case, on-chip FT-IR detection was achieved by deep reactive ion
etching to form a thin transmission cell within a Si substrate,14
but this approach does not provide the surface sensitivity required
for sensor-type applications in which solution- or gas-phase
analytes react with a substrate-bound reagent. The ideal optical
configuration to combine solution-phase and surface sensitivity
is multiple internal reflection (MIR) FT-IR, which samples both
the substrate surface and any solution in contact with it via IR
light propagated from inside the substrate.
detection, as described briefly in a preliminary publication.22 We
demonstrate the utility of this approach both for analysis of
solution-phase reactions and for detection of the reaction of a
solution-phase analyte with a surface-bound functional group in
situ, the first example of an on-chip FT-IR detection scheme suited
to both of these general applications.
EXPERIMENTAL SECTION
Microreactor Fabrication. Microreactors were fabricated by
anodically bonding MIR crystals produced on silicon wafers and
fluidic channels created in Pyrex glass wafers. Figure 1a shows a
schematic of the fabrication sequence for these devices. To
produce suitably polished optical surfaces by anisotropic etching
of Si, alignment of a mask to the wafer flat is not sufficient. We
therefore used a two-step method described by Ensell21 for
improving alignment. This technique is based on the formation
of square pyramidal etch pits during potassium hydroxide (KOH)
etching of Si(100); these features form with their square cross
sections aligned to the 〈110〉 axes that the wafer flat(s) ap-
proximate. Production of two series of test pits on opposite sides
of one wafer face allows identification of an exact 〈110〉 axis by
connecting the “best-aligned” pits on either side of the wafer. The
reader is referred to ref 21 for a detailed explanation of this
method, summarized as follows.
Silicon (Si) is a natural choice for the fabrication of microre-
actor substrates15 and a material that is compatible with MIR-FT-
IR, albeit subject to the limitations outlined below. The central
role of Si in microelectronics and in microelectromechanical
systems (MEMS) means that methods for processing it are well-
developed, including parallel processing techniques to enable the
fabrication of many microreactor devices on a single silicon wafer.
The use of silicon microfabrication techniques also offers the
possibility of producing structures with fully integrated electrical
circuits. Furthermore, surface chemistry for well-defined func-
tionalization of Si surfaces is also well-established, making Si
substrates an ideal choice for sensor-type applications.
Although the use of MIR-FT-IR with Si substrates is a common
technique for increasing sensitivity to Si surface species,16 silicon
has not found widespread use as a more universal MIR substrate,
A layer of low-pressure chemical vapor deposition (LPCVD)
silicon nitride (∼1 to 2 µm) was first deposited onto the Si wafer
because multiphonon bands effectively absorb all the incident IR
radiation below 1500 cm-1. However, it was recently shown that
(
FZ Si(100), 1901-3680 Ω cm, double-side-polished, ∼500 µm
shortening the length of the Si substrate parallel to the incident
IR beam can extend the frequency cutoff well below 1000 cm-
1 17
thick). A first mask with a series of alignment marks (Figure 1b)
was used to pattern a layer of photoresist (OCG-825, OCG
Microelectronic Materials, Inc.); these alignment marks consisted
of two sets of 41 circles (71 µm diameter). Each circle was created
with its center along an arc of radius 45 mm, and the circles in
each set were arranged relative to one another with an angle of
,
providing access to a large portion of the so-called IR “fingerprint”
region, even in studies of the Si/ liquid interface.18,19 The remaining
obstacle to incorporating Si MIR substrates into µTAS is the
economical fabrication of these substrates, since MIR crystals are
traditionally produced by individually polishing the substrates,
which makes them both expensive to manufacture and difficult
to integrate with other microreactor features. Anisotropic etching
of silicon has been used to create beveled Si surfaces that are
suitably polished for use in optical systems,20,21 providing the
potential for parallel production of multiple Si crystals for MIR-
FT-IR applications.
0
.1° between then. The two sets of marks were positioned on
opposite sides of the wafer and were a mirror image of one
another. This pattern was transferred into the nitride using reactive
ion etching, and the layer of photoresist was removed using
acetone.
To create the test etch pits, the wafer was blown dry, and
the exposed Si was etched for ∼30 min in a 20% KOH bath at
In the present work, we incorporate anisotropic etching into
the parallel fabrication of Si-based microreactors with MIR-FT-IR
∼
80 °C. Although the origin of this etchant anisotropy is very
complicated,23 it is well-known that aqueous bases etch Si(111)
faces much more slowly than other faces. In the case of KOH
etching of Si(100), if an etch mask exposes a square of silicon
whose sides align perfectly to the 〈110〉 axes, the result is a square
pyramidal pit with the faces of the pit defined by {111} planes. In
our case, where the etch mask exposes a circular area of silicon,
the KOH bath will still create the same axis-aligned etch pit, in
this case with its size determined by the diameter of the circle.24
While the circular openings in the nitride layer are evenly
displaced relative to one another, the relative displacements of
the KOH-etched test pits depend on their alignment to the 〈110〉
(
(
10) Kolhed, M.; Lendl, B.; Karlberg, B. Analyst, 128, 2-6.
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12) Lendl, B.; Schindler, R.; Frank, J.; Kellner, R.; Drott, J.; Laurell, T. Anal.
Chem. 1 9 9 7 , 69, 2877-2881.
(
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13) Kellner, R.; Lendl, B. Anal. Methods Instrum. 1 9 9 5 , 2, 52-54.
14) Jackman, R. J.; Floyd, T. M.; Schmidt, M. A.; Jensen, K. F. In Proceedings of
Micro Total Analysis Systems 2000; Kluwer Academic Publishers: Dordrecht,
The Netherlands, 2000; pp 155-158.
(
15) Reyes, D. R.; Iossifidis, D.; Auroux, P.-A.; Manz, A. Anal. Chem. 2 0 0 2 , 74,
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623-2636.
(
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16) Chabal, Y. J. Surf. Sci. Rep. 1 9 8 8 , 8, 211-357.
17) Weldon, M. K.; Stefanov, B. B.; Raghavachari, K.; Chabal, Y. J. Phys. Rev.
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(
(
18) Queeney, K. T.; Fukidome, H.; Chaban, E. E.; Chabal, Y. J. J. Phys. Chem.
(22) Jackman, R. J.; Queeney, K. T.; Herzig-Marx, R.; Schmidt, M. A.; Jensen,
K. F. In Proceedings of Micro Total Analysis Systems 2001; Kluwer Academic
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(23) Wind, R. A.; Jones, H.; Little, M. J.; Hines, M. A. J. Phys. Chem. B 2 0 0 2 ,
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K.; Weldon, M. K.; Chaban, E. E.; Christman, S. B.; Kobayashi, H.; Chabal,
Y. J. Surf. Sci. 2 0 0 2 , 502-503, 498-502.
(
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20) Klumpp, A.; Kuehl, K.; Schaber, U.; Kaeufl, H. U.; Lang, W. Sens. Actuators,
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(24) In reality, underetching creates a square slightly larger than the circular
opening; for simplicity, we have shown in Figure 1 the ideal case of a square
circumscribed by the circular opening in the etch mask.
Analytical Chemistry, Vol. 76, No. 21, November 1, 2004 6477