Full text of DOI:10.1063/1.102033

Organometallic vapor phase epitaxial growth and characterization of InAsBi and
InAsSbBi
K. Y. Ma, Z. M. Fang, D. H. Jaw, R. M. Cohen, G. B. Stringfellow, W. P. Kosar, and D. W. Brown
Citation: Applied Physics Letters 55, 2420 (1989); doi: 10.1063/1.102033
View online: http://dx.doi.org/10.1063/1.102033
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/55/23?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
InAsSbBi alloys grown by organometallic vaporphase epitaxy
J. Appl. Phys. 75, 2857 (1994); 10.1063/1.356179
Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275°C
J. Appl. Phys. 70, 3940 (1991); 10.1063/1.349204
Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy
J. Appl. Phys. 68, 1187 (1990); 10.1063/1.346715
Metalorganic chemical vapor deposition and characterization of the InAsSbBi material system for infrared
detection
Appl. Phys. Lett. 53, 142 (1988); 10.1063/1.100350
Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP
Appl. Phys. Lett. 46, 89 (1985); 10.1063/1.95808
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
141.210.2.78 On: Wed, 26 Nov 2014 05:26:25

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.210.2.78 On: Wed, 26 Nov 2014 05:26:25
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.210.2.78 On: Wed, 26 Nov 2014 05:26:25
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.210.2.78 On: Wed, 26 Nov 2014 05:26:25
1