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DOI: 10.1039/C6CC01665K
COMMUNICATION
Journal Name
and the reaction selectivity are highly dependent on the type of
the arene ligands in this system. Thus, the precise design of the
reaction space using various arene ligands will be performed in
due course for the further improvement of this system.
This work was supported by the "Development of
Innovative Catalytic Processes for Organosilicon Functional
Materials" project (PL: K.S.) from the New Energy and
Industrial Technology Development Organization (NEDO).
charge of –0.57. Since the cationic Ni atom preferably keeps a
distance from the electropositive Si atom whose NBO charge is
1.31, the Si–H bond cleavage proceeds without any direct
participation of the Ni(II) atom. Another notable feature of this
process is the involvement of the allyl group as a nonꢀinnocent
ligand. Orbital analysis suggested the involvement of C2 (2p)
orbital for these steps. Figure 2a exhibits the 33th orbital of
INT4, which includes σꢀbonding interaction of Si (3s) and H1
(1s). This interaction is weakened, and the Si 3s orbital access
the C2 2p orbital to form bonding interaction upon going to
INT5 from INT4 (Figure 2b).
Notes and references
1
B. Marciniec, H. Maciejewski, C. Pietraszuk, P. Pawluć in
Hydrosilylation: A Comprehensive Review on Recent
Advances, Springer, Berlin, 2009.
2
B. Marciniec, Coord. Chem. Rev., 2005, 249, 2374; A. K.
Roy, Adv. Organomet. Chem., 2008, 55, 1; D. Troegel and J.
Stohrer, Coord. Chem. Rev., 2011, 255, 1440; Y. Nakajima
and S. Shimada, RSC Adv., 2015, 5, 20603.
3
4
5
J. Y. Wu, B. N. Stanzl and T. Ritter, J. Am. Chem. Soc., 2010,
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S. A. Nye, K. M. Lewis, J. G. P. Delis and P. J. Chirik,
Science, 2012, 335, 567.
Figure 2. (a) 33th orbital of INT4 (b) 34th orbital of INT5. Insets show schematic
pictures of major orbital contributions.
M. Brookhart and B. E. Grant, J. Am. Chem. Soc., 1993, 115
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,
The involvement of the C2 2p orbital is also supported on
the Si–C3 bond forming step. Thus, as the Si atom access the
Y. Kiso, M. Kumada, K. Tamao and M. Umeno, J.
C3 atom, the
σꢀbonding interaction between C2 (2p) and Si
Organomet. Chem., 1973 50, 297; Y. Chen, C. SuiꢀSeng, S.
,
(3p) is concomitantly weakened upon going to INT12 from
INT11 (Figure S8). It is likely that the cooperative bond
forming and dissociating actions of the C2 atom compensate
the energy change along the reaction. As a result, the Si–H
cleavage and Si–C forming steps proceed with moderate energy
barriers.
Boucher and D. Zargarian, Organometallics, 2005, 24, 149;
L. B. Junquera, M. C. Puerta and P. Valerga,
Organometallics, 2012, 31, 2175; I. Buslov, J. Becouse, S.
Mazza, M. MontandonꢀClerc and X. Hu, Angew. Chem. Int.
Ed., 2015, 54, 14523.
V. Srinivas, Y. Nakajima, W. Ando, K. Sato and S. Shimada,
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W. Ando, K. Sato and S. Shimada, J. Organomet. Chem.,
DOI 10.1016/j.jorganchem.2016.02.025.
A. J. Chalk and J. F. Harrod, J. Am. Chem. Soc., 1965, 87, 16.
P.ꢀF. Fu, L. Brard, Y. Li and T. J. Marks, J. Am. Chem. Soc.,
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P. B. Glaser and T. D. Tilley, J. Am. Chem. Soc., 2003, 125,
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6
In the proposed mechanism, agostic Si–H and C–H bond
interactions with the Ni atom play an important role. For
examples, agostic interactions of Si–H and C–H bonds
successfully stabilize the electron deficient Ni center in TS10-11
.
7
8
Furthermore, the agostic interactions facilitate the rotation of
Si–C2 and Ni–C3 bonds. Therefore, it is reasonable that the
system is not applicable to the hydrosilylation using tertially
silanes, which cannot form stable intermediates through the Si–
H agostic interaction after the Si–H bond cleavage. Indeed,
optimization of INT10 and TS10-11 using Et3SiH was not
successful due to their high instability. On the other hand, the
effect of the agostic interactions does not explain the low
reactivity of the catalytic system towards the hydrosilylation
using primary silanes. To clarify this point, a DFT study on
hydrosilylation of 1ꢀbutene with EtSiH3 was performed. It was
revealed that the rateꢀlimiting step including the agostic Si–H
bond dissociation proceeds via TS10ꢀ11* with a higher energy
barrier compared with that in the Et2SiH2 system by 1 kcal/mol
probably due to the strong agostic interaction between the less
sterically hindered EtSiH2 group and the Ni center. Indeed, the
Ni–Si and Ni–H bond lengths in the transition state structure
are 2.66 and 2.28 Å, respectively, which are 0.15 – 0.3 Å
shorter than those in TS10-11. The energy difference might be
one of the reasons for the low reactivity of monoalkylsilane in
this system.
9
10 J. Cámpora, M. del Mar Conejo, M. L. Reyes, K. Mereiter
and E. Passaglia, Chem. Commun., 2003, 78.
11 Figures S2 and S3 in the supporting information show the
details.
12 W. Chen, S. Shimada, M. Tanaka, Y. Kobayashi and K. Saigo
J. Am. Chem. Soc., 2004, 126, 8072; J. A. Hatnean, R. Beck,
J. D. Borrelli and S. A. Johnson, Organometallics, 2010, 29
6077; P. Fischer, K. Gӧtz, A. Eichhorn and U. Radius
Organometallics, 2012, 31, 1374.
,
13 T. Zell, T. Schaub, K. Radacki and U. Radius, Dalton Trans.,
2011, 40, 1852.
14 S. N. MacMillan, W. H. Harman and J. C. Peters, Chem. Sci.,
2014, 5, 590.
15 S. Sakaki, N. Mizoe, M. Sugimoto and Y. Musashi, Coord.
Chem. Rev., 1999, 190-192, 933.
In summary, this study demonstrated the utility of cationic
nickel allyl complexes as an olefin hydrosilylation catalyst. It is
to be noted that the system exhibits high selectivity towards
reactions using dialkylsilanes. The DFT study provides the
evidence for the novel mechanism, which is assisted by the
nonꢀinnocent allyl ligand for both the Si–H bond cleavage and
the Si–C bond formation steps. Such a mechanism is different
from either the conventional oxidative addition/reductive
elimination or σꢀbond metathesis process. The catalytic activity
4 | J. Name., 2012, 00, 1-3
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