Photophysical measurements
cleaned ultrasonically—sequentially with acetone, methanol, and
deionized water—and then it was treated with UV-ozone. A
hole-injection layer of poly(3,4-ethylenedioxythiophene)-poly(4-
styrenesulfonate) (PEDOT:PSS) was spin-coated onto the
Steady state spectroscopic measurements were conducted both in
solution and solid films prepared by vacuum (2 ꢂ 10ꢀ torr)
deposition on a quartz plate (1.6 ꢂ 1.0 cm). Absorption spectra
were recorded with a U2800A spectrophotometer (Hitachi).
Fluorescence spectra at 300 K and phosphorescent spectra at 77
K were measured on a Hitachi F-4500 spectrophotometer upon
exciting at the absorption maxima. Quantum efficiency
measurements were recorded with an integration sphere coupled
with a photonic multi-channel analyzer (Hamamatsu C9920),
which gave anthracene a quantum yield of 23%. The experi-
mental values of HOMO levels were determined with a Riken
AC-2 photoemission spectrometer (PES), and those of LUMO
levels were estimated by subtracting the optical energy gap from
the measured HOMO.
6
ꢁ
substrates and dried at 130 C for 30 min to remove residual
water. Organic layers were then vacuum deposited at a deposi-
ꢀ1
ꢁ
tion rate of ca. 1–2 A s . Subsequently, LiF was deposited at 0.1
ꢁ
ꢀ1
ꢁ
ꢀ1
A s and then capped with Al (ca. 5 A s ) through shadow
masking without breaking the vacuum. The I–V–L characteris-
tics of the devices were measured simultaneously using a Keithley
6
430 source meter and a Keithley 6487 picoammeter equipped
with a calibration Si-photodiode in a glovebox system. EL
spectra were measured using a photodiode array (Ocean Optics
S2000) with a spectral range from 200 to 850 nm and a resolution
of 2 nm.
Cyclic voltammetry
Acknowledgements
The oxidation potential was determined by cyclic voltammetry
This study was supported financially by the National Science
Council and the Ministry of Economic Affairs of Taiwan.
(
CV) in CH Cl solution (1.0 mM) containing 0.1 M tetra-n-
2 2
6
butylammonium hexafluorophosphate (TBAPF ) as a support-
ꢀ1
ing electrolyte at a scan rate of 100 mV s . The reduction
potential was recorded in THF solution (1.0 mM) containing 0.1
References
4
M tetra-n-butylammonium perchlorate (TBAClO ) as a sup-
1
(a) C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett., 1987, 51, 913;
b) M. A. Baldo, M. E. Thompson and S. R. Forrest, Nature, 2000,
403, 750.
(a) Y.-H. Kim, H.-C. Jeong, S.-H. Kim, K. Yang and S.-K. Kwon,
Adv. Funct. Mater., 2005, 15, 1799; (b) Y.-H. Niu, B. Chen, T.-
D. Kim, M. S. Liu and A. K.-Y. Jen, Appl. Phys. Lett., 2004, 85,
ꢀ1
porting electrolyte at a scan rate of 100 mV s . A glassy carbon
electrode and a platinum wire were used as the working and
counter electrodes, respectively. All potentials were recorded
versus Ag/AgCl (saturated) as a reference electrode.
(
2
5
433; (c) Z. Q. Gao, Z. H. Li, P. F. Xia, M. S. Wong, K. W. Cheah
and C. H. Chen, Adv. Funct. Mater., 2007, 17, 3194; (d) S. Tang,
M. R. Liu, P. Lu, H. Xia, M. Li, Z. Q. Xie, F. Z. Shen, C. Gu,
H. P. Wang, B. Yang and Y. Ma, Adv. Funct. Mater., 2007, 17,
Time-of-flight (TOF) mobility measurements
Carrier-transport properties were studied in vapor-deposited
2
869; (e) T.-C. Tsai, W.-Y. Hung, L.-C. Chi, K.-T. Wong,
glasses of CPhBzIm by the time-of-flight (TOF) transient
C.-C. Hsieh and P.-T. Chou, Org. Electron., 2009, 10, 158; (f)
C.-H. Chien, C.-K. Chen, F.-M. Hsu, C.-F. Shu, P.-T. Chou and
C.-H. Lai, Adv. Funct. Mater., 2009, 19, 560.
