Study of heteroepitaxy of InP on GaAs by metalorganic vapor-phase epitaxy

Article abstract of DOI:10.1149/1.2096270

The epitaxial layers of InP were grown on a GaAs substrate by atmospheric pressure metalorganic vapor-phase epitaxy. By employing a two-step growth procedure, an epitaxial layer with a specular surface and good crystalline quality could be obtained when a thin buffer layer (approximately 200 A) was deposited at low temperature (400°C) prior to the epitaxial growth. On the other hand, in the case of direct growth, a growth layer had a rough surface and poor crystalline quality, presumably due to island-like growth and/or reaction of PH₃ gas with GaAs in the early stage of epitaxy.

Full text of DOI:10.1149/1.2096270

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).