Chemistry of Materials
Article
(25) Harris, D.; Bawendi, M. J. Am. Chem. Soc. 2012, 134, 20211−
20213.
Notes
The authors declare no competing financial interest.
(26) Douglas, T.; Theopold, K. H. Inorg. Chem. 1991, 30, 594−596.
(27) Becker, G.; Schmidt, H.; Uhl, G.; Uhl, W.; Regitz, M.; Rosch,
̈
ACKNOWLEDGMENTS
■
W.; Vogelbacher, U. J. Inorg. Synth. 1990, 27, 243−249.
(28) Goel, S.; Chiang, M.; Rauscher, D.; Buhro, W. J. Am. Chem. Soc.
1993, 115, 160−169.
We gratefully acknowledge the University of Washington for
funding this research. We acknowledge Prof. William Buhro
and Subhash Goel for helpful discussions regarding the
synthesis of HP(SiMe3)2. We acknowledge Prof. Daniel
Gamelin for feedback regarding the preparation and
presentation of this manuscript and Dr. Brian Walker for
helpful discussions. Part of this work was conducted at the
University of Washington NanoTech User Facility, a member
of the NSF National Nanotechnology Infrastructure Network
(NNIN).
(29) Xie, R.; Battaglia, D.; Peng, X. J. Am. Chem. Soc. 2007, 129,
15432−15433.
(30) Mutlugun, E.; Hernandez-Martinez, P.; Eroglu, C.; Coskun, Y.;
Erdem, T.; Sharma, V.; Unal, E.; Panda, S.; Hickey, S.; Gaponik, N.;
Eychmuller, A.; Demir, H. Nano Lett. 2012, 12, 3986−3993.
̈
(31) Li, L.; Reiss, P. J. Am. Chem. Soc. 2008, 130, 11588−11589.
(32) Thuy, U.; Huyen, T.; Liem, N.; Reiss, P. Mater. Chem. Phys.
2008, 112, 1120−1123.
(33) Cros-Gagneux, A.; Delpech, F.; Nayral, C. l.; Cornejo, A.;
Coppel, Y.; Chaudret, B. J. Am. Chem. Soc. 2010, 132, 18147−18157.
(34) Xu, S.; Kumar, S.; Nann, T.; Kumar, A. J. Am. Chem. Soc. 2006,
128, 1054−1055.
ABBREVIATIONS
LEET, lowest energy electronic transition; fwhm, full width at
half-maximum; Abs, absorbance; QD, quantum dot
■
(35) Please see the Supporting Information for more details.
(36) Micic, O.; Cheong, H.; Fu, H.; Sprague, J.; Mascarenhas, a.;
́ ́
Mascarenhas, A.; Nozik, A. J. Phys. Chem. B 1997, 101, 4904−4912.
(37) Average fwhm in wavelength range from 40 to 50 nm.
(38) Owen, J.; Park, J.; Trudeau, P.-E.; Alivisatos, A. J. Am. Chem. Soc.
2008, 130, 12279−12281.
REFERENCES
■
(1) Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. J. Appl. Phys.
2001, 89, 5815−5874.
(2) Adachi, S. Properties of Group-IV, III-V and II-VI Semiconductors;
John Wiley & Sons: West Sussex, U.K., 2005.
(39) Anderson, N. C.; Owen, J. S. Chem. Mater. 2013, 25, 69−76.
(40) Frederick, M.; Achtyl, J.; Knowles, K.; Weiss, E.; Geiger, F. J.
Am. Chem. Soc. 2011, 133, 7476−7481.
(3) Gupta, S.; Whitaker, J. F.; Mourou, G. A. IEEE J. Quantum
Electron. 1992, 28, 2464−2472.
(4) Schubert, E. F. Doping in III-V Semiconductors; Cambridge
University Press: Cambridge, U.K..
(41) Fritzinger, B.; Capek, R.; Lambert, K.; Martins, J.; Hens, Z. J.
Am. Chem. Soc. 2010, 132, 10195−10201.
(42) Yu, W. W.; Peng, X. Angew. Chem., Int. Ed. 2002, 41, 2368−
2371.
(43) Bullen, C.; Mulvaney, P. Nano Lett. 2004, 4, 2303−2307.
(44) Peng, X. G.; Manna, L.; Yang, W. D.; Wickham, J.; Scher, E.;
Kadavanich, A.; Alivisatos, A. P. Nature 2000, 404, 59−61.
