132
L. Wu et al. / Surface Science 651 (2016) 128–136
2
NO yield from N O decomposition when temperature is between 812 °C
and 947 °C.
The generated O radical can also react with a second N
two NO molecules following Reaction (7):
2
O forming
The effect of CaO on NO selectivity during the N
process is shown in Fig. 4c. The NO selectivity below 620 °C is insignifi-
cant as NO will not be formed from N O decomposition when tempera-
ture is lower than 620 °C. When the reaction zone temperature reaches
18 °C, a significant increase of NO selectivity is seen for the blank
group. This increase for the blank group can be attributed to the low
conversion of N O and the increase of NO formation at 718 °C (around
4.0%). Its error range is around 4% due to the fact that the absolute con-
2
O decomposition
N O þ O → NO þ NO
2
ð7Þ
2
Reactions (5) to (7) consider the N–O bond cleavage during N
mogeneous decomposition. The possibility of N–N bond cleavage and its
2
O ho-
7
succeeding reaction with N
8) and (9):
2
O are also discussed according to Reactions
2
(
1
2
version of N O at 718 °C is so low that the small relative increase of the
NO product is prominently observable in the NO fraction. In comparison
to the catalyzed sample, this is correct, as the total conversion is much
N2O → NO þ N
ð8Þ
ð9Þ
N2O þ N → NO þ N2
2
larger at this temperature for the catalyzed process leading to N rather
than NO. The absolute conversion increases to 5% with about 1% NO,
leading to a selectivity of NO (out of all products) of about 20%. In
Fig. 4c, this is about 14% with a 5% error, and that matches well enough.
When reaction temperature further increases from 718 °C, a decreasing
trend for the blank group and an increasing trend for the CaO group is
seen, and the NO selectivity of the blank group is 7.2%, 3.4% and 2.2%
higher, respectively, than that of the CaO group. Therefore, the presence
Fig. 5 provides the energy profiles and the geometries of Reactions
(5) to (9). The homogeneous N–O bond cleavage of N O needs
2.926 eV to generate an O radical and a N molecule, while the genera-
tion of a N radical and NO is much more demanding with 5.768 eV need-
ed (Fig. 5a).
2
2
Then the generated O radical can attack both the O end and the N
of CaO is able to reduce the NO selectivity from N
18 °C to 947 °C. For the CaO catalyzed N O decomposition, the N
products ratio decreases with the increase of temperature. Its value is
09.7 at 718 °C, 19.9 at 812 °C, 14.8 at 902 °C and the N /NO products
ratio reaches the lowest value of 12.1 at 947 °C. For the homogeneous
O decomposition, the N /NO value reaches its lowest value of 6.2 at
2
O decomposition from
end of a second N
shown in Fig. 5b. The generation of N
barrier of 1.017 eV. By comparison, the reaction between O radical and
O only needs to overcome a 0.400 eV energy barrier and generates
an ONNO complex. The generated ONNO complex needs additional
0.476 eV to detach into two NO molecules, which is the rate determin-
ing step for NO formation. Another possibility of NO formation is
shown in Fig. 5c, which is caused by the reaction of N radical with a sec-
2
O molecule following Reactions (6) and (7) as
7
2
2
/NO
2
and O needs to pass the energy
2
1
2
N
2
N
2
2
7
9
18 °C, and it gradually increases to 8.6 at 812 °C, reaches a peak of
.3 at 902 °C and decreases to 9.2 at 947 °C.
Argon is used as the balance gas instead of N
between the diluent and generated O . The generated N
composition, however may also react with the generated O
the Zeldovich mechanism through N +O→NO+N and O
2
to avoid interference
from N O de-
following
+N→
ond N
2
O molecule, with the energy barrier of 1.305 eV. Comparing the
O decomposition is determined by the bond
2
2
2
above possible routes, N
cleavage step, and the cleavage of the N–O bond is more likely than
the N–N bond as a matter of lower energy barrier. For this section, the
2
2
2
2
NO+O [42]. This reaction is not considered in the following discussion
as thermal formation of NO is not significant until temperature exceeds
energy profile of N
parison with CaO-catalyzed N
2
higher quality calculations on N O homogeneous reaction with O ( P)
based on ab initio CASPT2//CASSCF methods can be referenced else-
where [34].
2
O homogeneous decomposition is provided for com-
2
O decomposition. Further details of
3
1
9
800 K (1527 °C) [43], which is beyond the temperature range (below
47 °C) of this study. Furthermore, when using a N and O mixture as
2
2
the inlet gas (with 2:1 M ratio) from room temperature to 947 °C, NO
was not detected. This is consistent with the Zeldovich mechanism
[
42] and rules out the NO formation route from homogeneous reaction
between N and O
To investigate the effect of CaO on NO formation during the N
3.3. Mechanism of N
(1 0 0) surface
2 2 2
O decomposition into N and O on the CaO
2
2
.
2
O cat-
alytic decomposition process, the mechanism of NO formation on the
CaO (1 0 0) surface is studied in the following sections based on density
functional theory calculations.
The mechanism of N
0 0) surface is investigated and summarized in Fig. 6 for comparison
with NO formation routes. N
CaO (1 0 0) surface initiates from the O atom transfer from a N
2 2 2
O decomposition into N and O on the CaO (1
2
O decomposition into N
2
and O
2
on the
O mol-
2
3
.2. Homogeneous decomposition of N
2
O
ecule to the surface O anion site, forming surface peroxy species with
a 0.989 eV energy barrier, which is much lower than that of homoge-
2
The mechanism of N O homogeneous decomposition is first investi-
2
neous N O decomposition (2.926 eV). The effect of exchange and corre-
gated for comparison purposes. Two kinds of N-containing products
lation functionals on the energy barrier of O atom transfer step is listed
in Table S2 in supplementary materials. It is found that GGA + PW91,
GGA + BP, GGA + BOP, GGA + VWNBP, and LDA + VWN give similar
results compared to the GGA + PBE functional, while GGA + BLYP
generated from N
2
O decomposition are considered, N
2
and NO, as
formulated in Reactions (3) and (4):
and LDA
+ PWC gives relatively lower energy barriers and
2
N2O → 2N2 þ O2
N2O → 2NO þ N2
ð3Þ
ð4Þ
GGA + HCTH gives a much higher energy barrier.
Surface recovery needs to be taken into account at high surface cov-
2
erage as the atomic O from N
face O anion. The surface adsorbed atomic O from N
can be removed following the Eley–Rideal (ER) mechanism by reacting
with a second N O (Fig. 6a) or the Langmuir–Hinshelwood (LH) mech-
anism by recombination with a neighboring adsorbed atomic O
Fig. 6b). The calculated energy barriers of the ER and LH mechanisms
2
O decomposition poisons the active sur-
2
O decomposition
2 2 2
The elementary reactions of N O decomposition into N and O
2
following Reaction (3) are:
(
are 1.200 eV and 1.400 eV respectively, and both of them are higher
than that of the O atom transfer process. Therefore, whether under
N2O → N2 þ O
ð5Þ
ð6Þ
high or low surface coverage conditions, the energy barrier of N
2
O de-
N2O þ O → N2 þ O2
composition on the CaO (1 0 0) surface is much lower than the