114301-7
Spectroscopic studies of HGeBr
J. Chem. Phys. 125, 114301 ͑2006͒
TABLE V. A comparison of the ground state structural parameters and vibrational frequencies of the
germylenes.
a
GeH2
HGeFb
HGeClc
HGeBrd
HGeId
r͑GeH͒ Å
r͑GeX͒ Å
1.588͑1͒
¯
1.587b
1.754
1.586͑1͒
2.171͑2͒
93.9
1.593͑9͒
2.325͑21͒
93.6
1.589͑1͒
2.525͑5͒
93.2
͑HGeX͒°
91.22͑4͒
1856/1335
916/657
1866/1352f
94.3
e
͑cm−1
͒
͒
͒
1939/1381
782/568
669/672
1906.9/1360.4
735.3/528.3
404.9/402.4
1909.1/1359.4
707.0/505.0
293.6/292.5
1913.6/1363.0
671.7/478.5
241.5/241.2
1
e
e
͑cm−1
2
͑cm−1
3
aReference 33.
bStructure and frequencies from CCSD͑T͒/aug-cc-pVTZ calculations of this work.
cReference 8.
dThis work.
eGeH2 /GeD2 or HGeX/DGeX frequencies.
fHarmonic frequencies from a fitted ab initio potential surface, Ref. 34.
GeBr2=286 cm−1 ͑Ar matrix͒, and GeI2=230 cm−1 ͑Ar ma-
ACKNOWLEDGMENTS
trix͔͒ are also very similar to the values in Table V. The
3
One of the authors ͑B.S.T.͒ acknowledges the support of
a National Science Foundation Graduate Research Fellow-
ship and two of the authors ͑G.A.S. and K.L.P.͒ acknowledge
funding from the Kentucky NSF EPSCoR program, spon-
sored by both the Commonwealth of Kentucky and NSF
͑EPSCoR Award No. 0132295͒. Another author ͑R.H.J.͒ ac-
knowledges the support of the NSF Research at Undergradu-
ate Institutions program. This research was supported by the
U.S. National Science Foundation, Grant No. CHE-0513495.
data indicate that the derived HGeX bond lengths and
stretching frequencies are entirely consistent with those of
similar molecules and with trends observed for the HSiX
species.
The HGeX bond angles decrease with increasing size of
the substituted halogen, a trend which is somewhat counter-
intuitive, but is exactly the same as was found for the
monohalosilylenes,32 so it can hardly be accidental. As ar-
gued previously,28 the electronegativity of the halogen sub-
stituent can be used to account for this effect. In the HGeX
series, we note that the calculated charge on the central ger-
manium atom increases with increasing substitutent elec-
tronegativity ͑HGeI=0.28, HGeBr=0.28, HGeCl=0.51, and
HGeF=0.70͒, consistent with the conclusion from theoretical
studies on the silylenes46 that electronegative substituents X
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nb
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