051907-3
Suh, Tu, and Tamura
Appl. Phys. Lett. 91, 051907 ͑2007͒
FIG. 5. ͑Color online͒ ͑a͒ Histogram of angle between
¯
the ͓001͔ direction of Cu and the ͓101͔ direction of
Cu Sn , after 4 min reflow at 200 °C. ͑b͒ Histogram of
6
5
¯
angle between the ͓010͔ direction of Cu and the ͓101͔
direction of Cu Sn .
6
5
tion of Cu. The above results confirm the existence of a
strong preferred orientation relationship between Cu Sn and
Due to the strong orientation relationship between the
elongated Cu Sn and ͑001͒ Cu, as shown in Fig. 3, we ex-
6
5
6
5
͑
001͒ Cu on the bases of EBSD and synchrotron micro-x-ray
diffraction.
The dramatic change in morphology of Cu Sn suggests
pect a lower interfacial energy between them than that be-
as shown in Fig. 1. Indeed when we etched the Cu6Sn5, we
found that the elongated Cu6Sn5 on ͑001͒ has lasted much
longer in the etchant. The lower interfacial energy will im-
prove the impact fracture toughness of the interface.
6
5
that nucleation, growth, and ripening mechanisms of the
elongated Cu Sn can be different from the rounded scallop-
6
5
type Cu Sn . Figure 6 is a SEM image of Cu Sn scallops on
6
5
6
5
In summary, a dramatic change in morphology of
͑
001͒ Cu after 30 s reflow. Clearly Cu Sn already has very
6 5
Cu Sn was found when Sn-based solder was reacted with a
strong texture. The strong texture of Cu Sn indicates that
6
5
6
5
͑
001͒ single crystal Cu. Grains of Cu Sn become elongated
nucleation of the Cu Sn is not random but rather oriented
6 5
6
5
along the two low misfit directions between Cu Sn and Cu.
when ͑001͒ Cu is used as a substrate. Soldering is a reactive
6
5
The relationship between the morphology and the crystallo-
graphic orientation was verified by EBSD study. Statistical
distribution data obtained by white beam synchrotron micro-
x-ray diffraction agreed with the EBSD study. The Cu Sn
of copper substrate takes place at the interface. If the ori-
entation of substrate copper is a high-index ͑hkl͒ plane, more
copper will be required to be dissolved away in order to
expose the low misfit ͗110͘ crystal directions and ͕001͖
planes of Cu. Therefore, the nucleation of Cu Sn will not
6
5
already showed strong texture at 30 s of wetting reaction,
indicating that the grains tend to nucleate with texture.
6
5
have enough time to nucleate with the preferred orientation if
the Cu substrate is a high-index plane, and random nucle-
ation will become dominant. However, if the substrate is a
This study was performed at UCLA, supported by SRC
under Contract No. NJ-1080 and NSF under Project No.
0
503726. The Advanced Light Source is supported by the
͑
001͒ single crystal Cu, Cu Sn can directly nucleate on the
6 5
Director, Office of Science, Office of Basic Energy Sciences,
of the U.S. Department of Energy under Contract No.
DE-AC02-05CH11231.
low misfit direction and plane. As a result, Cu Sn grains
6
5
will have an oriented nucleation and textured growth.
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FIG. 6. ͑Color online͒ SEM image of Cu Sn grains on ͑001͒ Cu, after 30 s
6
5
reflow.