ISSN 1070-3632, Russian Journal of General Chemistry, 2009, Vol. 79, No. 2, pp. 184–185. © Pleiades Publishing, Ltd., 2009.
Original Russian Text © R.G. Mirskov, V.I. Rakhlin, S.N. Adamovich, M.G. Voronkov, 2009, published in Zhurnal Obshchei Khimii, 2009, Vol. 79, No. 2,
pp. 196–197.
Plasmochemical Synthesis of Thin Layers
of the Sulfur Doped Silicon Dioxide
R. G. Mirskov, V. I. Rakhlin, S. N. Adamovich, and M. G. Voronkov
Favorskii Irkutsk Institute of Chemistry, Siberian Branch, Russian Academy of Sciences,
ul. Favorskogo 1, Irkutsk, 664033 Russia
e-mail: mir@irioch.irk.ru
Received June 17, 2008
Abstract―Plasmochemical synthesis of thin layers of the sulfur atoms doped SiO
organoelement compounds containing the Si–S fragments was studied. Highly pure trimethyl-ethylthiosilane
Me SiSEt was used as a precursor for deposition of the sulfur-silicate glass. SiO layers with designated
2
on the basis of volatile Si-
3
2
composition and properties required for construction of modern microelectronic devices were obtained.
DOI: 10.1134/S1070363209020029
Earlier we have proposed highly pure silicon-
organoelement precursors containing Si–O–M (M = C,
Si, B, P, Sb), Si–N and Si–N–C fragments [1] for the
processes of plasmochemical deposition of nano-
dimensional layers of silicon dioxide as well as layers
of silicon dioxide, nitride and carbonitride doped with
atoms of М. They are widely used in the technology of
designing of modern micro- and optoelectronic
devices. In the present work we have studied plasmo-
chemical synthesis of thin layers of the sulfur atoms
3 3 3 3
Me SiHal + Et SnSEt → Me SiSEt + Et SnHal,
II
I, 95%
Hal = Cl, Br, I.
The starting II was prepared in up to 96% yield by
the earlier elaborated by us method based on the reac-
tion of O,S-ethyl esters of thiocarboxylic acids, S,S-
diethyl esters of monothiocarbonic acid, ethyl esters of
dithiocarboxylic, dithiocarbonic and dithiocarbamic
acids or S-ethyl isothiuronium chloride with tri-
ethylalkoxystannanes or hexaethyldistannoxanes [3, 4].
doped SiO on the basis of volatile silicon-organo-
2
element compounds containing the Si–S groups.
Partial replacement of oxygen atoms by sulfur atoms in
the dielectric layers of silicon dioxide deposited on the
surface of semiconducting materials should, in our
opinion, result in notable variation of their electro-
physical parameters. As a precursor for deposition of
the sulfur-silicate glass highly pure trimethylethylthio-
Thin layers (0.1–1.0 μm) of silicon dioxide doped
with sulfur atoms were deposited on the surface of the
plates of semiconductor silicon by decomposition of
vapor-gas mixture (VGM) consisting of I and oxygen
in the plasma of high-frequency electric discharge. The
conditions of deposition and some electrophysical
properties of the layers obtained are presented in the
table.
silane Me SiSEt (I) was used.
3
The reaction of trialkylsilyl halides with alkane-
thiols in the presence of hydrogen halide acceptors is
known to be a general method for preparation of
trimethylalkylthiosilanes [2]. However, the use of
stinky, highly toxic and expensive alkanethiols
represents a substantial complication for practical
realization of this method. Therefore, the synthesis of I
was performed by the reaction of trimethylsilyl halides
with triethylethylthiostannane II by the following
scheme:
As follows from these data, the content of the sulfur
atoms in the silicon dioxide obtained varies from 0.1 to
1
.89 at% depending on the percentage of I in the initial
VGM. The refraction index and dielectric constant are
also determined by the content of I in VGM and
increase with increasing content of I from 1.47 to 1.52
and from 4.59 to 5.00, respectively.
Therefore, thin layers of SiO doped with sulfur
2
atoms with designated composition and electrophysical
184
Mirskov
