S.K. Meher et al. / Electrochimica Acta 55 (2010) 8388–8396
8395
resistance of the active NiO material, and (iii) diffusive as well as
contact resistance at the active material/current collector interface.
The experimental impedance data are also converted to specific
capacitance (Cs) using the following equation [19]:
1
Cs =
2ꢆfZꢀꢀ
the scan rate dependent current density observed in the cyclic
voltammograms in Fig. 6. Further the specific capacitance calcu-
lated from impedance measurements at different biased potentials
(Fig. 12) is also in agreement with the results obtained from the
cyclic voltammetry measurements in Fig. 7.
4. Conclusions
A simple hydrothermal technique using homogeneous pre-
cipitation method has been employed to synthesize NiO with
nanoporous pine-cone morphology. The NiO samples have the
surface area of 265 m2 g−1, pore volume of 0.269 cm3 g−1 and aver-
age pore diameter of 4.19 nm. The pore size distribution analysis
shows that the material contains both meso- and macro-porosities.
The pore size distribution is quite narrow (∼3.6 nm) which falls
in the specified range of pore size [16] suitable for efficient
faradaic reactions. The electrochemical studies on this material
show good capacitance value (337 F g−1) attributed to its porous
surface of pine-cone morphology which acts as an “ion buffering
reservoir” to facilitate OH–ion mobility. The specific capacitance
values obtained from cyclic voltammetry, chronopotentiometry
and potential dependent impedance spectroscopy measurements
are in good agreement with each other.
Fig. 12. The specific capacitance calculated from impedance spectra as a function
of frequency at different bias potentials.
ent biased potentials is shown in the Fig. 11. The EIS spectra can be
evaluated through a simple circuit model, proposed by Hu et al. [28]
and is shown in the inset of Fig. 10. The partial semicircle at high
frequency region (shown as an inset in Fig. 11) is characteristic of
the processes occurring at the oxide–electrolyte interface. This can
be modeled as a double-layer capacitor Cd in parallel with an ionic
charge-transfer resistor, Rict. The Rict is a resistance due to different
conductivity in the solid oxide (electronic conductivity) and the
aqueous electrolyte phase (ionic conductivity). So, the resistance
is due to some discontinuity in the charge-transfer process at the
solid oxide/liquid electrolyte interface. Here, the resistance is inde-
pendent of applied biased potential due to steady electronic and
ionic conductivity of the solid oxide and liquid electrolyte, respec-
tively. The partial kinetic semicircles at medium frequency regions
correspond to the charge-transfer resistance due to faradaic redox
processes in the system involving the exchange of OH−. This is asso-
ciated with the surface phenomena of the porous NiO electrode.
This impedance characteristic can be modeled as a film impedance
due to the faradaic redox processes involving electron hopping in
the NiO particle and OH− ion diffusion. This is assumed to be con-
sisting of a film capacitor, Cf in parallel with an electron-transfer
resistor, Rect and is dependent upon the applied biased potentials.
With increase in biased potential, there is a decrease in impedance
due to the increase in OH− ion diffusion, thereby increasing the
feasibility of electron transfer. The linear part at lower frequen-
cies corresponds to the Warburg impedance, W, which is described
as a diffusive resistance of the OH− ion within the NiO electrode
pores. At a biased potential of 0.5 mV, the Nyquist plot of NiO
displays a nearly vertical line along the imaginary axis at lower fre-
quencies. When the dc potential is reduced to 0.3 mV and 0.1 mV,
a considerable deviation from near 90◦ slopes is observed at the
low-frequency region. This deviation along the imaginary axis is
ascribed to the pseudocapacitance, Cs, due to facile and reversible
faradaic redox reactions at the electrode–electrolyte interface and
an easy access of the OH− ions with the electro-active porous NiO
electrode under such low frequencies. The zero slope at higher
voltage is attributed to the effect of high operation voltages on
the supercapacitive behavior and more pronounced surface redox
reactions at electrode/electrolyte interface. For all biased potentials
at higher frequencies, the intercept at real part (Zꢀ) is 0.16 ꢅ. This
constant value is due to the identical combination of (i) ionic and
Acknowledgment
We thank the Ministry of New and Renewable Energy (MNRE),
New Delhi, for financial support through grant no. 102/28/2006-NT.
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