Hydrogen adsorption on the indium-rich indium phosphide (001) surface: A novel way to produce bridging In-H-In bonds

Article abstract of DOI:10.1021/ja020348p

The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich Δ(2 × 4) reconstruction produced a neutral, cova

Full text of DOI:10.1021/ja020348p

Published on Web 11/20/2002
Hydrogen Adsorption on the Indium-Rich Indium Phosphide
(001) Surface: A Novel Way to Produce Bridging In-H-In
Bonds
§
†
†
‡
†
†
,†
K. Raghavachari, Q. Fu, G. Chen, L. Li, C. H. Li, D. C. Law, and R. F. Hicks*
Contribution from the Chemical Engineering Department, UniVersity of California, Los Angeles,
California 90095, Department of Physics, UniVersity of Wisconsin, Milwaukee, Wisconsin 53201,
and Materials Research, Agere Systems, Murray Hill, New Jersey 07974
Received March 7, 2002
Abstract: The indium phosphide (001) surface provides a unique chemical environment for studying the
reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on
the In-rich δ(2 × 4) reconstruction produced a neutral, covalently bound bridging indium hydride. Using
vibrational spectroscopy and ab initio cluster calculations, two types of bridging hydrides were identified,
a (µ-H)In
2
and a (µ-H)
2 3
In “butterfly-like” structure. These structures were formed owing to the large
thermodynamic driving force for adsorption of H atoms on solid-state indium dimers.
indane, InH , in low-temperature matrix isolation experiments.9
I. Introduction
3
Several other compounds with terminal In-H bonds have been
prepared by incorporating bulky ligands into the organometallic
Electron-deficient group IIIA hydrides (M-H, where M )
B, Al, Ga, In, or Tl) have been the subject of extensive studies,
molecules, such as in [Li(thf)2]-[{(Me3Si)3C}2In2H5], InH{2-
primarily because they contain three-center two-electron (3c-
10
e) bridging hydrogen bonds.1
-14
Me2NCH2(C6H4)}2, and Me2InB3H8. Most attempts to produce
compounds with bridged hydrogen bonds have been unsuccess-
ful, except in the case of the salts K[H{In(CH2CMe3)3}2] and
2
Many discoveries have been
made in preparing these compounds and characterizing their
chemical and structural properties. More than 25 polyhedral
boranes (BnHm with n varying from 1 to 20) have been
synthesized over the years.2,3 By contrast, structures formed with
[
Li(tmeda)2]-[Me3In-H-InMe3], where the indium exists in
1
0
a negatively charged complex.
We have developed an alternative approach to studying
hydrogen bonds to electron-deficient group IIIA elements.
Atomic hydrogen is adsorbed onto the surface of a group IIIA-
rich III-V compound semiconductor, and the properties of the
M-H bonds are examined by experimental and theoretical
the heavier elements are much fewer in number. Aluminum
hydride exists only as a polymeric solid of (AlH3)n, while
6
digallane (Ga2H6) has been synthesized in an inert-gas matrix
at cryogenic temperatures.7
,8
It is even more difficult to prepare compounds with indium
hydride bonds. Pullumbi et al. synthesized and characterized
1
5-19
means.
The (001) plane of compound semiconductors
consists of alternating layers of group III and V atoms. The
surface may be terminated with either one of these elements,
depending on the preparation method. In the ideal case, each
atom exposed on the surface has two dangling bonds. However,
to minimize the total surface energy, one of the dangling bonds
is eliminated by forming dimers between neighboring atoms.20
On group IIIA-rich surfaces, a high concentration of metal
dimers is observed. Adsorption of hydrogen atoms on these sites
leads to the formation of stable metal hydrides at room
temperature. Thus far, we have characterized the gallium
hydrides generated on the different reconstructions of GaAs
*
To whom correspondence should be addressed. E-mail: rhicks@ucla.edu.
University of California.
University of Wisconsin.
†
‡
§
Agere Systems.
(
1) Taylor, M. J.; Brothers, P J. In Chemistry of Aluminum, Gallium, Indium
and Thallium; Downs, A. J., Ed.; Blackie: Glasgow, 1993; p 111.
2) Cotton, F. A.; Wilkinson, G. AdVanced Inorganic Chemistry; John Wiley
(
&
Sons: New York, 1988.
