J. Am. Chem. Soc. 2000, 122, 11021-11022
11021
A Novel Class of Emitting Amorphous Molecular
Materials as Bipolar Radical Formants:
We present here synthesis and characterization of a novel class
of high-performance blue-green and green emitting amorphous
molecular materials, 2-{4-[bis(4-methylphenyl)amino]phenyl}-
2
5
2
5
-{4-[Bis(4-methylphenyl)amino]phenyl}-
5
-(dimesitylboryl)thiophene (PhAMB-1T) and 2-{4-[bis(9,9-
dimethylfluorenyl)amino]phenyl}-5-(dimesitylboryl)thiophene
FlAMB-1T). To the best of our knowledge, these materials are
-(dimesitylboryl)thiophene and
-{4-[Bis(9,9-dimethylfluorenyl)amino]phenyl}-
-(dimesitylboryl)thiophene
(
the first definite examples having the desired bipolar radical
formant character that allows both stable cation and anion radicals,
intense fluorescent characteristics, and the capability to form stable
amorphous glasses with high glass-transition temperatures (T s)
g
and uniform thin films by vacuum deposition.
Yasuhiko Shirota,* Motoi Kinoshita, Tetsuya Noda,
Kenji Okumoto, and Takahiro Ohara
Department of Applied Chemistry
Faculty of Engineering, Osaka UniVersity
Yamadaoka, Suita, Osaka 565-0871, Japan
These novel emitting amorphous molecular materials are
different in molecular architecture from the hitherto reported
emitting materials containing heteroaromatic rings such as oxa-
ReceiVed June 28, 2000
6
7
diazole or triazole. The incorporation of the triphenylamine and
dimesitylboryl moieties, which are π-conjugated through the
thiophene ring, is intended to provide both electron-donating and
Amorphous molecular materials have demonstrated their suit-
ability and versatility for use in organic light-emitting diodes
1
(
OLEDs). In this work, we focused our attention to the design
-accepting properties, respectively, and to facilitate formation of
and synthesis of a new and better generation of emitting materials.
In any type of OLEDs consisting of a single emitting layer or of
multilayers using additional charge-transport layers, the emitting
layer functions as the recombination center for the holes and
electrons injected from the anode and cathode. The generated
electronically excited-state molecule of the emitting layer either
emits luminescence or serves as a host that transfers its excitation
energy to a luminescent dopant. Therefore, materials for use in
the emitting layer should meet the requirements of energy level
matching for charge carrier injection and acceptance of both holes
and electrons, and hence should desirably possess bipolar character
to permit the formation of both stable cation and anion radicals.
In addition, the emitting materials should form homogeneous thin
films and exhibit intense fluorescence. The fulfillment of these
material requirements is expected to lead to enhanced performance
and operational stability of OLEDs.
amorphous glasses due to their nonplanar molecular structures.
Scheme 1
3
Tris(8-quinolinolato)aluminum (Alq ) has been most widely
2
used as a green emitter or a host material for luminescent dopants.
It undergoes reversible reduction, but its anodic oxidation is
3
irreversible. The instability of the Alq
3
cation radical leads to
the long-term degradation of Alq
3
-based OLEDs, causing a
significant decrease in the luminescence efficiency.4 Other
emitting materials, including only scarce examples of materials
with bipolar character, e.g., compounds having an 1,3,4-oxadiazole
moiety, have also been reported.5 However, redox properties
of most of the reported materials for the emitting layer have not
been studied in any detail, some materials undergoing irreversible
oxidation or reduction. Ruthenium(II) complexes have bipolar
PhAMB-1T and FlAMB-1T were synthesized by the reaction
of dimesitylboron fluoride with lithiated N,N-bis(4-methylphenyl)-
-(2-thienyl)aniline or N,N-bis(9,9-dimethylfluorenyl)-4-(2-thienyl)-
4
-10
aniline in tetrahydrofuran (THF) under nitrogen atmosphere in
ca. 50% yield. The synthetic procedure of FlAMB-1T is shown
in Scheme 1. These compounds were purified by silica gel column
chromatography, followed by recrystallization from solution, and
identified by various spectroscopic methods, mass spectrometry,
and elemental analysis.1
1,12
PhAMB-1T and FlAMB-1T display intense blue-green and
green fluorescence, respectively. The electronic absorption and
fluorescence spectra of PhAMB-1T and FlAMB-1T in a THF
(
6) (a) Hamada, Y.; Adachi, C.; Tetsuo, T.; Saito, S. Jpn. J., Appl. Phys.
