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ChemComm
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DOI: 10.1039/C7CC01973D
COMMUNICATION
Journal Name
sufficient driving force to transfer charge from polymers to PCBM.
morphology of the films, which may explain the relatively low
Bulk heterojunction (BHJ) PSCs were fabricated in an inverted photocurrent. Therefore, the PCEs of the two polymers can be
device structure of ITO / PFN / polymer : PC61BM / MoO3 / Ag. The further enhanced by improving the film morphology.
two polymers have good solubility in chlorobenzene (CB), so
In summary, we have designed and synthesized a novel
blended polymers with PC61BM at different weight ratios in CB at electron acceptor structure, PzIIG. The introduction of pyrazine ring
1:1, 1:2 and 1:3 were tested to optimize the devices performance. in the middle of isoindigo induces intramolecular hydrogen bonding
1,8- diiodooctane (DIO) was used as the additives and the films and high molar extinction coefficient. Using the PzIIG as electron
o
were annealed at 120 C to obtain the optimal phase separation. withdrawing unit we constructed two D-A conjugated polymers:
The J–V curves and the incident photon-to-current conversion PzIIG-BDT2TC8 and PzIIG-BTT2TC10. Inverted polymer solar cell
efficiency (IPCE) curves of PzIIG-BDT2TC8 and PzIIG-BTT2TC10 devices based on PzIIG-BDT2TC8 and PzIIG-BTT2TC10 exhibited
based PSCs are displayed in Fig. 3. The PzIIG-BDT2TC8-PC61BM gave PCEs of 5.26 % and 3.36 %, respectively. It is noted that the PSCs
the best device performance based on the weight ratio at 1:2 based on PzIIG-BDT2TC8 exhibit high Voc above 1.0 V. Further
(w/w), DIO 3 % (wt.) in CB and annealing at 120 oC, which exhibited improvement in PSCs performance may include optimizing the
a PCE of 4.24 % with a Voc of 1.02 V, a Jsc of 6.68 mA / cm2, and a FF device preparation conditions through enhancing the morphology
of 62.18 %. The PzIIG-BTT2TC10-PC61BM gave the best device of active layers such as solvent vapor annealing (SVA) methods and
performance based on the weight ratio at 1:2 (w/w), DIO 3 % (wt.) selection of the additives. Design and synthesis of PzIIG containing
in CB and annealing at 120 oC, which exhibited a PCE of 2.66 % with D-A conjugated polymers with other donor units and different side
a Voc of 0.95 V, a Jsc of 4.55 mA / cm2, and a FF of 61.61 %. As chains are currently underway. Our results indicate that PzIIG is a
PC71BM possess much stronger absorbance in the visible region promising building block for constructing D-A conjugated
compare with PC61BM, PC71BM was used to fabricate PSCs device at copolymers for optoelectronic applications.
the same conditions for performance optimization.17 The PzIIG-
This work is supported by National Natural Science Foundation
BDT2TC8-PC71BM based device exhibited a PCE of 5.26 % with a Voc of China (NSFC. 51525303, 21233001, 21572086), Fundamental
of 1.01 V, a Jsc of 7.93 mA / cm2, and a FF of 65.63 %. The PzIIG- Research Funds for the Central Universities and the 111 Project.
BTT2TC10-PC71BM based device exhibited a PCE of 3.36 % with a Voc
of 0.94 V, a Jsc of 5.89 mA / cm2, and a FF of 60.78 %. In comparison, Notes and reference
Zhang has reported that IIG and BDT based D-A copolymer gave a
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PCE of 4.02 %, which has very similar molecular structure to PzIIG-
BDT2TC8.18 It suggests that using the PzIIG to construct D-A
copolymer may be an effective way to obtain high performance
PSCs. The details of PSCs performance for PzIIG-BDT2TC8 and PzIIG-
BTT2TC10 are listed in Table 1. The corresponding IPCEs of the
polymer-based solar cell devices (Fig. 3 (b) and Fig. 3 (d)) were
measured, which matched well with the results obtained from the
J–V characteristics. High Voc over 1.0 V is not easy to obtain in the
PSCs. The two polymers based PSCs devices exhibited high open
circuit voltage, which can be attributed to the deep HOMO energy
levels (-5.48 eV for PzIIG-BDT2TC8 and -5.40 eV for PzIIG-BTT2TC10)
of the polymers (Fig. S2, ESI†). The HOMO energy level of PzIIG-
BDT2TC8 is 0.08 eV lower than that of the PzIIG-BTT2TC10, which
may explain the higher Voc of the PzIIG-BDT2TC8 based PSCs device.
The hole mobilities were measured by the space charge limited
current (SCLC) method (Fig. S5, ESI†), which gave moderate hole
mobilities of 6.57x10-5 cm2 v-1 s-1 for PzIIG-BDT2TC8 and 5.92x10-5
cm2 v-1 s-1 for PzIIG-BTT2TC10.19
The thin film morphologies of the polymers blend were
characterized by tapping-mode Atomic Force Microscope (AFM) (Fig.
S6, ESI†). Both polymers blend with DIO show smaller domain size
compared with the polymers blend without DIO, which result in
improved microphase separation in the films. The root-mean-
square (RMS) roughness was 5.96 nm and 6.45 nm for the PzIIG-
BDT2TC8 blend with DIO and the PzIIG-BTT2TC10 blend with DIO,
respectively. This result suggests the PzIIG-BDT2TC8 was more
homogeneous with better phase separation compared with PzIIG-
BTT2TC10, and the morphology of the PzIIG-BDT2TC8 based film
facilitates better device performance. Although adding DIO can
effectively improve the morphology of the films, the inhomogeneity
of the films and big RMS in the AFM images indicating poor
19. G. Zhang, Y. Fu, Z. Xie and Q. Zhang, Macromolecules, 2011, 44,
1414-1420.
4 | J. Name., 2012, 00, 1-3
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