(
(
3) Greenwood, N. N. The Chemistry of Boron; Pergamon Press: Oxford, 1975.
4) Lawrence, S. H.; Wermer, J. R.; Boocock, S. K.; Banks, M. A.; Keller, P.
C.; Shore, S. G. Inorg. Chem. 1986, 25, 367.
5) Downs, A. J.; Pulham, C. R. Chem. ReV. 1994, 23, 175.
6) Browser, F. M.; Matzek, N. E.; Reigler, P. F.; Rinn, H. W.; Roberts, C.
B.; Schmidt, D. L.; Snover, J. A.; Terada, K. J. Am. Chem. Soc. 1976, 98,
(
(
2
450.
1
7
(
(
(
7) Downs, A. J.; Goode, M. J.; Pulham, C. R. J. Am. Chem. Soc. 1989, 111,
(001).
1
936.
In this work, we report on hydrogen bond formation on the
indium-rich InP (001) surface. Two types of bridging hydrides
8) Pulham, C. R.; Downs, A. J.; Goode, M. J.; Rankin, D. W. H.; Robertson,
H. E. J. Am. Chem. Soc. 1991, 113, 5149.
9) Pullumbi, P.; Bouteiller, Y.; Manceron, L.; Mijoule, C. Chem. Phys. 1994,
1
85, 25.
(15) Qi, H.; Gee, P. E.; Hicks, R. F. Phys. ReV. Lett. 1994, 72, 250.
(16) Li, L.; Han, B.-K.; Fu, Q.; Hicks, R. F. Phys. ReV. Lett. 1999, 82, 1879.
(17) Hicks, R. F.; Qi, H.; Fu, Q.; Han, B. K.; Li, L. J. Chem. Phys. 1999, 110,
10498.
(18) Fu, Q.; Li, L.; Hicks, R. F. Phys. ReV. B 2000, 61, 11034.
(19) Fu, Q.; Li, L.; Li, C. H.; Begarney, M. J.; Law, D. C.; Hicks, R. F. J.
Phys. Chem. B 2000, 104, 5595.
(20) Pashley, M. D. Phys. ReV. B 1989, 40, 10481.
(
10) Hibbs, D. E.; Hursthouse, M. B.; Jones, C.; Smithies, N. A. Organometallics
998, 17, 3108 and references therein.
11) Hunt, P.; Schwerdtfeger, P. Inorg. Chem. 1996, 35, 2085.
12) Bennett, F. R.; Connelly, J. P. J. Phys. Chem. 1996, 100, 9308.
13) Duke, B. J.; Liang, C.; Schaefer, H. F. J. Am. Chem. Soc. 1991, 113, 2884.
14) Fu, Q.; Negro, E.; Chen, G.; Law, D. C.; Li, C. H.; Hicks, R. F.;
Raghavachari, K. Phys. ReV. B 2002, 65, 075318.
1
(
(
(
(
10.1021/ja020348p CCC: $22.00 © 2002 American Chemical Society
J. AM. CHEM. SOC. 2002, 124, 15119-15124
9
15119

A R T I C L E S
Raghavachari et al.
are observed, a (µ-H)In2 and a (µ-H)2In3 structure. It is found
that In-H-In bond formation is strongly favored owing to the
exothermic reaction between gas-phase hydrogen atoms and
three-fold-coordinated indium.
II. Experimental Section
Indium phosphide films, 0.5 µm thick, were grown on InP (001)
substrates by organometallic vapor-phase epitaxy.2 The following
optimized conditions were used during growth: 600 °C, 20 Torr of
1
-
4
hydrogen, 6.5 × 10 Torr of tri-isopropylindium (TIPIn), 0.13 Torr
of tert-butylphosphine (TBP) (V/III ratio of 200), and a total flow rate
of 2.5 L/min at 25 °C and 760 Torr. After shutting off the TIPIn supply,
the TBP and hydrogen flows were maintained until the samples were
cooled to 300 and 40 °C, respectively. Then the crystals were transferred
directly to an ultrahigh vacuum chamber without air exposure. In a
-
5
vacuum, the samples were annealed in 1 × 10 Torr of phosphine for
2
1
3
0 min at 500 °C to obtain the δ(2 × 4) reconstruction. After cooling
the samples to 25 °C, the surface structure was characterized by low-
energy electron diffraction (LEED) and scanning tunneling microscopy
(STM). The latter images were obtained of the filled states at a sample
bias of -3.0 V and a tunneling current of 0.5 nA.