1
9
1
992, 31, 1812. (b) Tamoto, N.; Adachi, C.; Nagai, K. Chem. Mater. 1997,
, 1077. (d) Antoniadis, H.; Inbasekaran, M.; Woo, E. P. Appl. Phys. Lett.
998, 73, 3055.
(7) Kido, J.; Kimura, M.; Nagai, K. Chem. Lett., 1996, 47.
9
character, but do not form uniform thin films by themselves.
(8) Salbeck, J.; Yu, N.; Bauer, J.; Weiss o¨ rtel, F.; Bestgen, H. Synth. Met.
997, 91, 209.
1
*
To whom correspondence should be addressed. Phone: +81-6-6879-
(9) (a) Lyons, C. H.; Abbas, E. D.; Lee, J.-K.; Rubner, M. F. J. Am. Chem.
7
364. Fax: +81-6-6879-7367. E-mail: shirota@ap.chem.eng.osaka-u.ac.jp.
Soc., 1998, 120, 12100. (b) Gong, X.; Ng, P. K.; Chan, W. K. AdV. Mater.
1998, 10, 1337. (c) Handy, E. S.; Pal, A. J.; Rubner, M. F. J. Am. Chem.
Soc., 1999, 121, 3525.
(
1) Shirota, Y. J. Mater. Chem. 2000, 10, 1 and references therein.
2) (a) Tang, C. W.; VanSlyke, S. A. Appl. Phys. Lett. 1987, 51, 913. (b)
(
Tang, C. W.; VanSlyke, S. A.; Chen, C. H. J. Appl. Phys. 1989, 65, 3610.
(10) (a) Noda, T.; Ogawa, H.; Noma, N.; Shirota, Y. AdV. Mater. 1997, 9,
(
3) Papadimitrakopoulos, F.; Zhang, X.-M.; Thomsen III, D. L.; Higginson,
K. A. Chem. Mater. 1996, 8, 1363.
4) Popovic, Z. D.; Aziz, H.; Hu, N.-X.; Hor, A.-M.; Xu, G. Synth. Met.
000, 111-112, 229.
720. (b) Noda, T.; Ogawa, H.; Shirota, Y. AdV. Mater. 1999, 11, 283.
+
1
3
(11) PhAMB-1T: MS: m/e 603 (M ). H NMR (600 MHz, CDCl ) δ
(
(ppm): 7.48 (2H, d, J ) 8.5), 7.38 (1H, d, J ) 3.7), 7.34 (1H, d, J ) 3.7),
7.07 (4H, d, J ) 8.3), 7.00 (4H, d, J ) 8.3), 6.96 (2H, d, J ) 8.5), 6.82 (4H,
2
(5) (a) Hamada, Y.; Sano, T.; Fujita, M.; Fujii, T.; Nishio, Y.; Shibata, K.
s), 2.31 (6H, s), 2.30 (6H, s), 2.17 (12H, s). Anal. Calcd for C42H42BNS: C,
Jpn. J. Appl. Phys. 1993, 32, L514. (b) Hamada, Y.; Sano, T.; Fujii, H.; Nishio,
Y.; Takahashi, H.; Shibata, K. Jpn. J. Appl. Phys. 1996, 35, L1339.
83.57; H, 7.01; N, 2.32, B, 1.79; S, 5.31. Found: C, 83.44; H, 7.14; N, 2.36;
S, 5.30.
1
0.1021/ja0023332 CCC: $19.00 © 2000 American Chemical Society
Published on Web 10/21/2000