Journal of Inorganic and General Chemistry
www.zaac.wiley-vch.de
ARTICLE
Zeitschrift für anorganische und allgemeine Chemie
Chakraborty, B. Ray, R. Bhattacharya, A. K. Dutta, J. Phys.
1002; b) L. V. Yashina, J. Sánchez-Barriga, M. R. Scholz, A. A.
Chem. Solids 1980, 41, 913–917.
11] D. Choi, Y. Jang, J. Lee, G. H. Jeong, D. Whang, S. W. Hwang,
K.-S. Cho, S.-W. Kim, Sci. Rep. 2014, 51, 6714/1–7.
12] a) Y. Liang, Y. Wang, J. Wang, S. I. Wu, D. Jiang, J. Lian, RSC
Adv. 2016, 6, 11501–11506; b) R. Jin, G. Chen, C. Yan, D. Chen,
H. Xu, J. Pei, CrystEngComm 2012, 14, 8547–8553; c) L. Guo,
G. B. Ji, X. F. Chang, M. B. Zheng, Y. Shi, Y. D. Zheng, Nano-
technology 2010, 21, 035606; d) Y. Chen, B. Deng, G. B. Cai,
Volykhov, A. P. Sirotina, V. S. Neudachina, M. E. Tamm, A. Vary-
khalov, ACS Nano 2013, 7, 5181–5191; c) H. Bando, K. Koizumi,
Y. Oikawa, K. Daikohara, V. A. Kulbachinskii, H. Ozaki, J. Phys.
Condens. Matter 2000, 12, 5607–5616.
[
[
[26] S. Nakajima, J. Phys. Chem. Solids 1963, 24, 479–485.
[27] a) K. Kadel, L. Kumari, W. Li, J. Y. Huang, P. P. Provencio, Nano-
scale Res. Lett. 2016, 6, 57; b) R. Harpness, A. Gedanken, New
J. Chem. 2003, 27, 1191–1193.
T. K. Zhang, W. F. Dong, W. X. Zhang, A. W. Xu, J. Phys. Chem. [28] S. A. Semiletov, Z. G. Pinsker, Dokl. Akad. Nauk SSSR 1955, 100,
C 2008, 112, 672–679. 1079–1082.
13] Y.-Q. Liu, M. Zhang, F.-X. Wang, G.-B. Pan, J. Mater. Chem. C [29] a) K. Kadel, L. Kumari, W. Li, J. Y. Huang, P. P. Provencio, Nano-
[
[
[
[
2
014, 2, 240–244.
scale Res. Lett. 2011, 6, 57/1–7; b) G. Zhang, W. Wang, X. Lu,
X. Li, Cryst. Growth Des. 2009, 9, 143–150; c) R. Y. Wang, J. P.
Feser, X. Gu, K. M. Yu, R. A. Segalman, A. Majumdar, D. J. Mi-
liron, J. J. Urban, Chem. Mater. 2010, 22, 1943–1945; d) H. Cui,
H. Liu, X. Li, J. Wang, F. Han, X. Zhang, R. I. Boughton, J. Solid
State Chem. 2004, 177, 4001–4006.
14] R. J. Mehta, C. Karthik, W. Jiang, B. Singh, Y. Shi, R. W. Siegel,
T. Borca-Tasciuc, G. Ramanath, Nano Lett. 2010, 10, 4417–4422.
15] G. Chen, W. Wang, C. Wang, T. Ding, Q. Yang, Adv. Sci. 2015,
2
, 1500109.
16] a) J. Buha, R. Gaspari, A. E. Del Rio Castillo, F. Bonaccorso, L.
Manna, Nano Lett. 2016, 16, 4217–4223; b) M. Hong, Z.-G.
