10.1002/chem.201701952
Chemistry - A European Journal
COMMUNICATION
Formation of Nanoparticle Ternary Group 11 (Cu, Ag) Bismuth
Sulfides and Au(0) utilizing Bismuth Dithioates under Mild
Conditions
Dimuthu C. Senevirathna,[a] Melissa V. Werrett,[a] Narendra Pai,[a] Victoria. L. Blair,[a] Leone Spiccia,[a]
and Philip C. Andrews*[a]
Abstract: The formation of mixed metal sulfides of AgBiS2 and
Cu3BiS2 via a simple two-step process utilizing bismuth dithioates as
single source Bi and S precursors is described. Sono-chemical
reaction of Bi2O3 with six different aryldithioc acids (benzodithioic,
BDT-H; 4-methoxybenzodithioic, 4-MBDT-H; 3-methylbenzodithioic,
3-MBDT-H; 2-mesitylenedithioic, 2-MDT-H; 4-fluorobenzodithioic, 4-
FBDT-H; and 2-thiophenedithioic, 2-TDT-H) resulted in the following
complexes; [Bi(BDT)3] 1, [Bi(4-MBDT)3] 2, [{Bi(3-MBDT)3}2·C7H8]
(32·C7H8), [Bi(2-MDT)3] 4, [Bi(4-FBDT)3] 5 and [Bi(2-TDT)3] 6.
Microwave irradiation of these bismuth(III)aryldithioate complexes
with AgNO3 or CuCl under mild reaction conditions (140 °C)
resulted in the respective mixed metal sulfides. Attempt to
synthesize AuBiS2 using similar reaction protocols were
unsuccessful and resulting only in the formation of elemental Au(0),
S8 and BiOCl.
particular interest as a semiconductor with a comparatively
narrow direct bandgap and absorption edge at ca 950 nm[9] that
can be modified via incorporation of another metal.[10,11]
Ternary first group metal bismuth chalcogenides are solvent
processable and with a tunable bandgap,[11] intrinsically low
lattice thermal conductivity,[3] and photoconductivity.[12] AgBiS2
and Cu3BiS3 are known to exhibit even broader absorption than
Bi2S3 and provide improved charge mobility. AgBiS2, a highly
stable, non-toxic material with its photoconductivity, absorption
coefficient (105 to 103 cm−1) and beneficial thermoelectric
properties, has been used as a sensitizer, counter electrode and
charge transfer material in solar cells.[12,13] Of the two crystalline
phases of AgBiS2; the room temperature β hexagonal phase and
the α cubic rock salt phase (formed at ca 473 K),[3,14] it is the
cubic phase which has shown appreciable photovoltaic
performance.[12] Likewise, Cu3BiS3 with its orthorhombic crystal
structure and direct band gap, as well as high absorption
coefficient of ~105 cm−1 and possibility of being a p-type
material, shape it as a prospective material for photovoltaic and
optoelectronic applications.[11]
Implementation of semiconductor metal chalcogenides in
forefront technologies such as opto-electronics, thermo-electrics,
optical recording, and catalysis, as well as for the creation of
advanced coatings, pigments and lubricants is rapidly
expanding.[1–3] From the perspective of opto-electronic
applications, cadmium and lead chalcogenides are arguably
among the most intensively studied compounds[3,4] from which
highly useful tunable properties are successfully exploited in
industry.[5] However, the pernicious toxicity of both Cd and Pb
stimulates the search for new materials with similar properties
that can be formed from abundant and non-toxic elements.
Currently, this is difficult to achieve with binary systems, but
ternary chalcogenides offer an interesting alternative with
potentially higher flexibility for the band level engineering, which
is critical for photoabsorption and photoconductive applications.
A wide range of synthesis methods exist to produce cubic
phase AgBiS2 nanomaterials. Those include vacuum fusing[3]
microwave synthesis,[14] flux technique,[15,16] solvothermal[17,18]
and ligand assisted methods.[12] A common feature of the
reported synthetic approaches is the use of an isolated
individual precursor for each element in the ternary system. High
temperature flux methods use Bi and Ag metals with sulfur
powder as the starting materials,[3,19] whereas bismuth and silver
nitrates or acetates with a variety of chalcogen precursors like
thiourea[14]
thiosemicarbazide,[18]
L-cysteine,[17]
hexamethyldislathiane[12] or Na2S[13] have been employed for the
low temperature synthesis, e.g. by using hydrothermal or
microwave irradiation. Similarly, a broad arsenal of methods to
synthesize Cu3BiS3, using individual precursors for each
component in the system, have been reported. These methods
include spray pyrolysis,[20] sputtering,[11,21,22] co-evaporation,[23,24]
solid-state synthesis,[25,26] solvothermal[27,28] and microwave
methods.[29]
Multinary chalcogenides have been increasingly investigated
and in particular,[6,7] nano size particles offer extended
possibilities to control the composition and internal structure of
the materials prior to processing, compared to the bulk. For
example, copper indium selenide has off-stoichiometric
structures in the bulk (e.g. CuIn3Se5, CuIn5Se8, Cu2In4Se7) which
leads to less deep trap states resulting in compromising its opto-
electronic properties.[8] Among metal chalcogenides with
environmentally benign elements, bismuth sulfide (Bi2S3) is of
Controlling the stoichiometry, size and impurity in
chalcogenides is an important factor, since this directly affects
the photo absorption and intrinsic defects in the material.
However, many methods used for isolating ternary
chalcogenides require high temperature or vacuum[2,13] as well
as individual precursors for each component in the system.
Reducing the number of precursors is advantageous to improve
purity, reduce defects and avoid the chance of pre-reaction
forming binary counter products.[30] Here, lies the relevance of
mitigating a modified synthesis strategy with novel dual source
precursors for producing ternary chalcogenides.
[a]
Mr. D. C. Senevirathna, Dr. M. V. Werrett, Mr. N.Pai, Dr. V. L. Blair,
Prof L. Spiccia, Prof. P. C. Andrews.
School of Chemistry
Monash University
Clayton, Melbourne, VIC 3800
Australia
Supporting information for this article is given via a link at the end of
the document.
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