Materials Research Bulletin p. 183 - 190 (1990)
Update date:2022-08-28
Topics:
DeSisto, W. J.
Qian, Y-T.
Hannigan, C.
Edwards, J. O.
Kershaw, R.
et al.
Aluminum thin films of 2000 angstrom were deposited on n-type silicon wafers by a novel spray pyrolysis method. The spray solution contained an aluminum acetylacetonate complex which was characterized by NMR techniques. The deposited films of Al2O3 were homogeneous, uniform, dense and had breakdown potentials of greater than 10 V.
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