310
H. Fujiwara et al. / Journal of Alloys and Compounds 391(2005) 307–312
17 W5Si3 (s) + Si (s) = 5 WSi2 (s)
(13)
Because the activity of silicon, aSi, at the reference elec-
trode is unity, the EMF values, E(1) and E(2), are given as:
7
respectively. Then, the standard free energy of formation for
W5Si3, ꢀG0(W5Si3), and that for WSi2, ꢀG0(WSi2), can be
related to the activity of silicon at points C and B respectively
by the following equations:
ꢀ
ꢁ
RT
E(1) = −
ln aCSi
ln aBSi
(8)
(9)
4F
ꢀ
ꢁ
RT
ꢀ
ꢁ
E(1) = −
4F
13 ꢀG0(W5Si3) + RT ln
= 0
(14)
1
aCSi
The superscript in aSi, denotes the region of the three-phase
equilibria in Fig. 1. Then, silicon activities at these three-
phase equilibria are obtained as functions of temperature
within the experimental temperature range (1300–1500 K):
ꢀ
ꢁ
57 ꢀG0(WSi2) − ꢀG0(W5Si3) + RT ln
= 0 (15)
1
7
1
aBSi
Combining the Nernst’s equation and Eqs. (8) and (9), Eqs.
(14) and (15) are rewritten as:
log aCSi = −0.230 − 2240 (T (K))−1 0.0056
log aBSi = +0.452 − 2715 (T (K))−1 0.0036
By using these equations, the upper and lower limits of
(log aSi) for W5Si3 stability at 1373 K were calculated to be
−1.525 and −1.861, respectively. As shown in Fig. 2, this
range is relatively small as compared to that calculated from
the literature data [11].
(10)
(16)
(17)
ꢀG0(WSi2) = −12 FE(1)
−
28 FE(2)
5
5
Thus, the standard free energies of formation for the silicides
are given as functions of temperature:
ꢀG0(W5Si3) (kJ mol−1
= −128.6 − 0.0132 (T (K)) 0.42
)
The three-phase mixture of Si, SiO2 and WSi2 was used at
first as the reference electrode. However, it was occasionally
observed that the EMF values for the cells (1) and (2) became
lower after several hours of use. On the other hand, no de-
crease in EMF was observed for the cell (3) in which silicon
activities for both of the electrodes were lower than unity.
These facts indicate that the “life time” of the reference elec-
trode was not long enough. This phenomena did not seem re-
producible, but depended on the thermal history and the setup
of the electrolyte, electrode and lead wire. Replacement of
WSi2 with NbSi2 was not effective to resolve this problem. It
wasassessedthatthisphenomenonwascausedbyirreversible
local reactions between molybdenum lead wire, pure silicon
and electrolyte. Thus, in order to separate molybdenum lead
wire from electrolyte in high silicon activity region, silver al-
loy saturated with silicon put into SiO2 tube was used as the
reference electrode as shown in Fig. 3. The modified refer-
ence electrode allowed satisfactory EMF measurements for
more than 48 h. For the cells (1) and (2), the initial data ob-
tained by using solid silicides in reference electrode are also
plotted in Fig. 4. These results agree with that obtained by
modified reference electrode.
(18)
ꢀG0(WSi2) (kJ mol−1) = −98.5 + 0.0095 (T (K)) 0.15
(19)
In calculation of the standard free energy of formation, solid
solubilities in the terminal phases and non-stoichiometry of
W and Si phases are negligibly small [10] and there are no re-
ports on those in silicide phases, the effect of oxygen addition
to the W–Si binary system is not considered. Kocherzhinskii
et al. [15] reported Si solubility in W phase as 2.35 at.% Si
at 2273 K and 0.97 at.% Si at 1823 K and homogeneity range
information for the range 1300–1500 K is not available. In
addition, there are no reports which show a possibility of
non-stoichiometric WSi2 and solid solution of Si phase. Ac-
cordingly, the accuracies in Eqs. (18) and (19) were estimated
from the experimental errors in EMF measurements of the
cells (1) and (2), ignoring the presence of the solid solution
of terminal phases and non-stoichiometry of the silicides.
Fig. 5 shows the temperature dependence of ꢀG0(W5Si3)
and ꢀG0(WSi2) together with the literature data. Chart [1]
reported ꢀG0(W5Si3) and ꢀG0(WSi2) at 1500 K and sum-
marized the results in a set of data: the standard enthalpies
and entropies of formation at 298 K and heat capacity for
the silicides. The accuracies of ꢀG0(W5Si3) and ꢀG0(WSi2)
calculatedusingtheresultswerereportedtobe24and9 kJ, re-
spectively. Kematick [2] reported the values of ꢀG0(W5Si3)
and ꢀG0(WSi2) at 2073 K based on the experimental results
obtained at the temperature above the melting point of sili-
con. The lines in this figure were calculated from the temper-
ature dependence of the vapor pressure originally reported
in these publications. The present results agree well with the
As plotted in the isothermal section in Fig. 1, the over-
all composition of the electrode was occasionally changed;
however, no difference in the results was observed. The X-ray
diffraction analysis of the used electrode showed the presence
of the solid phases corresponding to each three-phase equi-
librium.
3.2. Standard free energy of formation for silicide
The overall cell reactions for the cells (1) and (2) are given
as:
53 W (s) + Si (s) = 1 W5Si3 (s)
(12)
3