Si-C-O system

Article abstract of DOI:10.1007/BF01352224

In a reactor where the pressure is held constant by expulsion of the gas produced by the reactions, the evolution of the Si-C-O system with temperature occurs in several steps, although the main transformations happen at the univariant points shown in an PRT diagram (pressure, P_CO/Pi_SiO ratio, temperature). The path followed by the system depends on the ratio of reactants initially present in the reactor. When the gas is expelled, the theoretical SiC yield from a C+SiO₂ mixture is close to 100%. The Si yield remains low, although it increases rapidly with the imposed pressure. The gas must be circulated to obtain a higher yield.