High-temperature dielectric breakdown of silicon dioxide films with aluminum electrodes

Article abstract of DOI:10.1149/1.2096721

One micron silicon dioxide films are found to be rapidly reduced by aluminum at temperatures above 450°C. The resulting Al₂O₃ is found to be in discrete planar regions within the SiO₂. The redction process will lead to the formation of a defect-filled insulator whch will be breached by conductive paths. The process is strongly field-assisted with a zero field activation energy of 2.3 ev. It is suggested that the rate of reaction is determined by the rate of migration of ionic silicon, a product of the reducing reaction, in porous Al₂O₃.

Full text of DOI:10.1149/1.2096721

Downloaded on 2016-03-24 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2016-03-24 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2016-03-24 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2016-03-24 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).