(45) Wang, F.; Tang, R.; Buhro, W. E. Nano Lett. 2008, 8, 3521−
3524.
(46) Wang, F.; Tang, R.; Kao, J. L. F.; Dingman, S. D.; Buhro, W. E.
J. Am. Chem. Soc. 2009, 131, 4983−4994.
(47) Garcia-Rodriguez, R.; Hendricks, M. P.; Cossairt, B. M.; Liu, H.;
Owen, J. S. Chem. Mater. 2013, 25 (8), 1233−1249.
(48) Evans, C. M.; Evans, M. E.; Krauss, T. D. J. Am. Chem. Soc.
2010, 132, 10973−10975.
(49) Hendricks, M. P.; Cossairt, B. M.; Owen, J. S. ACS Nano 2012,
6, 10054−10062.
(50) Cossairt, B.; Owen, J. Chem. Mater. 2011, 23, 3114−3119.
(5) Casey, H. C. Devices for Integrated Circuits: Silicon and III-V
Compound Semiconductors; Wiley: New York, 1998.
(6) Li, T.; Mastro, M. III-V Compound Semiconductors: Integration
with Silicon-Based Microelectronics; CRC Press: Boca Raton, FL, 2011.
(7) Alivisatos, A. P.; Gu, W.; Larabell, C. Annu. Rev. Biomed. Eng.
2005, 7, 55−76.
(8) Chan, W. C. W.; Nie, S. Science 1998, 281, 2016−2018.
(9) Phillips, J. M.; Coltrin, M. E.; Crawford, M. H.; Fischer, A. J.;
Krames, M. R.; Mueller-Mach, R.; Mueller, G. O.; Ohno, Y.; Rohwer,
L. E. S.; Simmons, J. A.; Tsao, J. Y. Laser Photonics Rev. 2007, 1, 307−
333.
(10) Brunetti, V.; Chibli, H.; Fiammengo, R.; Galeone, A.; Malvindi,
M. A.; Vecchio, G.; Cingolani, R.; Nadeau, J. L.; Pompa, P. P.
Nanoscale 2013, 5, 307−317.
(11) Derfus, A. M.; Chan, W. C. W.; Bhatia, S. N. Nano Lett. 2004, 4,
11−18.
(12) Park, J.; Joo, J.; Kwon, S. G.; Jang, Y.; Hyeon, T. Angew. Chem.,
Int. Ed. 2007, 46, 4630−4660.
(13) Murray, C. B.; Norris, D. J.; Bawendi, M. G. J. Am. Chem. Soc.
1993, 115, 8706−8715.
(14) Peng, X. G.; Wickham, J.; Alivisatos, A. P. J. Am. Chem. Soc.
1998, 120, 5343−5344.
(15) Battaglia, D.; Peng, X. Nano Lett. 2002, 2, 1027−1030.
(16) Allen, P. M.; Walker, B. J.; Bawendi, M. Angew. Chem., Int. Ed.
2010, 49, 760−762.
(17) Green, M. Curr. Opin. Solid State Mater. Sci. 2002, 6, 355−363.
(18) Wells, R. L.; Gladfelter, W. L. J. Cluster Sci. 1997, 8, 217−238.
(19) Baek, J.; Allen, P. M.; Bawendi, M. G.; Jensen, K. F. Angew.
Chem., Int. Ed. 2011, 50, 627−630.
(20) Li, L.; Protier
2623.
̀
e, M.; Reiss, P. Chem. Mater. 2008, 20, 2621−
(21) Lim, T.; Ravi, S.; Bumby, C.; Etchegoin, P.; Tilley, R. J. Mater.
Chem. 2009, 19, 4852−4856.
(22) Xu, S.; Kumar, S.; Nann, T. J. Am. Chem. Soc. 2006, 128, 1054−
1055.
(23) Carenco, S.; Demange, M.; Shi, J.; Boissier
Floch, P.; Mezailles, N. Chem. Commun. 2010, 46, 5578−5580.
(24) Carenco, S.; Hu, Y.; Florea, I.; Ersen, O.; Boissiere, C.;
Mezailles, N.; Sanchez, C. Chem. Mater. 2012, 24, 4134−4145.
̀
e, C.; Sanchez, C.;
́
̀
́
G
dx.doi.org/10.1021/cm401289j | Chem. Mater. XXXX, XXX, XXX−XXX