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Journal of Materials Chemistry A
SEM and AFM. As for the sample of TS1.5 (Fig. 1f), the two layers
of ultrathin nanosheets with transparent and smooth features
are closely packed and form obvious grain boundaries between
the nanosheets. This indicates that the ultrathin CdS nano-
sheets are uniformly adhered to the surface of Ti3C2Tx, sug-
gesting the formation of an ultrathin 2D/2D heterojunction
structure. Furthermore, the HR-STEM image in Fig. 1g exhibits
the clear contact interface between CdS and Ti3C2Tx nano-
sheets. The lattice fringes with a width of 0.22 nm could be
attributed to the crystal (0012) plane of Ti3C2Tx.35 The (111)
crystal plane of CdS with a lattice spacing of 0.34 nm is also
observed.21,36 Notably, the close interfacial contact in the TS1.5
sample is benecial for the interfacial charge transfer between
CdS and Ti3C2Tx nanosheets. The aberration-corrected STEM
images of Bi2MoO6 and TM1.5 in Fig. S7a and b (ESI†) show that
the ultrathin 2D Bi2MoO6 nanosheets are closely adhered on
Ti3C2Tx nanosheets, forming an ultrathin 2D/2D Ti3C2Tx/
Bi2MoO6 heterojunction with a clear interface region. The
lattice spacings of 0.274 nm and 0.275 nm match well with the
(200) and (002) planes of the Bi2MoO6 sample while the Ti3C2Tx
nanosheet exposes the (0012) crystal plane with a lattice spacing
of 0.22 nm (Fig. S7c, ESI†).37,38 These results indicate that
semiconductor nanosheets are successfully formed on Ti3C2Tx
nanosheets with intimate interfacial contact, featuring an
ultrathin 2D/2D heterojunction structure.
The structure and crystal phase of these samples were
characterized by powder X-ray diffraction (XRD). The precursor
Ti3AlC2 shows a strong (002) diffraction peak at 9.7ꢁ, as shown
in Fig. S8a (ESI†). Compared to Ti3AlC2, the (002) peak of
Ti3C2Tx is broader and shis toward a lower angle, indicating
the ultrathin layer structure.38 The XRD results in Fig. S8b (ESI†)
show that the characteristic diffraction peaks of TSx composites
are located at 25.3ꢁ, 26.5ꢁ, 28.6ꢁ, 36.9ꢁ, 43.3ꢁ, 48.2ꢁ, and 52.1ꢁ,
which is attributed to the hexagonal wurtzite-structure of CdS
with exposed (100), (002), (101), (102), (110), (103), and (112)
crystal planes, respectively.21,39 However, the signals of Ti3C2Tx
are absent in the spectra, which could be attributed to the low
addition amount of Ti3C2Tx. Signicantly, with the increase of
the Ti3C2Tx content in TSx composites, all the hybrid materials
show reduced peak intensities and broader peaks compared to
pure CdS. This can be explained by the inhibited growth of CdS
nanosheets in the Ti3C2Tx support, which leads to the smaller
grain size and thinner thickness, and then the lower and
broader XRD peaks. Similar results are also observed for the
TMx composites (Fig. S8c, ESI†).40
Fig. 2 (a) Raman spectra of TS1.5 and CdS; (b) Raman spectra of TM1.5
and Bi2MoO6; high-resolution XPS spectra of the core levels of Cd 3d
(c), S 2p (d) over the CdS and TS20 samples and Bi 3f (e) and Mo 3d (f)
over the Bi2MoO6 and TM1.5 samples.
absorption properties of Ti3C2Tx/semiconductors were investi-
gated by UV-vis diffuse reectance spectroscopy (DRS). As
illustrated in Fig. S9 (ESI†), the light absorption ngerprints of
TSx and TMx composites are analogous with those of pure CdS
and Bi2MoO6, corresponding to the inherent band gap
absorption of CdS and Bi2MoO6, respectively. Moreover, with
the increase of the addition amount of Ti3C2Tx, the absorption
edges of the composites remain constant, suggesting the
unchanged band gap of these samples. Notably, with the
introduction of small amounts of Ti3C2Tx, the visible light
absorption intensities of all TSx and TMx samples are
enhanced, which is attributed to the full spectrum absorption of
black Ti3C2Tx. This is further conrmed by the darker color of
the samples (Fig. S9, ESI†).
X-ray photoelectron spectroscopy (XPS) was used to explore
the electron density of Ti3C2Tix/semiconductor composites.
Similar survey spectra for CdS and TS1.5 are observed in
Fig. S10† (ESI). Notably, due to the low addition amount of
Ti3C2Tx (1.5%) and compact encapsulation of Ti3C2Tx with CdS
nanosheets, which shields the Ti signal, the elements belonging
to Ti3C2Tx in the TS1.5 composite cannot be observed obviously.
Therefore, the TS20 sample with a high content (20%) of
Ti3C2Tx was prepared for XPS analysis. Fig. 2c shows that the Cd
3d core levels of CdS are tted with two components located at
404.3 and 411.0 eV, which are assigned to Cd 3d5/2 and Cd 3d3/2
bonds, respectively. Interestingly, in the TS20 sample, these
Raman spectroscopy was further employed to elucidate the
structural complexity of these materials and illustrate the
interaction behaviour between semiconductors and Ti3C2Tx. As
shown in Fig. 2a, the two main peaks located at 302 and
601 cmꢀ1 are attributed to the longitudinal optical (LO) mode
and the overtones of CdS, respectively.21 Notably, a shi of the
Raman peak towards a lower wavenumber for the TS1.5
composite is observed, which suggests a strong interaction
between Ti3C2Tx and CdS. Similarly, the Raman peaks of TM1.5
shi to a lower wavenumber compared to those of their pure
species, which proves the existence of strong interaction in
Ti3C2Tx/Bi2MoO6 heterostructures (Fig. 2b).41 The photo-
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J. Mater. Chem. A