20
photocurrent technique. The samples for the TOF measure-
ment were prepared by vacuum deposition using the structure:
ITO glass/CPhBzIm (1.56 mm)/Al (150 nm), and then placed
inside a cryostat and kept under vacuum. The thickness of
organic film was monitored in situ with a quartz crystal sensor
and calibrated by a thin film thickness measurement (K-MAC
ST2000). A pulsed nitrogen laser was used as the excitation light
source through the transparent electrode (ITO) induced photo-
generation of a thin sheet of excess carriers. Under an applied dc
bias, the transient photocurrent was swept across the bulk of the
organic film toward the collection electrode (Al), and then
recorded with a digital storage oscilloscope. Depending on the
polarity of the applied bias, selected carriers (holes or electrons)
3
(a) Y. Sun, N. C. Giebink, H. Kanno, B. Ma, M. E. Thompson and
S. R. Forrest, Nature, 2006, 440, 908; (b) G. Schwartz, M. Pfeiffer,
S. Reineke, K. Walzer and K. Leo, Adv. Mater., 2007, 19, 3672; (c)
H. Kanno, N. C. Giebink, Y. Sun and S. R. Forrest, Appl. Phys.
Lett., 2006, 89, 023503; (d) J. H. Seo, J. H. Park, Y. K. Kim,
J. H. Kim, G. W. Hyung, K. H. Lee and S. S. Yoon, Appl. Phys.
Lett., 2007, 90, 203507; (e) B.-P. Yan, C. C. C. Cheung,
S. C. F. Kui, H.-F. Xiang, V. A. L. Roy, S.-J. Xu and C.-M. Che,
Adv. Mater., 2007, 19, 3599; (f) Y. H. Lee, B.-K. Ju, W. S. Jeon,
J. H. Kwon, O. O. Park, J.-W. Yu and B. D. Chin, Synth. Met.,
2
009, 159, 325.
4 (a) P. Anzenbacher, Jr., V. A. Montes and S. Takizawa, Appl. Phys.
Lett., 2008, 93, 163302; (b) Y. Tao, Q. Wang, Y. Shang, C. Yang,
L. Ao, J. Qin, D. Ma and Z. Shuai, Chem. Commun., 2009, 77.
5
(a) H. Kanno, R. J. Holmes, Y. Sun, S. Kena-Cohen and
S. R. Forrest, Adv. Mater., 2006, 18, 339; (b) F. Guo and D. Ma,
Appl. Phys. Lett., 2005, 87, 173510; (c) C.-C. Chang, J.-F. Chen, S.-
W. Hwang and C. H. Chen, Appl. Phys. Lett., 2005, 87, 253501.
(a) Y.-S. Park, J.-W. Kang, D. M. Kang, J.-W. Park, Y.-H. Kim, S.-
K. Kwon and J.-J. Kim, Adv. Mater., 2008, 20, 1957; (b) C.-H. Chang,
K.-C. Tien, C.-C. Chen, M.-S. Lin, H.-C. Cheng, S.-H. Liu, C.-
C. Wu, J.-Y. Hung, Y.-C. Chiu and Y. Chi, Org. Electron., 2010,
T
are swept across the sample with a transit time of t . With the
applied bias V and the sample thickness D, the applied electric
field E is V/D, and the carrier mobility is then given by m ¼
6
2
D/(t
T
E) ¼ D /(Vt
T T
), in which the carrier transit time, t , can be
extracted from the intersection point of two asymptotes to the
plateau and the tail sections in double-logarithmic plots.
1
1, 412.
7
8
(a) J. Lee, J.-I. Lee, J. Y. Lee and H. Y. Chu, Appl. Phys. Lett., 2009,
94, 193305; (b) Y.-H. Niu, M. S. Liu, J.-W. Ka, J. Bardeker,
M. T. Zin, R. Schofield, Y. Chi and A. K.-Y. Jen, Adv. Mater.,
2007, 19, 300; (c) X. Yang, Z. Wang, S. Madakuni, J. Li and
G. E. Jabbour, Adv. Mater., 2008, 20, 2405.
(a) K. R. J. Thomas, J. T. Lin, Y. T. Tao and C. W. Ko, J. Am. Chem.
Soc., 2001, 123, 9404; (b) K. R. J. Thomas, J. T. Lin, Y. T. Tao and
C. W. Ko, Adv. Mater., 2000, 12, 1949.
OLED device fabrications
All chemicals were purified through vacuum sublimation prior to
use. The OLEDs were fabricated through vacuum deposition of
ꢀ6
the materials at 10 torr onto ITO-coated glass substrates
ꢀ1
having a sheet resistance of 15 U sqr . The ITO surface was
1
0118 | J. Mater. Chem., 2010, 20, 10113–10119
This journal is ª The Royal Society of Chemistry 2010