The infrared spectra were recorded by multiple internal reflections
Figure 1. Models of the cluster backbones used to simulate hydrogen
adsorption on indium dimers.
3
through a trapezoidal InP crystal, 40.0 × 10.0 × 0.64 mm . This crystal
provided for 31 reflections off the front face. Two substrate orientations
were examined: one with the long crystal axis parallel to the [ 1h 10]
direction and one with the long crystal axis parallel to the [110]
was found by datively bonding phosphine to the indium atoms, thereby
maintaining tetra-coordination for all bulk In atoms on the cluster.
In the current work on the indium-rich surface, the corresponding
-7
direction. Hydrogen was dosed into the chamber at 5 × 10 Torr and
3
procedure would have been to construct a cluster with InH molecules
dissociated to atoms by a tungsten filament located 4 cm away from
datively bound to the second-layer phosphorus atoms. However, we
found that neither the structure nor the vibrational frequencies changed
significantly with this modification, and we decided to adopt the simpler
model where the three-fold coordinated P atoms are left with their lone
pairs of electrons. To achieve the proper valence configuration following
hydrogen adsorption, three of the second layer phosphorus atoms are
terminated with lone pairs, while the remainder of the bulk In and P
atoms are truncated with hydrogen. The hydride chemistry of the δ(2
the sample face. The flux of H atoms relative to H
2
molecules was
estimated to be ∼0.1%. The surface was saturated after dosing
hydrogen for 30 min (900 L H ). Vibrational spectra were collected
before and during hydrogen adsorption with a BIO-RAD FTS-40A
1
7
2
-
1
spectrometer. These spectra were recorded at 8 cm resolution and
by co-adding 1024 scans. The spectra presented in this report show
the change in reflectance (per reflection) that results from taking the
ratio of the sample spectrum with a full coverage of hydrogen to that
of the clean surface.
×
4) InP (001) surface is simulated by adding hydrogen atoms to the
terminal and bridging sites on the top-layer indium dimers.
The Gaussian98 quantum chemistry suite was used to optimize the
structure of each In P H cluster and predict its vibrational properties.
7 8 z
III. Theoretical Methods
The quantum chemistry calculations were performed on the idealized
In P structures shown in Figure 1. Cluster 1 contains two side-by-
7 8
These calculations were made utilizing density functional theory with
the Becke three-parameter exchange functional and the Lee-Yang-
Parr correlation functional (B3LYP). We chose the (18s/14p/9d)/[6s/
5p/3d] contracted basis set for indium, the Dunning-Huzinaga (11s/
7p/1d)/[6s/4p/1d] contracted basis set (D95**) for phosphorus, the
D95** polarized double-ú basis set for the surface hydrogen atoms,
and the D95 double-ú basis set for the terminating hydrogen atoms.
The third-layer In and fourth-layer P atoms, along with their attached
H atoms, were frozen along tetrahedral directions (In-P ) 2.54 Å,
In-H ) 1.76 Å, P-H ) 1.42 Å), while the remaining atoms were
fully allowed to relax. The frozen degrees of freedom were removed
in the force constant analysis, and no negative vibrational frequencies
were observed for the final structures.
side indium dimers attached to eight “bulk” P atoms and three “bulk”
In atoms. Cluster 2 contains a single indium dimer adjacent to an In
atom in the same row. These species are tethered to eight “bulk” P
atoms and four “bulk” In atoms. The second structure allows us to
examine the effects of interacting bridging hydrides. To simulate
hydrogen adsorption on the indium-rich δ(2 × 4) reconstruction,
7 8
hydrogen was added to the two In P clusters, and ab initio calculations
were performed to determine the optimum configurations. For hydrogen
adsorption on the phosphorus-rich InP surface, the reader is referred
to ref 14.
