Electric-field assisted solid-state reaction of aluminum and silicon dioxide

Article abstract of DOI:10.1149/1.2097534

The rate of solid-state reaction between Al and SiO₂ is found to be assisted by an electric field (Al negative) across the insulator. A novel model for the reaction mechanism is proposed in which the rate of reaction is determined by the rate of creation of reaction sites for Al at the SiO₂ surface as a result of transport of ionic Si away from the SiO₂/product interface. An applied electric field acts to vary the activation energy of this process.

Full text of DOI:10.1149/1.2097534

Downloaded on 2015-06-10 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-10 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-10 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).