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Energy Sciences, Materials Sciences and Engineering Division of
the U.S. Department of Energy under contract DE-AC02-
05CH11231. A.B.S. was funded by Applied Materials, Inc., and
Entegris, Inc., under the I-RiCE program. J.P.L. and J.B. were
supported in part by the Office of Naval Research BRC program.
J.P.L. acknowledges a Berkeley Fellowship for Graduate Studies
and the NSF Graduate Fellowship Program. Q.W. and M.J.K. were
supported by the NRI SWAN Center and Chinese Academy of
Sciences President’s International Fellowship Initiative
(2015VTA031). G.P. and H.-S.P.W. were supported in part by the
SONIC Research Center, one of six centers supported by the
STARnet phase of the Focus Center Research Program (FCRP) a
Semiconductor Research Corporation program sponsored by
MARCO and DARPA. A.J., H.-S.P.W., and J.B. acknowledge the NSF
Center for Energy Efficient Electronics Science (E3S). A.J.
acknowledges support from Samsung. The authors acknowledge
the Molecular Foundry, Lawrence Berkeley National Laboratory for
access to the scanning electron microscope. The authors acknowledge
H. Fahad for useful discussions about the analytical modeling. All data
are reported in the main text and supplementary materials.
The effect of MoS2 thickness on the device
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scaling limit of the gate length, the semiconductor
channel thickness must also be scaled down ag-
gressively, as described earlier. The electrostatic
control of the SWCNT gate on the MoS2 channel
decreased with increasing distance from the ZrO2-
MoS2 interface. Thus, as the MoS2 flake thickness
was increased, the channel could not be complete-
ly depleted by applying a negative VGS. Because of
this effect, the SS for a 12-nm-thick MoS2 device
(~170 mV per decade) was much larger than that
of bilayer MoS2 (~65 mV per decade), and as the
thickness of MoS2 was increased to ~31 nm, the
device could no longer be turned off (Fig. 4A).
The experimental SS as a function of MoS2 thick-
ness was qualitatively consistent with the TCAD
simulations (Fig. 4B and S10), showing an in-
creasing trend with increasing channel thickness.
The unwanted variations in device performance
caused by channel thickness fluctuations (Fig. 4B
and fig. S10), and the need for low Off state cur-
rent at short channel lengths (Figs. 1 and 3), thus
justify the need for layered semiconductors like
TMDs at the scaling limit.
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SUPPLEMENTARY MATERIALS
Materials and Methods
Supplementary Text
Figs. S1 to S10
Table S1
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ACKNOWLEDGMENTS
S.B.D. and A.J. were supported by the Electronics Materials
program funded by the Director, Office of Science, Office of Basic
30 June 2016; accepted 7 September 2016
10.1126/science.aah4698
BIOCATALYSIS
TMDs offer the ultimate scaling of thickness
with atomic-level control, and the 1D2D-FET
structure enables the study of their physics and
electrostatics at short channel lengths by using
the natural dimensions of a SWCNT, removing
the need for any lithography or patterning pro-
cesses that are challenging at these scale lengths.
However, large-scale processing and manufac-
turing of TMD devices down to such small gate
lengths are existing challenges requiring future
innovations. For instance, research on develop-
ing process-stable, low-resistance ohmic contacts
to TMDs, and scaling of the gate dielectric by
using high-k 2D insulators is essential to further
enhance device performance. Wafer-scale growth
of high-quality films (30) is another challenge
toward achieving very-large-scale integration of
TMDs in integrated circuits. Finally, fabrication
of electrodes at such small scale lengths over large
areas requires considerable advances in litho-
graphic techniques. Nevertheless, the work here
provides new insight into the ultimate scaling of
gate lengths for a FET by surpassing the 5-nm
limit (3–7) often associated with Si technology.
An artificial metalloenzyme with the
kinetics of native enzymes
P. Dydio,1,2* H. M. Key,1,2* A. Nazarenko,1 J. Y.-E. Rha,1 V. Seyedkazemi,1
D. S. Clark,3,4 J. F. Hartwig1,2
†
Natural enzymes contain highly evolved active sites that lead to fast rates and high selectivities.
Although artificial metalloenzymes have been developed that catalyze abiological
transformations with high stereoselectivity, the activities of these artificial enzymes are
much lower than those of natural enzymes. Here, we report a reconstituted artificial
metalloenzyme containing an iridium porphyrin that exhibits kinetic parameters similar to
those of natural enzymes. In particular, variants of the P450 enzyme CYP119 containing iridium
in place of iron catalyze insertions of carbenes into C–H bonds with up to 98% enantiomeric
excess, 35,000 turnovers, and 2550 hours−1 turnover frequency. This activity leads to
intramolecular carbene insertions into unactivated C–H bonds and intermolecular carbene
insertions into C–H bonds. These results lift the restrictions on merging chemical
catalysis and biocatalysis to create highly active, productive, and selective metalloenzymes
for abiological reactions.
he catalytic activity of a metalloenzyme is
determined by both the primary coordina-
tion sphere of the metal and the surrounding
protein scaffold. In some cases, laboratory
evolution has been used to develop variants
actions for which there is no known enzyme
(abiological transformations) (3, 4).
Although the reactivity of these artificial sys-
tems is new for an enzyme, the rates of these
reactions have been much slower and the
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of native metalloenzymes for selective reactions
of unnatural substrates (1, 2). Yet with few ex-
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enzymes undergo are limited to those of bio-
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qualities of enzymes with the diverse reactivity of
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artificial metalloenzymes catalyze classes of re-
1Department of Chemistry, University of California, Berkeley,
CA 94720, USA. 2Chemical Sciences Division, Lawrence
Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA
94720, USA. 3Department of Chemical and Biomolecular
Engineering, University of California, Berkeley, CA 94720,
USA. 4Molecular Biophysics and Integrated Bioimaging
Division, Lawrence Berkeley National Laboratory, 1 Cyclotron
Road, Berkeley, CA 94720, USA.
*These authors contributed equally to this work. †Corresponding
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102 7 OCTOBER 2016 • VOL 354 ISSUE 6308
sciencemag.org SCIENCE