper, P.J. McKarns, T.S. Lewkebandara, C.H. Winter, Mater. Sci.
Semicond. Process. 2 (1999) 149;
(d) R. Fix, R.G. Gordon, D.M. Hoffman, Chem. Mater. 5 (1993) 614;
Fig. 5. Grazing incidence X-ray diffraction pattern of the Ta2O5 film deposited onto
Si at 200 °C employing Ta(NMe2)4[N(TMS)NMe2] and H2O.
(e) X. Liu, R. Babcock, M.A. Lane, J.A. Belot, A.W. Ott, M.V. Metz, C.
Kannewurf, R.P.H. Chang, T. Marks, Chem. Vap. Deposition 7 (2001) 25;
R
(f) A. Baunemann, D. Bekermann, T.B. Thiede, H. Parala, M. Winter, C. Gemel,
R.A. Fischer, J. Chem. Soc., Dalton Trans. (2008) 3715;
(g) A. Baunemann, Y. Kim, M. Winter, R.A. Fischer, J. Chem. Soc., Dalton Trans.
(2006) 121;
(h) A. Baunemann, M. Lemberger, A.J. Bauer, H. Parala, R.A. Fischer, Chem. Vap.
Deposition 13 (2007) 77;
(i) M.M. Banaszak-Holl, P.T. Wolczanski, G.D. Van Duyne, J. Am. Chem. Soc.
112 (1990) 7989;
(j) P. Alén, T. Aaltonen, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, J.C.
Hooker, J.W. Maes, J. Electrochem. Soc. 151 (2004) 523;
(k) A. Baunemann, D. Rische, A. Milanov, Y. Kim, M. Winter, C. Gemel, R.A.
Fischer, J. Chem. Soc., Dalton Trans. (2005) 3051;
X-ray diffraction spectrum depicted in Fig. 5. The used ALD param-
eters were: 1.0 s for the tantalum precursor with a 1.0 s purge, fol-
lowed by a 2.0 s exposure to water and a 2.0 s purge. The film
looked homogeneous, and the measured growth rate was ca.
0.35 Å/cycle. The film density and roughness were found to 6.2 g/
cm3 and 1.1 mm, respectively, as ascertained by XRD analyses.
4. Conclusions
(l) J.-S. M Lehn, P. van der Heide, P.Y. Wang, S. Suh, D.M. Hoffman, J. Mater.
Chem. 14 (2004) 3239;
(m) C. Amato-Wierda, E.T. Norton Jr., D.A. Wierda, Electrochem. Solid-State
Lett. 2 (1999) 613;
(n) M. Lemberger, A. Baunemann, A.J. Bauer, Mircoelectron. Reliab. 47 (2007)
635;
(o) M.M. Banaszak Holl, P.T. Wolczanski, D. Proserpio, A. Bielecki, D.B. Zax,
Organometallics 8 (1996) 2468.
The new hydrazido-substituted compounds TaCl(NMe2)3-
[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2] have been prepared
through appropriate hydrazinolysis and LiNMe2 metathesis routes.
The solid-state structures of these new products have been
unequivocally determined by X-ray crystallography. VT 1H NMR
measurements have established the highly fluxional nature of the
amido and hydrazido ligands in these compounds, and a reversible
equilibrium involving g2 and g1 forms of the ancillary hydrazido
ligand is supported by the temperature-dependent NMR data.
The all-nitrogen derivative Ta(NMe2)4[N(TMS)NMe2] has been ex-
plored as a precursor for the deposition of TaN and Ta2O5 thin
films. Despite our high expectations concerning Ta(NMe2)4-
[N(TMS)NMe2] as a new precursor for the formation of TaN films
under mild conditions, Ta(NMe2)4[N(TMS)NMe2] is extremely sen-
sitive to temperature and this enhanced lability leads to deleteri-
ous decomposition. The synthesis and ALD examination of new
derivatives based on Ta(NMe2)4[N(TMS)NMe2] are currently
planned and these data will be disseminated in due course.