Typically, the truncated bulk bonds in the cluster models are
terminated with hydrogen atoms to eliminate artifacts due to excess
spin or charge. While such a treatment is appropriate for covalent
materials such as silicon, it is not valid for indium phosphide due to
the presence of three covalent bonds and one dative bond around each
In or P atom. While a truncated covalent bond can be terminated with
hydrogen, a different treatment is needed in the latter case. A logical
approach for a dative In-P bond is not to truncate with H but to leave
the In and P atoms three-fold coordinated (with the phosphorus carrying
the pair of electrons). However, in our previous work on P-rich
In our previous work on hydrogen adsorption on silicon and on P-rich
indium phosphide, we have successfully applied a single frequency
shift (for each mode type) to map the calculated vibrational frequencies
(22) Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M.
A.; Cheeseman, J. R.; Zakrzewski, V. G.; Montgomery, J. A.; Stratmann,
R. E.; Burant, J. C.; Dapprich, S.; Millam, J. M.; Daniels, A. D.; Kudin,
K. N.; Strain, M. C.; Farkas, O.; Tomasi, J.; Barone, V.; Cossi, M.; Cammi,
R.; Mennucci, B.; Pomelli, C.; Adamo, C.; Clifford, S.; Ochterski, J.;
Petersson, G. A.; Ayala, P. Y.; Cui, Q.; Morokuma, K.; Malick, D. K.;
Rabuck, A. D.; Raghavachari, K.; Foresman, J. B.; Cioslowski, J.; Ortiz,
J. V.; Stefanov, B. B.; Liu, G.; Liashenko, A.; Piskorz, P.; Komaromi, I.;
Gomperts, R.; Martin, R. L.; Fox, D. J.; Keith, T.; Al-Laham, M. A.; Peng,
C. Y.; Nanayakkara, A.; Gonzalez, C.; Challacombe, M.; Gill, P. M. W.;
Johnson, B. G.; Chen, W.; Wong, M. W.; Andres, J. L.; Head-Gordon,
M.; Replogle, E. S.; Pople, J. A. Gaussian 98, rev. A.7; Gaussian, Inc.:
Pittsburgh, PA, 1998.
1
4
surfaces, we found that three-fold coordinated In atoms are reactive
and lead to unphysical bridging interactions. A more realistic model
(
21) Li, L.; Fu, Q.; Li, C. H.; Han, B.-K.; Hicks, R. F. Phys. ReV. B. 2000, 61,
1
0223.
15120 J. AM. CHEM. SOC.
9
VOL. 124, NO. 50, 2002

Bridging In−H−In Bonds
A R T I C L E S
Table 1. Comparison of the B3LYP Geometries of In2H6
method
parameters
this work
ref 11
ref 12
bond distances (Å)
1.976
b
In-H
1.946
1.710
2.961
1.968
1.720
3.009
t
In-H
In-In
1.739
3.020
bond angle (deg)
99.7
b
∠
In-H -In (deg)
99.1
99.7
onto those observed by experiment.14,29 We have used the same
approach here: the predicted In-H stretching frequencies have been
-
1
uniformly shifted down by 100 cm to correct for systematic errors
in calculations, due to deficiencies in the cluster models, neglect of
anharmonicity, and so forth. This value was derived from the well-
defined terminal In-H stretching frequencies seen experimentally (vide
infra), and is essentially the same as the values used previously for the
Si-H and P-H stretching vibrations.
Figure 2. Filled-states STM image of the δ(2 × 4) reconstruction (440 ×
2
2
4
40 Å ; (inset) 40 × 40 Å ).
The accuracy of the calculations was assessed by comparing the
M-H stretching frequencies of indane predicted by our method to those
predicted with larger basis sets. It was found that the smaller basis
sets yielded essentially the same results as the larger ones. For indane,
-
1 9
the In-H stretching mode is centered at 1754 cm . Our calculation
-
1
predicted symmetric and asymmetric modes at 1773 and 1777 cm
,
respectively (without applying a correction factor). The relatively small
errors for indane suggest that a significant portion of the systematic
shift used for the surface frequencies stems from the deficiencies of
the cluster models in representing the electronic effects in the real
system. For comparison, Hunt et al. obtained frequencies of 1784 and
-
1
1
818 cm for the two modes in indane, employing an uncontracted
(
7s/6p/2d) valence basis set and a relativistic pseudopotential core for
1
1
indium. We have also calculated the structure of diindane, and our
results are compared to those reported by other research groups in Table
Figure 3. Ball-and-stick model of the δ(2 × 4) reconstruction.