Chen, L. Yang, G. Han, J. Zou, Adv. Electron Mater. 2015, 1,
[30] a) F. Wei, Z. Deng, S. Sun, F. Xie, G. Kieslich, D. M. Evans,
M. A. Carpenter, P. D. Bristowe, A. K. Cheetham, Mater. Hori-
zon. 2016, 3, 328–332; b) N. Elfaleh, H. Chouaib, S. Kamoun,
Acta Crystallogr., Sect. E 2013, 69, m666; c) A. S. Rao, U. Ba-
ruah, S. K. Das, Inorg. Chim. Acta 2011, 372, 206–212; d) B.
Zarychta, M. Bujak, J. Zaleski, Z. Naturforsch. B 2004, 59, 1029–
1034.
1
500025/1–9; c) A. Zhuang, J.-J. Li, Y.-C. Wang, X. Wen, Y. Lin,
B. Xiang, X. Wang, J. Zeng, Angew. Chem. 2014, 126, 6543–
547; Angew. Chem. Int. Ed. 2014, 53, 6425–6429; d) Z. Lin, Y.
6
Chen, A. Yin, Q. He, X. Huang, Y. Xu, Y. Liu, X. Zhong, Y.
Huang, X. Duan, Nano Lett. 2014, 14, 6547–6553; e) H. Xu, G.
Chen, R. Jin, D. Chen, Y. Wang, J. Pei, Y. Zhang, C. Yan, Z. Qiu,
CrystEngComm 2014, 16, 3965–3970; f) Y. Min, G. D. Moon,
B. S. Kim, B. Lim, J.-S. Kim, C. Y. Kang, U. Jeong, J. Am. Chem.
Soc. 2012, 134, 2872–2875.
[
31] Cambridge Structural Database, Version 5.37, see also: F. H.
Allen, Acta Crystallogr., Sect. B 2002, 58, 380–388. Analysis
based on 44 hits including a BiCl with co-ordination number of
6
Cl set to 1. The opposing bond lengths were isolated by constrain-
ing the angle at Bi to be Ͻ150°.
[
[
17] a) G. Bendt, J. Sonntag, A. Lorke, W. Assenmacher, U. Hage-
mann, S. Schulz, Semicond. Sci. Technol. 2015, 30, 085021/1–7;
b) G. Bendt, S. Schulz, S. Zastrow, K. Nielsch, Chem. Vap. Depo-
sition 2013, 19, 235–241.
18] a) C. Bae, T. Böhnert, J. Gooth, L. Seulky, S. Lee, H. Kim, S.
Heimann, S. Schulz, H. Shin, K. Nielsch, Semicond. Sci. Technol.
[
[
[
32] A. Guy Orpen, M. J. Quayle, J. Chem. Soc., Dalton Trans. 2001,
1601–1610.
33] a) L. E. Orgel, J. Chem. Soc. 1959, 3815–3819; b) R. A. Wheeler,
P. N. V. P. Kumar, J. Am. Chem. Soc. 1992, 114, 4776.
34] a) S. Pohl, R. Lotz, W. Saak, D. Haase, Angew. Chem. 1989, 101,
3
55–357; Angew. Chem. Int. Ed. Engl. 1989, 28, 344–345; b) C.
Vitzthumecker, A. Pfitzner, Z. Anorg. Allg. Chem. 2014, 640,
366.
2
014, 29, 064003/1–7; b) S. Zastrow, J. Gooth, T. Böhnert, S.
Heiderich, W. Töllner, S. Heimann, S. Schulz, K. Nielsch,
Semicond. Sci. Technol. 2013, 28, 035010/1–6.
2
[
[
35] R. Caracas, X. Gonze, Phys. Chem. Minerals 2005, 32, 295–300.
36] a) G. Chen, J. Zhou, J. Zuo, Q. Yang, Appl. Mater. Interfaces
[
19] a) M. Rusek, G. Bendt, C. Wölper, S. Schulz, Eur. J. Inorg. Chem.