[3] M. Juppo, M. Ritala, M. Leskelä, J. Electrochem. Soc. 147 (2000) 3377.
[4] (a) E. Sebe, M.J. Heeg, C.H. Winter, Polyhedron 25 (2006) 2109;
(b) D. Gaess, K. Harms, M. Pokoj, W. Stolz, J. Sundermeyer, J. Inorg. Chem. 46
(2007) 6688.
[5] M.H. Chisholm, J.C. Huffman, L.-S. Tan, Inorg. Chem. 20 (1981) 1859.
[6] For an alternative, one-step synthesis of TaCl(NMe2)4, see: S.-J. Chen, H. Cai, Z.-
L. Xue, Organometallics 28 (2009) 167.
[7] U. Wannagat, F. Höfler, Monatsh. Chem. 97 (1966) 976.
[8] P.N. Riley, J.R. Parker, P.E. Fanwick, I.P. Rothwell, Organometallics 18 (1999)
3579.
[9] D.F. Shriver, The Manipulation of Air-Sensitive Compounds, McGraw-Hill, New
York, 1969.
[10] APEX2 Version 2.02, Bruker Advanced Analytical X-ray Systems, Inc. Copyright
2005, Madison, WI.
[11] SAINT Version 6.02, Bruker Analytical X-ray Systems, Inc. Copyright 1997-1999.
[12] G.M. Sheldrick, Acta Crystallogr., Sect. A 62 (2008) 112.
[13] (a) M. Nespoloa, G. Ferrarisb, Acta Crystallogr., Sect. A 60 (2004) 89;
See also: IUCr Online Dictionary of Crystallography (2010), http://
[14] A.L. Spek, J. Appl. Crystallogr. 36 (2003) 7.
5. Supplementary data
[15] J.W. Akitt, B.E. Mann, NMR and Chemistry, Stanley Thornes, UK, 2000.
CCDC 737251 and 737252 contain the supplementary crystallo-
graphic data for TaCl(NMe2)3[N(TMS)NMe2] and Ta(NMe2)4-
[N(TMS)NMe2]. These data can be obtained free of charge via
Crystallographic Data Centre, 12 Union Road, Cambridge CB2 1EZ,
UK; fax: (+44) 1223-336-033; or e-mail: deposit@ccdc.cam.ac.uk.
[16] The g2 g1 dissociation of the a trimethylhydrazido(I) ligand has also been
-
invoked as an intermediate in the equilibration of the hydrazido ligands in the
homoleptic compound Zr(NMeNMe2)4. See: J.-S.M. Lehn, D.M. Hoffman, Inorg.
Chim. Acta 345 (2003) 327.
[17] H. Herrmann, J.L. Fillol, T. Gehrmaann, M. Enders, H. Wadepohl, L.H. Gade,
Chem. Eur. J. 14 (2008) 8131.
[18] M. Lappert, P. Power, A. Protchenko, A. Seeber, Metal Amide Chemistry, Wiley,
NY, 2009.
[19] M.K.T. Tin, N. Thirupathi, G.P.A. Yap, D.S. Richeson, J. Chem. Soc., Dalton Trans.
(1999) 2947.
Acknowledgments
[20] H. Cai, X. Yu, T. Chen, X.-T. Chen, X.-Z. You, Z. Xue, Can. J. Chem. 81 (2003)
1398.
[21] Z. Wu, H. Cai, X. Yu, J.R. Blanton, J.B. Diminnie, H.-J. Pan, Z. Xue, J.C. Bryan,
Organometallics 21 (2002) 3973.
Financial support from the Robert A. Welch Foundation (Grant
B-1093-MGR) and LAM Semiconductor is greatly appreciated. X.
Wang acknowledges the support by the U.S. Department of Energy,
[22] S.-H. Huang, X. Wang, M.G. Richmond, J. Chem. Crystallogr. 40 (2010) 173.