.
Angewandte
Communications
Table 1: Relationship between PEC performance and dual porosity.
in an increased rate of surface recombination,
effective suppression on bulk recombination con-
Sample D1 [nm] D2 [nm] J @ 0.4 V/ J @ 1.2 V/ Rct [W] Photoelectron life-
mAcmÀ2 [a] mAcmÀ2 [a]
time @ 0.6 V/s[b]
tributes more to the enhanced charge migration and
hence PEC performance.[14] On the other hand,
S-200
M-200
l-200
S-1000
M-1000
l-1000
180
170
155
850
780
710
35Æ5
85Æ5
0.38
0.30
105Æ5 0.29
105Æ5 0.25
150Æ5 0.22
560Æ5 0.13
1.35
0.84
0.64
0.80
0.65
0.55
268.7
350.0
762.3
1187
1621
2815
2.01
1.82
1.62
1.70
1.54
1.31
under illumination, the steady-state charge-carrier
concentrations at the junction set the position of the
quasi-Fermi levels, which in turn determines Voc.
Conversely, under transient conditions when the
illumination is stopped, more inner defects and
boundaries become preferable sites where electrons
[a] The voltage is referenced to Ag/AgCl. [b] The voltage is referenced to RHE.
and holes are easy to recombine.[15] As such, a faster
Voc decay would be observed immediately after the
of the photocurrent densities on various samples allows us to
make the following two observations. 1) All the photoelectr-
odes achieve much higher photocurrent density over unor-
dered porous film (only 0.3 mAcmÀ2 at 1.2 V vs. Ag/AgCl;
Figure S11). This result implies that periodically ordered
macroporous skeleton is indeed advantageous as a photo-
electrode. 2) Carefully analyzing the curves of samples from
templates with PS spheres of the same diameter, we find that
the enhancement under a higher voltage bias is more
pronounced with shorter post-heating times. It is established
that bulk charge recombination is the main limiting factor
with the increased bias.[8a,11] Therefore, this apparent en-
hancement suggests that a smaller D2 is beneficial for
suppressing charge recombination, and hence easier charge
migration.
In essence, the hypothesis we want to verify is that the
existence of smaller D2 within the BiVO4 periodically
ordered porous architectures can facilitate charge migration.
At least two types of measurements can be conducted to study
the effects of D2. The first one is based on the assumption that
the interface charge transfer kinetics can be measured by
electrochemical impedance spectroscopy (EIS). As presented
in Figure S9b and S10b, the Nyquist plots consist of one
dominant semicircle, whose diameter is related to charge
transfer resistance at BiVO4/electrolyte interface.[12] Compar-
ing samples with identical D1 but different D2, samples with
smaller D2 lead to a smaller diameter of the semicircle. To
further understand the details, we interpret the plots in terms
of the equivalent circuit using the Randles–Ershler model
displayed in the inset of Figure S9b and S10b, where Rct
represents the charge transfer resistance across the interface.
As listed in Table 1, the fitted values of Rct clearly show that
the interface charge transfer in samples of smaller D2 is much
easier.
removal of illumination. With the help of the methodology by
Bisquert et al.,[16] we find that the Voc decay in L-DPS is faster
than in S-DPS (insets of Figure S9c, S10c). Furthermore, the
Voc decay rate is related to the photoelectron lifetime.[16b] With
shortened post-heating time (Table 1), the photoelectron
lifetime is correspondingly prolonged (Section S3, see Sup-
porting Information). Slower decay kinetics and longer
photoelectron lifetime are indicative of less charge trapping
when illuminated, hence, more effective charge separation for
water splitting.[15]
Meanwhile, when comparing the PEC performance of L-
200 and S-1000 which have similar D2 values, the tendency of
enhanced photocurrent density with increased D1 is very
different under low and high bias voltages. As for L-200,
a slightly higher photocurrent at the lower bias indicates that
smaller D1 enables suppression of surface recombination and
easy interface charge transfer, which is evidenced by smaller
Rct. The S-1000 sample exhibits a higher photocurrent density
at the higher bias. This observation together with higher
photoelectron lifetime verifies that increased D1 benefits the
elimination of bulk charge recombination.
As seen from above characterizations, the BiVO4 periodi-
cally ordered macroporous structures with different dual
porosity offer multiple effects. Specifically, smaller D2 is
helpful for charge migration both in bulk and on surface,
while smaller D1 facilitates surface charge migration, but
impedes bulk charge migration. They can be further ration-
alized: 1) A more compact space occupation of samples with
smaller D1 and D2 results in larger electrode/electrolyte
junction area, which ensures higher electrode/electrolyte area
and more active sites to reduce resistance at interface/charge
transfer resistance and open circuit voltage. It can be expected
that there are more holes capable of surviving the recombi-
nation and then reaching the electrode/electrolyte interface
for further utilization. Accordingly, more electrons can be
collected by the current collector. 2) With respect to samples
with smaller D2 and larger D1, the thickness of the wall
increases, leading to more interfacial contact between elec-
trode materials and the current collector. So the contact
resistance can be minimized and charge transfer at the
electrode/current collector interface is facilitated.[4a] 3) It can
be imagined that the thin wall formed within the interstitial
spaces generated by smaller PS spheres is much more fragile
during the calcination process. With D1 being constant,
a more compact packing or smaller grain size of BiVO4 grains
in the interstitial space can be achieved by introducing
a smaller D2. The opposite situation occurs while keeping D2
The second technique to appreciate the advantages of
smaller D2 relies on how it affects bulk charge migration
behavior. Shown in Figure S9c and S10c is the open circuit
voltage decay among the samples with different D2 values.
On one hand, the observation of the slightly negative shift of
the open circuit voltage (Voc) with less post-heating time
indicates that the D2 size has an important impact on the
process occurring at the interface, that is, a smaller D2 means
larger junction area.[13] If the flux of photo-generated charges
is instead distributed uniformly over a much larger junction
area, the bulk recombination limit would be reduced,
associated with improved surface reactions and hole interface
transfer. Although increased junction area would also result
8582
ꢀ 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Angew. Chem. Int. Ed. 2013, 52, 8579 –8583