
Journal of Catalysis p. 405 - 413 (1999)
Update date:2022-08-16
Topics:
Nakagawa, Kiyoharu
Ikenaga, Naoki
Teng, Yonghong
Kobayashi, Tetsuhiko
Suzuki, Toshimitsu
The mechanisms of the partial oxidation of methane to synthesis gas were investigated using a pulsed gas reaction technique and temperature jump measurement. Catalyst bed temperatures were directly measured by introducing a pulse mixture of methane and O2 (2:1). Synthesis gas production proceeded via a two-step reaction pathway, consisting of highly exothermic methane complete oxidation to give H2O and CO2, followed by the endothermic reforming of methane with H2O and CO2 over Ir/TiO2 catalyst. With Ir/TiO2 catalyst, a sudden temperature increase at the front edge of the catalyst bed was observed upon introduction of the pulse, but the temperature of the rear end of the catalyst bed increased only slightly. With Rh/TiO2 and Rh/Al2O3 catalysts, a different pathway for synthesis gas formation can be proposed. Rh/TiO2 and Rh/Al2O3 catalysts exhibited high catalytic activity in the decomposition of CH4 to give hydrogen and deposited carbon or CHx, even in the presence of oxygen. The temperature at the front edge of the catalyst bed decreased upon introduction of a CH4/O2 pulse, and increased temperature at the rear. This indicated that H2 formation and carbon deposition occurred via decomposition of CH4, and then deposited carbon or CHx generated on the Rh surface was oxidized into COx. However, on Rh/SiO2, synthesis gas was produced via a two-step path similar to the case of Ir/TiO2 catalyst. The reaction pathway with Rh-loaded catalysts depended on the support materials.
View More
Shanghai Harvest Chemical Ind. Co., Ltd.
Contact:021-51385350
Address:ROOM 806-807, AI LI CHEN BUILDING, No.333 JINGXIANG ROAD, PUDONG DISTRICT, 201206, SHANGHAI
SEA BRGIHT INDUSTRY CO.,LIMITED
Contact:0086 755 8622 3990
Address:Rm 17B3,GuangCaiXinTianDi Bldg,GuiMiao Rd,NanShan District,Shenzhen,China
Jiaozuo Zhongwen Trading Coporation Limited
Contact:--
Address:East Renmin Road
Hangzhou Showland Technology Co., Ltd.
Contact:86-571-88920516
Address:ROOM2118,NO.553,WENSAN ROAD,HANGZHOU,CHINA
Geen Chemical Technology Co., Ltd
Contact:86-769-21660847
Address:1408, Yingfeng Commercial Center, Nancheng District
Doi:10.1016/S0040-4039(01)85843-3
(1978)Doi:10.1039/c7cc03486e
(2017)Doi:10.1016/S0040-4039(00)72885-1
(1968)Doi:10.1021/acs.joc.6b02374
(2017)Doi:10.1021/ja00012a027
(1991)Doi:10.1021/ja01567a027
(1957)