1
. In ref 12, the calculations were performed with relativistic small-
electron-core pseudopotentials for indium, in which the 28 innermost
electrons were described by ECPs and the outer 21 electrons were
treated explicitly with an (8s8p5d)/[4s4p3d] contracted basis set. As
can be seen from Table 1, excellent agreement is achieved between
our calculations and the previously published work.
The three bright spots seen in the STM image inside each unit
cell are due to the filled phosphorus dangling bond and the two
In-In back-bonds of each In-P dimer.
3
1
IV. B. Vibrational Spectroscopy. Upon dosing the surface
with hydrogen, the (2 × 4) LEED pattern gradually converts to
(1 × 1), indicating that the hydrogen atoms react with the
dimers, breaking some of the In-P and In-In bonds and
changing the surface order. Shown in Figure 4 are a series of
infrared reflectance spectra for different coverages of hydrogen
on the indium-rich δ(2 × 4) at 298 K. In these spectra, one
IV. Results
IV. A. STM Data. A scanning tunneling micrograph of the
indium-rich δ(2 × 4) surface is shown in Figure 2. This
reconstruction exhibits uniform gray rows extending along the
[ 1h 10] crystal axis. Note the presence of a bilayer step in the
-1
sees a series of peaks between 2360 and 2200 cm due to P-H
lower left-hand corner of the image. In the inset, a close up of
the surface is shown which highlights the individual δ(2 × 4)
unit cells (white rectangle). Inside each rectangle, one can
discern three bright spots forming an equilateral triangle. This
31
stretching modes. In addition, there are two overlapping bands
-1
at 1682 and 1660 cm attributable to terminal indium hydrides,
-
1
and two extremely broad bands at about 1350 and 1150 cm
resulting from bridging indium hydrides. The two terminal
hydride bands are resolved upon deconvolution of the infrared
spectrum. Saturation of the adsorption sites occurs at about 700
L of H2, or close to 1.0 L of H atoms. It should be noted that
reconstruction is best described by the ball-and-stick model
shown in Figure 3.2
1,30
A single In-P mixed dimer straddles
four In-In dimers located in the next lower layer. In the [110]
direction, each set of four indium dimers is separated by a trench.
-
1
the infrared spectrum cuts off at 1100 cm because the lattice
vibrations of the crystal absorb all the light in this energy range.
Shown in Figure 5 are polarized infrared reflectance spectra
for saturation coverages of hydrogen on the δ(2 × 4) recon-
struction. The broad bands appearing between 1600 and 1000
(
(
(
23) Becke, A. D. J. Chem. Phys. 1993, 98, 1372.
24) Lee, C. T.; Yang, W. T.; Parr, R. G. Phys. ReV. B 1988, 37, 785.
25) Godbout, N.; Salahub, D. R.; Andzelm, J.; Wimmer, E. Can. J. Chem.
1
992, 70, 560.
(
26) Igel-Mann, G.; Stoll, H.; Preuss H. Mol. Phys. 1988, 65, 1321.
27) Dunning, T. H., Jr.; Hay, P. J. In Modern Theoretical Chemistry; Schaefer,
H. F., III, Ed.; Plenum: New York, 1976; Vol. 3, p 1.
(
-
1
cm are predominantly p-polarized when light travels along
110] direction (spectrum a), and predominantly s-polarized
(28) Bergner, A.; Dolg, M.; Kuechle, W.; Stoll, H.; Preuss, H. Mol. Phys. 1993,
[
8
0, 1431.
(
29) Chabal, Y. J. Surf. Sci. Rep. 1988, 8, 211; Weldon, M. K.; Queeney, K.
T.; Gurevich, A. B.; Stefanov B. B.; Chabal, Y. J.; Raghavachari, K. J.
Chem. Phys. 2000, 113, 2440.
(31) Hofacker, G. L.; Marechal, Y.; Ratner, M. A. In The Hydrogen Bond;
Schuster, P., Zundel, G., Sandorfy, S., Eds.; North-Holland: Amsterdam,
1976; Vol. 1, p 294.
(30) Schmidt, W. G. Phys. ReV. B 1998, 57, 14596.
J. AM. CHEM. SOC.
9
VOL. 124, NO. 50, 2002 15121

A R T I C L E S
Raghavachari et al.
