ARTICLE IN PRESS
D.C. Leitao et al. / Journal of Magnetism and Magnetic Materials 322 (2010) 1319–1322
1321
U0 ’ 83 000 K, while for Ni, U0 ’ 25 000 K, both with acceptable
correlation factors. Considering the calculated effective anisotro-
3
3
py, and from Eq. (3) we obtain Veff ’ ð20 nmÞ and Veff ’ ð26 nmÞ
for Ni80Fe20 and Ni, respectively. We thus conclude that the
experimental Veff is smaller than the expected volume for a Neel
ꢁ
1
ꢁ
180 DW nucleation (ꢀ2 V180 DW), but is ꢀ100 times smaller than
the wire volume. These differences are attributed to imperfections
and inhomogeneities along the nanowire, but mainly to geome-
trical features at the ends that lead to spin canting, reducing the
magnetostatic energy needed to nucleate a domain wall. Micro-
magnetic calculations in finite length wires have also demon-
strated the influence of the ends in lowering the energy for
domain nucleation [20]. In fact, previous works showed that the
magnetization reversal can start in small regions of the wires,
typically ꢀ 2 orders of magnitude smaller than the wire length
[5,7,18,21], which is agreement with this work.
4. Conclusions
Fig. 2. Temperature dependence of Hc for Ni80Fe20 (triangles) and Ni (squares)
nanowires. Full lines show the best fit of Eq. (2) with
data.
a ¼ 1:5 to the experimental
In this work we performed magnetization measurements as a
function of temperature for Ni and Ni80Fe20 electrodeposited
nanowire arrays. The Ni80Fe20 nanowire sample showed the
expected longitudinal anisotropic behavior characteristic of a
single domain nanowire. On the other hand, Ni nanowires exhibit
an almost isotropic behavior with easy and hard axis Hc smaller
than those found in the literature. EDS characterization revealed
an inclusion of Cu, which leads to a decrease of the magnetostatic
interactions, thus lowering the effective anisotropy present in this
sample. The temperature dependence of Hc was also studied in
order to gain some insight into the magnetization reversal
mechanisms of these arrays of nanowires. We were able to
conclude that it deviates from the simple prediction for infinite
cylinders of coherent rotation and curling. Instead, the reversal
description of the application of the model can be found in Ref.
[5]. However, in a simple explanation, the thermally excited
magnetization reversal follows an Arrhenius law, setting the
critical barrier height U0 as
U0 ¼ kBT lnðG0tcÞ.
U0 may depend on the temperature by magnetoelastic effects, but
as we have stated before this is not significant in the present work.
We thus obtain for the temperature dependence of Hc [18]:
(1)
ꢀ
ꢁ
1=a
Hc
kBT lnðG0tcÞ
¼ 1 ꢄ
,
(2)
Hc0
U0
where Hc0 is the coercive field at 0 K, kB is the Boltzmann constant,
T is the temperature, G0 is the attempt frequency (G0ꢀ109 Hz), tc
takes place via domain nucleation triggered by
a thermal
activated process. We also conclude that due to the presence of
imperfections along and at the ends of the nanowires the volume
for reversal nucleation is smaller than the expected for a 180ꢁ
domain wall nucleation and much smaller (ꢀ 2 orders of
magnitude) than the wire volume.
is the measurement time (tcꢀ100 s) and the exponent
a
depends
¼ 2 for coherent
¼ 1:5 for domain wall
on the reversal processes presented
magnetization reversal processes;
(a
a
nucleation). This concept of magnetization reversal triggered by
a thermal activated process gives rise to a volume (Veff ) where the
reversed domain starts to nucleate [18]:
Veff ¼ U0kB=Keff
.
(3)
Acknowledgments
Next we argue about the applicability of this model to our
Work supported in part by projects FEDER/POCTI/n2-155/94.
D.C. Leitao and C.T. Sousa are thankful to FCT for doctoral Grants
SFRH/BD/25536/2005 and SFRH/BD/38290/2007. J.P. Araujo also
thanks the Fundacao Gulbenkian for its financial support within
the ‘‘Programa Gulbenkian de Estimulo a Investigacao Cientifica’’.
experimental results of HcðTÞ. First, we performed the fitting of
Eq. (2) with parameter
coherent rotation processes. Since this is a delocalized reversal
mode, meaning that the reversal takes place all over the sample,
a ¼ 2 (not shown) which holds for
the effective volume ðVeff
Þ
is equal to the wire volume
3
[Vwire ꢃ ð108 nmÞ ]. However, the Veff values obtained from the
fits were much smaller than the wire volumes. In fact, the
theoretically predicted delocalized coherent rotation or curling
modes [19] fail in the case of real nanowires mainly due to their
finite dimensions, existence of imperfections and interactions
among nanowires [7].
References
[1] F. Casanova, C.E. Chiang, C.P. Li, I.V. Roshchin, A.M. Ruminski, M.J. Sailor,
I.K. Schuller, Nanotechnology 19 (2008) 31.
[2] Z.L. Xiao, C.Y. Han, U. Welp, H.H. Wang, V.K. Vlasko-Vlasov, W.K. Kwok, D.J.
Miller, J.M. Hiller, R.E. Cook, G.A. Willing, G.W. Crabtree, Appl. Phys. Lett. 81
(2002) 15.
[3] H. Masuda, H. Asoh, M. Watanabe, K. Nishio, M. Nakao, T. Tamamura, Adv.
Mater. 13 (2001) 3.
[4] D. Navas, M. Hernandez-Velez, M. Vazquez, W. Lee, K. Nielsch, Appl. Phys. Lett.
90 (2007) 19.
[5] P.M. Paulus, F. Luis, M. Kroll, G. Schmid, L.J. de Jongh, J. Magn. Magn. Mater.
224 (2001) 2.
[6] R. Skomski, H. Zeng, M. Zheng, D.J. Sellmyer, Phys. Rev. B 62 (2000) 6.
[7] D.J. Sellmyer, M. Zheng, R. Skomski, J. Phys. Condens. Matter 13 (2001) 25.
[8] K. Nielsch, R.B. Wehrspohn, J. Barthel, J. Kirschner, U. Gosele, S.F. Fischer, H.
Kronmuller, Appl. Phys. Lett. 79 (2001) 9.
Instead, we conclude that inhomogeneous localized modes
occur. Although usually energetically unfavorable in perfect
nanowires, structural inhomogeneities and geometrical features
at the ends lead to a local energy decrease, favoring these reversal
processes [7,6,19]. In Fig. 2 the full lines represent the fit of HcðTÞ
to Eq. (2) using as a fitting parameter U0 and
a ¼ 1:5 for DW
nucleation processes. For this case, the expected effective volume
of nucleation should correspond to the nucleation of a 180ꢁ DW
3
that accordingly to Ref. [5] is about ð35 nmÞ for Ni80Fe20 and
[9] M. Vazquez, K. Pirota, M. Hernandez-Velez, V.M. Prida, D. Navas, R. Sanz,
F. Batallan, J. Velazquez, J. Appl. Phys. 95 (2004) 11.
3
ð40 nmÞ for Ni. For Ni80Fe20 we have obtained an energy barrier of