
Journal of Chemical Physics p. 2400 - 2407 (1986)
Update date:2022-08-11
Topics:
Selamoglu, N.
Rossi, M.J.
Golden, D.M.
The reaction between CF3 radicals and silicon oxide (fused silica) surface was studied in a VLPΦ flow reactor (ca. 0.1-3 mTorr) as functions of surface temperature (32-530 K) and CF3 concentration.The CF3 radicals were generated from CF3I by CO2 laser photolysis, and the subsequent gas-phase reaction products were followed by mass spectroscopy.The surface reaction was found to yield CO, HF, CO2, COF2, and SiF4.It was found that H2O residing on the silicon oxide surface was largely responsible for the oxygen- and hydrogen-containing products, and that little etching of the SiOz itself occurred under these conditions.The rates for the irreversible surface loss of CF3, and for the formation of CO were both first order with respect to
zhuzhou zhongle chemical co. ltd.
Contact:+86-0731 28228409
Address:Zhuzhou, Hunan, China
Hangzhou Yanshan Chemical Co.,Ltd.
Contact:86-571- 87698076
Address:Room 1001, #1 Building, Zhongtian MCC, No.2 Youzhinong, Wenyi West Road, Xihu District, Hangzhou, China
Contact:+86-535-8888888
Address:No.161 Haishi Rd.
Daqing E-shine Chemical Co.,LTD
Contact:0086-024-31285112
Address:Hongweiyuan area, Ranghulu district
Contact:+86-21-56338808
Address:799 Dunhuang Road, Putuo
Doi:10.1080/10426509608545208
(1996)Doi:10.1142/S1088424618501146
(2019)Doi:10.1055/s-2004-817783
(2004)Doi:10.1016/j.chempr.2020.04.008
(2020)Doi:10.1039/a802723d
(1998)Doi:10.1002/zaac.202000013
(2020)