Figure 4. Infrared reflectance spectra of adsorbed hydrogen on δ(2 × 4)
InP (001) at 25 °C as a function of H2 dosage.
Figure 6. Models of the optimized clusters, showing the indium hydrogen
bonds.
Table 2. Vibrational Modes Observed for the
Hydrogen-Terminated δ(2 × 4) Surface
theory
experiment
frequency
frequency
assignmentb
(cm
-1
)
intensity clustera
(cm
-1
)
intensity
In
In
In
In
In
In
In
In
In
In
In
In
In
In
In
1
1
1
1
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
-H
4
4
4
4
, In
, In
, In
, In
6
6
5
5
-H
-H
-H
-H
9
9
7
7
(as)
(s)
(as)
(s)
1659
1675
1659
1660
1348
M
M
M
M
W
3
3
4
4
3
1660
1682
1660
1660
1350
m
m
m
m
1
6
3
-In
-In
-In
-In
-In
-In
-In
-In
-In
-In
-In
2
as
s, br
8
7
as (as)
as
as (s)
1
6
3
8
2
7
1384
S
3
1350
s, br
1
1
1
6
1
1
1
4
4
3
8
4
4
4
2
2
2
7
2
2
2
-H
-H
s
5
-In
5
6
6
s
as
1117
1142
519
574
436
473
565
M
S
4
4
3
3
4
4
4
1150
1150
s, br
s, br
-In
W
W
M
M
W
-
-
-
-
-
s
-H
-H
-H
5
-In
5
-In
5
-In
6
6
6
r
w
sc
a
Refer to Figure 6. b as ) asymmetric; s) symmetric; r )rocking; sc
Figure 5. Polarized infrared reflectance spectra of hydrogen adsorbed on
the δ(2 × 4) surface, with the long crystal axis parallel to (a) the [110]
direction and (b) the [ 1h 10] direction.
) scissors, w ) wag.
one on the bridging site. In cluster 4, a trimer structure is shown,
where two 3c-2e hydride bonds are distributed among three
indium atoms. This structure can form whenever one of the In-
tI on Fd ii mg uer re b 3o ) n. ds is broken on the δ(2 × 4) surface (again refer
when light travels along [ 1h 10] direction (spectrum b). This
indicates that their dipole moments are parallel to [110] crystal
axis, which is in the same direction as the indium dimer bond.
IV. C. Ab Initio Calculations. On the δ(2 × 4) surface,
hydrogen reacts with the indium dimers and either inserts into
the In-In bonds or attaches directly to the terminal dangling
bonds. Two types of structures that can result from these
interactions are represented by clusters 3 and 4 in Figure 6.
The molecular cluster 3 simulates the structure of the δ(2 × 4)
reconstruction whereby one end of each indium dimer is bonded
above by the In-P mixed dimer (refer to Figure 3). In cluster
The vibrational and geometric properties of the indium
hydride clusters are summarized in Tables 2 and 3. The predicted
vibrational frequencies are compared to those recorded following
hydrogen adsorption on the indium phosphide surface. The
isolated terminal indium hydrides on 3 exhibit theoretical
-
1
stretching modes at 1659 and 1675 cm , respectively. The
higher-frequency mode has a larger contribution from the
hydrogen on the phosphorus side of the In-P mixed dimer.
These frequencies are in good agreement with the experimentally
3
, the surface In-In dimer bonds are broken, and two H atoms
-
1
adsorb onto each indium dimer, one on the terminal site and
observed bands at 1660 and 1682 cm . Note that the dipole
15122 J. AM. CHEM. SOC.
9
VOL. 124, NO. 50, 2002

Bridging In−H−In Bonds
A R T I C L E S
Table 3. Bond Lengths (Å) and Bond Angles (deg) for the
Indium-Rich Clusters
(001) surface, the exposed indium and phosphorus atoms can
be coordinated to hydrogen, indium, or phosphorus in a variety
of different ways. These alternate configurations will lead to a
variation in the distances between the In dimer atoms and the
angles of the In-H-In bonds. For example, the molecular
clusters 3 and 4 exhibit different equilibrium bond lengths and
angles, 3.92 and 3.81 Å, and 166° and 143°, respectively.
