COMMUNICATION
DOI: 10.1002/chem.201303638
Simulating Microwave Chemistry in a Resistance-Heated Autoclave Made of
Semiconducting Silicon Carbide Ceramic
[
a]
David Obermayer, Markus Damm, and C. Oliver Kappe*
First described more than two decades ago, microwave
chemistry has matured from a laboratory curiosity to an es-
tablished scientific technique that is used today almost on
a routine basis by chemists in both academia and industry.
The advantages of this nonclassical heating technology for
synthetic applications—ranging from organic, peptide, and
polymer synthesis, to nanomaterials and material sciences
research—are manifold and are well documented in thou-
sands of publications, hundreds of review articles, and sever-
waves. Significantly, this eliminates a lot of the complexity,
cost, and safety issues that are derived from working with
electromagnetic fields and microwave-reactor technology,
and enables to perform high-temperature autoclave-type
“microwave” chemistry in a much smaller and simpler
device.
[7]
Silicon carbide is a chemically inert and mechanically ex-
tremely robust semiconducting ceramic material that can be
utilized at extraordinarily high temperatures due to its high
melting point (ꢀ27008C) and very low thermal-expansion
[1,2]
al books.
In the majority of the reported examples, use of
[4]
sealed-vessel microwave technology has been shown to radi-
cally reduce reaction times and to increase product yields
and product purities (or material properties) compared to
coefficient. As a result of the high thermal conductivity of
SiC, the heat flow through the wall of the SiC reaction
[4,5]
vessel is exceptionally fast in both directions.
Due to the
[1,2]
conventionally processed experiments.
Today, it is com-
extremely high thermal effusivity of SiC, the contents inside
the SiC reaction vial are also heated in a very efficient
monly accepted in the scientific community that the ob-
served effects in general can be rationalized by a purely
bulk temperature phenomenon, resulting from rapid dielec-
tric heating of the reaction mixture to a high-temperature
regime in a sealed-vessel, autoclave-type microwave reac-
[4,5]
manner.
As described herein, a reaction vessel made of
an appropriate SiC sinter ceramic can be readily trans-
formed into a self-heating pressure reactor by applying sur-
face electrodes on the material. Notably, this approach
allows constructing an autoclave system that is not only min-
iaturized, but also responds unusually fast to set-point
changes. Thus, most of the design requirements for an effi-
cient autoclave system, such as temperature and pressure re-
sistance, chemical inertness and rapid heating/cooling cycles
can be directly derived from the rather unique material
properties inherent to SiC. For the current reactor design,
we have employed cylindrical 10 mL SiC reaction vessels
[
3]
tor.
In 2009, we have described a reaction vessel made out of
sintered silicon carbide (SiC) ceramic for use in conjunction
[4]
with a dedicated single-mode microwave reactor. The
strongly microwave absorbing SiC material effectively
shields the contents inside the reaction vessel from the elec-
tromagnetic field while at the same time allows rapid heat-
ing of the reaction mixture due to the extremely high ther-
mal conductivity and effusivity (a measure for the ability to
identical in shape and size to the process vials used in our
[5]
[4,6]
exchange thermal energy with its surroundings) of the ce-
ramic material. In essence, this technology therefore simu-
lates a conductively heated autoclave experiment under
carefully controlled and monitored processing conditions
previous microwave studies
and have modified these ves-
[8]
sels with a thin gold coating (Figure 1). This layer was sub-
sequently etched by a photolithographic method to generate
[8]
a pattern of interdigitating combs. This modification is not
only useful to tune the electrical resistance of the semicon-
ducting reactor material within a wide range, but also to
precisely direct the heat evolution to the desired areas on
the vessel. Reversible contacting was ensured with two care-
fully designed conical electrodes made of soft graphite
[6]
(
temperature, pressure, stirring rate). Herein, we now
demonstrate that the same processing performance and re-
action control can be achieved in a much simpler way by uti-
lizing a SiC autoclave that is heated by standard resistance
(
ohmic) heating principles, therefore not requiring micro-
(
bottom electrode) and
a
noble-metal/graphite-coated
copper contact (Ni/Pd/Au/C on copper; top electrode;
[
a] Dr. D. Obermayer, Dr. M. Damm, Prof. Dr. C. O. Kappe
Christian Doppler Laboratory for Microwave Chemistry (CDLMC)
and Institute of Chemistry, Karl-Franzens-University Graz
Heinrichstrasse 28, 8010 Graz (Austria)
Fax : (+43)(0)316-380-9840
E-mail: oliver.kappe@uni-graz.at
[8]
Figure 1). The gold-coated SiC vial was then turned into
a programmable temperature-controlled autoclave reactor
by connecting it to a low-voltage alternating current source
coupled to a semiconductor switch controlled by a propor-
[8]
tional-integral derivative (PID) controller (Figure 1). To
be able to safely process reaction mixtures above their boil-
ing points, a sealing mechanism (ꢁ2508C and ꢁ24 bar) with
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under http://dx.doi.org/10.1002/chem.201303638.
Chem. Eur. J. 2013, 19, 15827 – 15830
ꢀ 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
15827