INCORPORATION OF Tl IN MONOCRYSTALLINE n-PbS.

Article abstract of DOI:10.1002/pssa.2210950226

The incorporation of Tl in monocrystalline n-PbS was studied on PbS annealed under various Tl vapor pressures and on vapor-grown PbS:Tl//2S crystals by measuring the surface concentration and in-depth distribution of thallium as well as the lattice parameter and carrier concentration. The Tl in annealed samples increases and the lattice parameter diminishes proportionally to the Tl vapor pressure. The penetration plots of Tl in PbS at 650 degree C in the concentration range up to 1 at% follow an erfc law. A model explaining the anomalous behavior of the lattice parameter and high self-compensation in PbS:Tl is proposed.