New Journal of Chemistry p. 29 - 37 (2020)
Update date:2022-08-04
Topics:
Kubo, Yuji
Shimada, Takuma
Maeda, Kentaro
Hashimoto, Yuta
As part of an ongoing study of near infrared (NIR) absorbing dyes applicable to optoelectronics, thieno[1,3,2]oxazaborinine-containing aza-BODIPYs were synthesized for the first time. 3,5-Di(thiophene)-substituted N2O2-type 1 showed a NIR absorption band centered at 780 nm, with a molar extinction coefficient (?max) of 5.51 × 104 M-1 cm-1 in CH2Cl2; however, it was easily hydrolyzed in solution. In comparison, 3-thiophene-containing N2O-type analogues 2 and 3 had greater stability, and NIR absorption bands at 768 nm (?max = 8.62 × 104 M-1 cm-1) and 779 nm (?max = 6.32 × 104 M-1 cm-1), respectively, in CH2Cl2. Notably, these dyes had longer absorption bands than those of all of the structurally constraining aza-BODIPYs reported thus far. CV measurements and theoretical calculations indicated that this shift was the result of a higher-lying HOMO energy level generated by incorporation of thiophene into the aza-BODIPY core. As a potential device application, the 3-loaded film was prepared on indium tin oxide (ITO). The film showed a NIR absorption band at 827 nm, with a wide spectral range, and a λonset value of 897 nm; thus, its applicability as a NIR photodetector was evaluated through fabrication of a single-component device. The ITO/3 (85 nm)/Al (100 nm) device produced a photocurrent of 9.57 × 10-7 A cm-2 at a bias potential of 1 V upon illumination at 850 nm and a fluence of 130 μW cm-2. This demonstrated the potential of thieno[1,3,2]oxazaborinine-containing aza-BODIPY materials in optoelectronic applications such as NIR photodetectors.
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