bond lengths
3
4
bond angles
3
4
o
o
o
o
96.9o
In1‚‚‚In2
In1-H3
In2-H3
In1-H4
In2-In5
In6‚‚‚In7
In6-H8
In7-H8
In6-H9
In7-P10
3.915
1.868
2.078
1.751
2.876
3.816
1.948
1.951
1.749
2.611
3.812
2.086
1.933
1.750
∠ H4-In1‚‚‚H3
∠ In1-H3-In2
∠ H9-In6‚‚‚H8
∠ In6-H8-In7
112.8
165.8
105.7
156.3
143.0o
Whereas the frequencies for the bridging indium hydride
stretching vibrations depend strongly on the local environment,
those for the terminal indium hydrides do not. We have
investigated this idea to some extent by changing the constraints
used in the calculations. In particular, complete relaxation of
the doubly bridged (µ-H)2In3 structure 4 leads to a large upward
shift in the asymmetric stretching frequency. However, this
relaxation is unphysical because the second-layer atoms undergo
buckling, a motion that is blocked by the extended InP crystal.
The vibrational frequencies obtained for the singly bridged
structure 3 are less dependent on the constraints. On the other
hand, in this compound the frequencies of the bridging hydride
modes are affected by the terminal hydrogen bonds. When these
moment for this harmonic oscillator has components parallel
to the [001] and [110] directions. Due to dielectric screening
of the adsorbate layer perpendicular to the surface, the measured
intensity along the [001] axis is reduced relative to that along
1
8
the [110]. This is consistent with the measurements of the
intensities of the 1660 and 1682 cm- bands: they are
p-polarized when the light is directed down the [110] axis, while
they are equally s- and p-polarized when the light is directed
down the [ 1h 10] axis. The terminal hydrogen atoms in structure
1
are not present, the In-H-In vibrations are shifted lower by
-1
1
00 to 150 cm .
4
are predicted to occur in the same frequency range.
V. B. Bridging Hydride Stability. Bridging indium hydrides
Hydrogen insertion into the indium dimer bonds produces
are formed on the InP δ(2 × 4) reconstruction because the
semiconductor lattice creates a template that favors the formation
of four-coordinate indium. Moreover, this reaction is driven by
the large amount of heat released upon adsorption of hydrogen
atoms from the gas phase (for an H atom, ∆Hf ) 52.2 kcal/
bridging hydrides as illustrated by clusters 3 and 4 in Figure 6.
These species exhibit intense asymmetric stretching modes that
are parallel to the [110] axis and very weak symmetric modes
that are normal to the surface. As shown in Table 2, the
asymmetric stretching vibrations for the bridging hydrides on
3
4
mol). For example, the incorporation of the four hydrogens
-
1
3
are predicted to be at 1348 and 1384 cm . These modes are
(two terminal and two bridging) shown in structure 3 involves
-
1
about 300 cm lower in frequency than the corresponding
values for the terminal hydrides. The theoretical results are
consistent with the infrared spectrum for the H-δ(2 × 4) surface,
a reaction enthalpy of -220 kcal/mol. This is similar to the
reaction enthalpies for the case of the other group III elements,
Al and Ga, which are known to form bridged structures. Thus,
one expects to observe bridging hydrides upon H atom adsorp-
tion on all the metal-rich III/V compound semiconductor
surfaces.
-
1
which contains a broad band located at about 1350 cm that
is polarized parallel to the [110] direction. On the other hand,
the weak symmetric vibrations for the bridging hydrides are
-
1
predicted to occur at 519 and 574 cm and fall below the
absorption cutoff for the InP crystal.
Insertion of hydrogen atoms into the metal dimer bond also
releases a substantial amount of strain on the In-P back-bonds.
The distance between the two In atoms on the unreconstructed
In cluster 4, coupling of adjacent bridged hydrogen atoms
occurs, leading to frequency lowering. The coupled symmetric
and asymmetric modes are predicted to be at 1117 and 1142
3
5
InP (001) surface is 4.2 Å. This may be contrasted to the In-
In dimer bond distance, which is calculated to be only 2.9 Å
on an optimized cluster 1 without any adsorbed hydrogen.
Formation of the 3c-2e bridging bond expands the distance
between the indium atoms to approximately 3.8-3.9 Å, a value
which is much closer to the surface lattice constant.
