ELECTRONICALLY-DRIVEN VOLUME TRANSITION IN CeSi2 - xGax.

Article abstract of DOI:10.1016/0038-1098(84)90301-6

The pseudobinary compounds CeSi//2// minus //xGa//x were prepared, and the lattice parameters and the susceptibilities were measured. At the Si-rich end, 0 less than equivalent to x less than 0. 2, the system behaves as one with a high (approx. 200K) Kondo temperature exhibiting no magnetic order. For 0. 5 less than x less than equivalent to 1. 3, the system shows the unit-cell volume 3% larger and orders ferromagnetically around 10K. The alpha -ThSi//2 structure is retained up to x equals 1. 3, but one observes a two-phase region for 0. 2 less than equivalent to x less than equivalent to 0. 5, consisting of small- and large-volume phases.