Low temperature and atmospheric pressure CVD using polysiloxane, OMCTS, and ozone

Article abstract of DOI:10.1149/1.2085489

Silicon dioxide was deposited using an organic silicon material, OMCTS, and ozone at low temperature and atmospheric pressure. Since OMCTS in a cyclic siloxane and is thermally oxidized by ozone in this chemical vapor deposition (CVD) method, it is anticipated that high quality films will form at low temperatures. Deposition characteristics were very sensitive to base materials. However, the base material dependence on ozone concentration was less than that for the TEOS/O₃ atmospheric pressure CVD. This also suggests that the deposition reaction is rate-limited to substrate surface; therefore, step coverage was excellent and particle generation was very low. Step coverage varied from conformal to reflowed with increasing ozone concentration. There were no voids in the films deposited between narrow Al spacings even after BHF etching. Deposition rate was as high as 0.2 μm/min with high film cracking durability. Film stress was settled at as low as 1 × 10² dyn/cm². Film quality, in terms of film etching rates and film shrinkage, was also studied. This newly proposed CVD technology has yielded SiO₂ films of high quality.

Full text of DOI:10.1149/1.2085489

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-02 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).