-1
cm , respectively. The former vibration with a dipole moment
change along the [001] direction is weak in intensity. Con-
versely, the latter vibration has a strong predicted intensity and
a dipole moment change along the [110] direction. We conclude
-
1
that the intense band observed at 1150 cm may be assigned
to the asymmetric stretch of the coupled bridging hydride.
Electron transfer between indium and the second-layer
phosphorus atoms does not play a role in stabilizing the bridging
hydrides. Theoretical calculations of In2H6 and (PH2)2In(µ-
H)2In(PH2)2 using the B3LYP method reveal that the dimer-
ization energy of the latter compound is 5 kcal/mol smaller than
V. Discussion
V. A. Vibrational properties. Examination of the infrared
spectra presented in Figures 4 and 5 reveals that the bands for
3
6
-
1
that of diindane. In addition, the strain in the surface In-H-
the In-H-In species at 1350 and 1150 cm are extremely
broad. The full-width-at-half-maxima equal 335 and 140 ( 25
-
1
(33) Kerr, J. A. In CRC Handbook of Chemistry and Physics 1999-2000: A
Ready-Reference Book of Chemical and Physical Data, 79th ed.; Lide, D.
R., Ed.; CRC Press: Boca Raton, Florida, 1998.
cm , respectively. A similar broadening has been observed in
the infrared spectra of the bridging gallium hydrides on GaAs
18,19,32
(34) Swaminathan, V.; Macrander, A. T. Material Aspects of GaAs and InP
Based Structures; Prentice Hall: Englewood Cliffs, NJ, 1991.
(001) and in condensed (GaH3)n oligomers.
This phe-
nomenon may be attributed to subtle variations in the local
chemical environment of the group IIIA elements. On the InP
(35) The dimerization energy of (PH ) In(µ-H) In(PH ) is calculated relative
2
2
2
2 2
to the energy of (PH
2 2 2 2
) InH according to the following reaction: 2(PH ) -
2 2 2
InH f (PH In(µ-H) In(PH ) .
2
)
2
(
36) The P-H, In-H and In-In bond energies are assumed to equal 76, 58
and 24 kcal/mol, respectively (Ref. 34). The former value was estimated
from the heat of formation of phosphine, whereas the latter two values
were taken from the single bond energies listed in ref 1, p 2.
(
32) Herzberg, G. Molecular Spectra and Molecular Structure, Infrared and
Raman Spectra of Polyatomic Molecules; Van Nostrand Reinhold: New
York, 1945; Vol. 2, p 168.
J. AM. CHEM. SOC.
9
VOL. 124, NO. 50, 2002 15123

A R T I C L E S
Raghavachari et al.
In bond formed by hydrogen adsorption on the δ(2 × 4)
reconstruction makes the bridging bond somewhat weaker than
in diindane. In the former case, the indium atoms are pulled
apart by their back-bonds to phosphorus. Examination of Tables
ing the reactivity of atomic hydrogen (and other ligands) toward
the electron-deficient indium atoms. Terminal and bridging
hydrides are formed at room temperature, with vibrational
frequencies occurring at 1660-1682 and 1350-1150 cm ,
respectively. The 3c-2e bonds are actually weaker on the surface
than in the gas phase, owing to the strained back-bonds between
the indium dimers and the underlying phosphorus atoms.
Nevertheless, we may now add indium to the list of group IIIA
elements that are known to form covalent bridging hydride
bonds.
-
1
1
and 3 reveals that the In-In bond distances and In-H-In
bond angles are 3.0 Å and 100° in In2H6, compared to 3.8 Å
and ∼160° in cluster 3. Finally, it is interesting to note that the
vibrational frequencies of the terminal indium hydrides on H:InP
(001) are significantly lower than those of InH3.
VI. Conclusions
This work demonstrates that the δ(2 × 4) reconstruction of
Acknowledgment. Funding for this research was provided
by the National Science Foundation, Divisions of Chemical and
Transport Systems and Materials Research.
indium phosphide provides a unique environment for investigat-
2
98
1
298
rxn
298
(
37) Here, ∆E
) /
2
∆E + ∆E
, where the second term equals the
In-H
In-H-In
dimerization energy, 22 kcal/mol, and the last term is 58 kcal/mol (ref 1,
p 12).
JA020348P
15124 J. AM. CHEM. SOC.
9
VOL. 124, NO. 50, 2002