2
016, 3673–3679; b) S. Heimann, W. Assenmacher, O. Prymak,
2
016, 8, 2819–2825; b) C. D. Wagner, A. V. Naumkin, A. Kraut-
S. Schulz, Eur. J. Inorg. Chem. 2015, 14, 2407–2415; c) G. Bendt,
A. Weber, S. Heimann, W. Assenmacher, O. Prymak, S. Schulz,
Dalton Trans. 2015, 44, 14272–14280; d) S. Schulz, S. Heimann,
J. Friedrich, M. Engenhorst, G. Schierning, W. Assenmacher,
Chem. Mater. 2012, 24, 2228–2234.
Vass, J. W. Allison, C. J. Powell, J. R. Rumble Jr., NIST
Standard Reference Database 20, Version 3.4. (web version)
(
http:/srdata.nist.gov/xps/).
37] a) Z. Deng, M. Mansuripur, A. J. Muscat, Nano Lett. 2009, 9,
015–2020; b) W. Tao, J. Wang, D. Wu, J. Chang, F. Wang, Z.
[
[
2
[
20] S. Heimann, S. Schulz, J. Schaumann, A. Mudring, J. Stölzel, F.
Maculewicz, G. Schierning, J. Mater. Chem. C 2015, 3, 10375–
Gao, F. Xu, K. Jiang, Dalton Trans. 2013, 42, 11411–11417; c)
H. Zhang, M. Ge, L. Yang, Z. Zhou, W. Chen, Q. Li, L. Liu, J.
Phys. Chem. C 2013, 117, 10285–10290.
1
0380.
[
[
21] M. Loor, G. Bendt, C. Wölper, W. Assenmacher, S. Schulz, Dal-
ton Trans. 2016, 45, 15326–15335.
22] S. Schulz, S. Heimann, K. Kaiser, O. Prymak, W. Assenmacher,
J. T. Brüggemann, B. Mallik, A.-V. Mudring, Inorg. Chem. 2013,
38] ICSD651518: O. M. Aliev, E. V. Magerramov, P. G. Rustamov,
Russ. J. Inorg. Chem. (Z. Neorgan. Khimii) 1977, 22, 1539–1541.
39] M. R. Detty, M. D. Seidler, J. Org. Chem. 1982, 47, 1354–1356.
40] G. M. Sheldrick, Acta Crystallogr., Sect. A 1990, 46, 467–473.
41] a) G. M. Sheldrick, SHELXL-2014, Program for the Refinement
of Crystal Structures University of Göttingen, Göttingen, Ger-
many 2014; see also: G. M. Sheldrick, Acta Crystallogr., Sect. A
2008, 64, 112–122. shelXle, A Qt GUI for SHELXL: b) C. B.
Hübschle, G. M. Sheldrick, B. Dittrich, J. Appl. Crystallogr. 2011,
44, 1281–1284.
[
[
[
5
2, 14326–14333.
[
23] a) A. J. Green, S. Dey, Y. Q. An, B. O’Brien, S. J. O’Mullane, B.
Thiel, A. C. Diebold, arXiv:1601.04057v1 [cond-mat.mtrl-sci]; b)
C. D. Wagner, A. V. Naumkin, A. Kraut-Vass, J. W. Allison, C. J.
Powell, J. R. Rumble Jr., NIST Standard Reference Database 20,
Version 3.4. (web version) (http:/srdata.nist.gov/xps/).
[24] C. R. Thomas, M. K. Vallon, M. G. Frith, H. Sezen, S. K. Kush-
waha, R. J. Cava, J. Schwartz, S. L. Bernasek, Chem. Mater.
[42] P. Scherrer, Nachr. Ges. Wiss. Gött. Math.-Phys. Kl. 1918, 2, 98–
100.
2
016, 28, 35–39.
[
25] a) C. R. Thomas, G. Sahasrabudhe, S. K. Kushwaha, J. Xiong,
Received: September 9, 2016
R. J. Cava, J. Schwartz, Phys. Status Solidi RRL 2014, 8, 997–
Published Online:
Z. Anorg. Allg. Chem. 0000, 0–0
9
© 0000 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim