
Zeitschrift fur Anorganische und Allgemeine Chemie p. 929 - 936 (1997)
Update date:2022-08-11
Topics:
Curda, Jan
Carrillo-Cabrera, Wilder
Schmeding, André
Peters, Karl
Somer, Mehmet
Von Schnering, Hans Georg
Ba3Ge4C2 is formed at 1530 K from the elements or by reaction of BaC2 with BaGe2 (corundum crucible; steel ampoule). The compound is a semiconductor (grey colour; Eg = 1.1 eV), brittle, very sensitive to moisture, and reacts with NH4Cl at about 400 K forming acetylene and germanes up to Ge4Hn. The new Ba3Ge4C2 structure type (space group I4/mcm, No. 140; a = 8.840(1) ?, c = 12.466(1) ?; Z = 4, Pearson code tI36), contains two kinds of isolated polyanions, namely tetrahedro-tetragermanide [Ge4]4- and acetylenide [C2]2- anions. The bond lengths are d(Ge-Ge) = 2.517 ? (4x) and 2.641 ? (2x), and d(C≡C) = 1.20 ?. The Ba3[Ge4][C2] structure is a hierarchical derivative of the perovskite (CaTiO3) generated by a partial atom/cluster replacement ([Ge4] for Ca, [C2] for Ti and Ba for O). The Raman spectrum shows bands at 168, 199 and 280 cm-1, and at 1796 cm-1 characteristic for [Ge4]4- and [C2]2 polyanions, respectively.
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