Full text of DOI:10.1063/1.95761

Microstructure of silicon implanted with high dose oxygen ions
C. Jaussaud, J. Stoemenos, J. Margail, M. Dupuy, B. Blanchard, and M. Bruel
Citation: Applied Physics Letters 46, 1064 (1985); doi: 10.1063/1.95761
View online: http://dx.doi.org/10.1063/1.95761
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/46/11?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide
Appl. Phys. Lett. 75, 1392 (1999); 10.1063/1.124704
Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-
implanted structures
J. Appl. Phys. 82, 3730 (1997); 10.1063/1.365735
Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator
material
Appl. Phys. Lett. 71, 2136 (1997); 10.1063/1.119360
Dislocation formation related with high oxygen dose implantation on silicon
J. Appl. Phys. 69, 793 (1991); 10.1063/1.347366
Raman scattering measurement of silicononinsulator substrates formed by highdose oxygenion implantation
J. Appl. Phys. 63, 87 (1988); 10.1063/1.340467
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 193.0.65.67
On: Thu, 04 Dec 2014 08:55:54

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 193.0.65.67
On: Thu, 04 Dec 2014 08:55:54

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 193.0.65.67
On: Thu, 04 Dec 2014 08:55:54

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 193.0.65.67
On: Thu, 04 Dec 2014 08:55:54