Angewandte
Chemie
ingly, the resonance signal of the other low-coordinate 29Si
=
g) N.Tokitoh, Acc. Chem. Res. 2004, 37, 86.Si C compounds:
h) A.G.Brook, S.C.Nyburg, F.Abdesaken, B.Gutekunst, G.
Gutekunst, R.K.Kallury, Y.C.Poon, Y-.M.Chang, W.Wong-
Ng, J. Am. Chem. Soc. 1982, 104, 5667; i) N.Wiberg, G.Wagner,
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ꢀ
ꢀ
type is shifted to higher field as a result of s(Si M)!s*(Si
Si) negative hyperconjugation (Figure 2).
The E configuration of 2 was confirmed by X-ray
diffraction analysis.[10] This also proved that the Si1 atom
229; j) N.Wiberg, G.Wagner,
k) Reviews: A.G.Brook, K.M.Baines, Adv. Organomet. Chem.
1986, 25, 1; l) A.G. Brook, M.A. Brook, Adv. Organomet.
Chem. Ber. 1986, 119, 1467;
ꢀ
has trigonal-planar geometry and that the Si1 P1 distance of
206.4(1) pm is significantly shorter than that in 1 (Figure 3).
Chem. 1996, 39, 71; m) “Silicon-Carbon and Silicon-Nitrogen
Multiply Bonded Compounds”: T.Müller, W.Ziche, N.Auner in
The Chemistry of Organic Silicon Compounds, Vol. 2 (Eds.: Z.
Rappoport, Y.Apeloig), Wiley, Chichester, 1998, chap.16,
=
=
p.857. Si Ge and Si Sn compounds: n) K.M. Baines, J.A.
Cooke, Organometallics 1991, 10, 3419; o) K.M. Baines, J.A.
Cooke, Organometallics 1992, 11, 3487; p) V.Y. Lee, M.
Ichinohe, A.Sekiguchi, N.Takagi, S.Nagase,
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Ichinohe, J. Am. Chem. Soc. 2002, 124, 14822.
=
[2] Si N compounds: a) N.Wiberg, K.Schurz, G.Reber, G.Müller,
J. Chem. Soc. Chem. Commun. 1986, 591; b) M.Hesse, U.
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=
P
Organomet. Chem. 1996, 39, 159; see also reference [1m].Si
=
and Si As compounds: d) C.N.Smit, F.Bickelhaupt, Organo-
metallics 1987, 6, 1156; e) Y.van den Winkel, HM. M. .Bas-
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Figure 3. X-ray crystal structure of 2 (ellipsoids drawn at the 50%
probability level; hydrogen atoms omitted for clarity). Selected distan-
ces [pm] and angles [8]: Si1–P1 206.4(1), Si1–Si2 240.2(1), Si1–C2
190.3(4), P1–Zn1 234.9(1), C1–Zn1 199.5(4); Si2-Si1-P1 118.10(6), Si2-
Si1-C2 120.2(1), C2-Si1-P1 121.7(1), Si1-P1-Zn1 103.20(5); sumof the
bond angles at Si1: 3608.
3314; i) M.Driess, S.Rell, H.Pritzkow, R.Janoschek,
Angew.
Chem. 1997, 109, 1384; Angew. Chem. Int. Ed. Engl. 1997, 36,
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Chem. 1996, 39, 193; m) M.Driess, Coord. Chem. Rev. 1995, 145,
=
The shortening of the Si P bond, the slight elongation of the
ꢀ
Si1 Si2 bond, and the smaller P1-Si1-Si2 angle are consistent
=
with the presence of hyperconjugative interactions as
1; n) see also: reference [1m], p.1051; Theoretical aspects of Si
=
=
N, Si P and Si As compounds: o) K.J.Dykema, T.N.Truong,
M.S.Gordon, J. Am. Chem. Soc. 1985, 107, 4535; p) M.Driess,
R.Janoschek, J. Mol. Struct. 1994, 323, 129.
depicted in Figure 2.As expected, the Zn1 atom has
ꢀ
tetrahedral coordination geometry and the value of the P1
Zn1 distance is typical for that of zincphosphanides.[13]
In summary, we have prepared the first phosphasilene
derivatives with terminal hydrogen and zinc substituents at
phosphorus by an unexpectedly simple procedure.These
compounds represent a novel type of thermally robust
building blocks in the chemistry of unsaturated silicon–
phosphorus compounds.Investigations on the use of 1 and 2
for the synthesis of novel conjugated, electron-rich p systems
of types A and B (see Scheme 1) by homo- or hetero-cross-
coupling reactions are currently underway.
[3] a) H.Suzuki, N.Tokitoh, S.Nagase, R.Okazaki,
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try of Compounds with Silicon–Sulfur, Silicon–Selenium and
Silicon–Tellurium Bonds”: D.A.Armitage in The Chemistry of
Organic Silicon Compounds, Vol. 2 (Eds.: Z. Rappoport, Y.
Apeloig), Wiley, Chichester, 1998, chap.31, p.1869.
[4] a) N.Wiberg, W.Niedermayer, G.Fischer, H.Nöth, M.Suter,
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Sekiguchi, Chem. Lett. 2005, 34, 1564.
Received: November 21, 2005
Published online: March 3, 2006
Keywords: metalation · phosphanes · phosphasilenes · zinc
.
[6] M.Driess, H.Pritzkow, U.Winkler, J. Organomet. Chem. 1997,
529, 313.
[7] a) M.Weidenbruch, S.Willms, W.Saak, G.Henkel,
Angew.
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[1] Si Si compounds: a) R.West, M.J.Fink, J.Michl, Science 1981,
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