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New Journal of Chemistry
DOI: 10.1039/D0NJ03290E
electronic applications.
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Electronic supplementary material
man and Q. Liu, The Journal of Chemical Physics, 2001, 114,
1797–1802.
The 3D crystal structure of CdS is shown as Fig. S1 whereas
the average roughness profile of the PFT/CdS composite is rep-
resented in Fig. S2. The thickness profilometric image of the
ITO-PFTDLC/CdS-Au heterojunction is depicted in Fig. S3 and
X-ray indexing data of the PFT DLC and PFT/CdS composite are
tabulated in Table S1; whereas, transit times at different temper-
atures are presented in Table S2. A description of the methods to
calculate the hole mobility is also presented.
17 M. Funahashi, F. Zhang, N. Tamaoki and J.-i. Hanna,
ChemPhysChem, 2008, 9, 1465–1473.
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Conflicts of interest
“There are no conflicts to declare”.
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Acknowledgements
22 I.-H. Choi and P. Y. Yu, physica status solidi (b), 2005, 242,
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DPS sincerely thanks to the UDSMM, ULCO for financial assis-
tance. Prof. A. Hadj Sahraoui, the Director of UDSMM is grate-
fully acknowledged for his kind support and encouragement. We
sincerely thanks to Mr. Parthiban Palani for his help in the XRD
calculations.
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